公开(公告)号：US09064774B2

公开(公告)日：2015-06-23

申请号：US13894681

申请日：2013-05-15

Applicant: Wisconsin Alumni Research Foundation

Inventor： Thomas F. Kuech ,  Kevin L. Schulte ,  Luke J. Mawst ,  Tae Wan Kim ,  Brian T. Zutter

IPC: H01L21/02 ,  H01L29/15

CPC classification number: H01L29/155 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02455 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02617 ,  H01L21/02664

Abstract: Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm).

Abstract translation: 提供了由氢化物气相外延制备的虚拟衬底，其包括半导体生长衬底和在生长衬底上包括一层或多层半导体合金的基本上应变松弛变质缓冲层（MBL）结构。 MBL结构被组成分级，使得其晶格常数从与生长衬底的界面处的晶格常数转变，其与生长衬底的晶格常数基本相同，在与界面相反的表面处的晶格常数不同 生长衬底的晶格常数。 虚拟衬底包括相对厚的MBL结构（例如>20μm）和相对厚的生长衬底（例如> 0.5mm）。

公开(公告)号：US20140339505A1

公开(公告)日：2014-11-20

申请号：US13894681

申请日：2013-05-15

Applicant: Wisconsin Alumni Research Foundation

Inventor： Thomas F. Kuech ,  Kevin L. Schulte ,  Luke J. Mawst ,  Tae Wan Kim ,  Brian T. Zutter

IPC: H01L29/15

CPC classification number: H01L29/155 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02455 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02617 ,  H01L21/02664

Abstract: Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm)

Abstract translation: 提供了由氢化物气相外延制备的虚拟衬底，其包括半导体生长衬底和在生长衬底上包括一层或多层半导体合金的基本上应变松弛变质缓冲层（MBL）结构。 MBL结构被组成分级，使得其晶格常数从与生长衬底的界面处的晶格常数转变，其与生长衬底的晶格常数基本相同，在与界面相反的表面处的晶格常数不同 生长衬底的晶格常数。 虚拟底物包括相对厚的MBL结构（例如>20μm）和相对厚的生长基底（例如> 0.5mm）