摘要:
The invention relates to a semiconductor body, which is composed of at least one semiconductor device, especially one impatt-diode, with integrated heat sink. The series of semiconductor layers, out of which the semiconductor device is produced, is made up of one first p.sup.+ -doped semiconductor layer, which has the function of an etching stop layer, of a contact layer and a buffer layer at the same time.
摘要:
A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.
摘要:
The invention concerns a lamp having a reflector, a glass lid and a filament which is supported by supply wires. The supply wires pass from the interior of the lamp to the outside through the connecting area between the reflector and the glass lid. The reflector is thus almost 100 percent effective because there is no space required for a material collection marking a passage of supply wires or a socket for receiving a bulb. The light performance of the lamp is thus an optimum.