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公开(公告)号：US20120276660A1
公开(公告)日：2012-11-01
申请号：US13548858
申请日：2012-07-13
IPC分类号： H01L21/66
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译： 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度 多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。
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公开(公告)号：US08249436B2
公开(公告)日：2012-08-21
申请号：US12434239
申请日：2009-05-01
IPC分类号： A21B2/00
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译： 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度 多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。
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公开(公告)号：US08724977B2
公开(公告)日：2014-05-13
申请号：US13548858
申请日：2012-07-13
IPC分类号： A21B2/00
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译： 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度 多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。
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4.发明授权公开(公告)号：US09018110B2
公开(公告)日：2015-04-28
申请号：US14112012
申请日：2012-03-29
IPC分类号： H01L23/66 , H01L21/263 , H01L21/324 , H01L21/67 , H05B6/70
CPC分类号： H01L21/263 , H01L21/324 , H01L21/67115 , H05B6/702 , H05B6/708
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.
摘要翻译： 提供了使用微波或毫米波能量的半导体衬底的辐射处理方法和装置。 微波或毫米波能量可以具有在约600MHz和约1THz之间的频率。 来自磁控管的交流电耦合到具有内部导体和外部导体的泄漏的微波发射器，该外部导体具有尺寸小于所发射的辐射的波长的开口。 内外导体由绝缘材料分开。 由微波发射产生的干扰模式可以通过相位调制发射器的功率和/或通过频率调制电源本身的频率而被均匀化。 来自单个发电机的功率可以由功率分配器划分为两个或更多个发射器。
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5.发明授权Method and system for deposition tuning in an epitaxial film growth apparatus 失效用于外延膜生长装置中沉积调谐的方法和系统公开(公告)号：US07195934B2
公开(公告)日：2007-03-27
申请号：US11178973
申请日：2005-07-11
申请人： Wolfgang R. Aderhold , Ali Zojaji
发明人： Wolfgang R. Aderhold , Ali Zojaji
CPC分类号： C23C16/52 , C30B23/02 , C30B25/02 , C30B25/165 , Y10T117/10
摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.
摘要翻译： 计算用于在衬底上沉积外延层的工艺参数的方法。 该方法包括以下步骤：测量工艺参数对外延层的厚度的影响，以确定工艺参数的增益曲线，以及使用增益曲线计算工艺参数的值以实现目标厚度 外延层。 计算该值以最小化与层中目标厚度的偏差。 而且，一种衬底处理系统，包括一个处理器，用于计算工艺参数的值，以在衬底上实现目标厚度的基本上均匀的外延层，其中使用从均匀度测量得到的增益曲线来计算该值 过程参数值的函数。
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6.发明授权公开(公告)号：US08939760B2
公开(公告)日：2015-01-27
申请号：US13370164
申请日：2012-02-09
IPC分类号： F27D15/02
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译： 本发明一般涉及在快速热处理期间冷却衬底的方法。 所述方法通常包括将基底定位在腔室中并向基底施加热量。 在将衬底的温度升高到所需温度之后，快速冷却衬底。 通过增加通过室的气体的流速来促进衬底的快速冷却。 通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。 冷却板通过由位于其间的气体促进的传导从衬底去除热量。 可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。 在衬底充分冷却之后，将衬底从腔室中取出。
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7.发明申请公开(公告)号：US20140038431A1
公开(公告)日：2014-02-06
申请号：US14112012
申请日：2012-03-29
IPC分类号： H01L21/263 , H05B6/70
CPC分类号： H01L21/263 , H01L21/324 , H01L21/67115 , H05B6/702 , H05B6/708
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.
摘要翻译： 提供了使用微波或毫米波能量的半导体衬底的辐射处理方法和装置。 微波或毫米波能量可以具有在约600MHz和约1THz之间的频率。 来自磁控管的交流电耦合到具有内部导体和外部导体的泄漏的微波发射器，该外部导体具有尺寸小于所发射的辐射的波长的开口。 内外导体由绝缘材料分开。 由微波发射产生的干扰模式可以通过相位调制发射器的功率和/或通过频率调制电源本身的频率而被均匀化。 来自单个发电机的功率可以由功率分配器划分为两个或更多个发射器。
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8.发明授权公开(公告)号：US07667162B2
公开(公告)日：2010-02-23
申请号：US11103968
申请日：2005-04-11
CPC分类号： H01L21/67248 , H01L21/67115
摘要： During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
摘要翻译： 在制造期间，根据热配方照射旋转的半导体衬底。 半导体衬底的温度测量结果与每个温度测量时的半导体衬底的位置一起获得。 然后确定半导体衬底的位置是否应过滤温度测量的至少一个特定温度测量。 如果是这样，则获得至少一个过滤的温度测量值。 随后基于温度测量，至少一个过滤温度测量和热配方控制半导体衬底的辐射。
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9.发明申请SPIKE ANNEAL RESIDENCE TIME REDUCTION IN RAPID THERMAL PROCESSING CHAMBERS 有权快速热处理炉中SPIKE ANNEAL RESIDENCE TIME减少公开(公告)号：US20130206362A1
公开(公告)日：2013-08-15
申请号：US13370164
申请日：2012-02-09
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译： 本发明一般涉及在快速热处理期间冷却衬底的方法。 所述方法通常包括将基底定位在腔室中并向基底施加热量。 在将衬底的温度升高到所需温度之后，快速冷却衬底。 通过增加通过室的气体的流速来促进衬底的快速冷却。 通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。 冷却板通过由位于其间的气体促进的传导从衬底去除热量。 可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。 在衬底充分冷却之后，将衬底从腔室中取出。
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公开(公告)号：US07778533B2
公开(公告)日：2010-08-17
申请号：US10243383
申请日：2002-09-12
CPC分类号： H01L21/67248 , H01L21/67115
摘要： During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
摘要翻译： 在制造期间，根据热配方照射旋转的半导体衬底。 半导体衬底的温度测量结果与每个温度测量时的半导体衬底的位置一起获得。 然后确定半导体衬底的位置是否应过滤温度测量的至少一个特定温度测量。 如果是这样，则获得至少一个过滤的温度测量值。 随后基于温度测量，至少一个过滤温度测量和热配方控制半导体衬底的辐射。
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