公开(公告)号：US20210005255A1

公开(公告)日：2021-01-07

申请号：US16460995

申请日：2019-07-02

Applicant: Winbond Electronics Corp.

Inventor： He-Hsuan Chao ,  Ping-Kun Wang ,  Seow Fong Lim ,  Norio Hattori ,  Chien-Min Wu ,  Chih-Hua Hung

IPC: G11C13/00

Abstract: A resistive memory and a method for writing data thereof are provided. The method for writing data includes: receiving a write-in data and generating an inverted write-in data; reading a current data in a plurality of selected memory cells; comparing the current data with the write-in data and the inverted write-in data; selecting the write-in data or the inverted write-in data to generate a final data according to a comparison result; and writing the final data into the selected memory cells.

公开(公告)号：US10937495B2

公开(公告)日：2021-03-02

申请号：US16460995

申请日：2019-07-02

Applicant: Winbond Electronics Corp.

Inventor： He-Hsuan Chao ,  Ping-Kun Wang ,  Seow Fong Lim ,  Norio Hattori ,  Chien-Min Wu ,  Chih-Hua Hung

IPC: G11C11/00 ,  G11C13/00

Abstract: A resistive memory and a method for writing data thereof are provided. The method for writing data includes: receiving a write-in data and generating an inverted write-in data; reading a current data in a plurality of selected memory cells; comparing the current data with the write-in data and the inverted write-in data; selecting the write-in data or the inverted write-in data to generate a final data according to a comparison result; and writing the final data into the selected memory cells.