公开(公告)号：US20130206362A1

公开(公告)日：2013-08-15

申请号：US13370164

申请日：2012-02-09

申请人： Jiping Li ,  Blake Koelmel ,  Aaron Muir Hunter ,  Wolfgang R. Aderhold

发明人： Jiping Li ,  Blake Koelmel ,  Aaron Muir Hunter ,  Wolfgang R. Aderhold

IPC分类号： F25B29/00 ,  F27B5/14 ,  A21B2/00 ,  F28D15/00

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  H01L21/67115

摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.

摘要翻译： 本发明一般涉及在快速热处理期间冷却衬底的方法。 所述方法通常包括将基底定位在腔室中并向基底施加热量。 在将衬底的温度升高到所需温度之后，快速冷却衬底。 通过增加通过室的气体的流速来促进衬底的快速冷却。 通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。 冷却板通过由位于其间的气体促进的传导从衬底去除热量。 可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。 在衬底充分冷却之后，将衬底从腔室中取出。

公开(公告)号：US08939760B2

公开(公告)日：2015-01-27

申请号：US13370164

申请日：2012-02-09

申请人： Jiping Li ,  Blake Koelmel ,  Aaron Muir Hunter ,  Wolfgang R. Aderhold

发明人： Jiping Li ,  Blake Koelmel ,  Aaron Muir Hunter ,  Wolfgang R. Aderhold

IPC分类号： F27D15/02

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  H01L21/67115

摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.

摘要翻译： 本发明一般涉及在快速热处理期间冷却衬底的方法。 所述方法通常包括将基底定位在腔室中并向基底施加热量。 在将衬底的温度升高到所需温度之后，快速冷却衬底。 通过增加通过室的气体的流速来促进衬底的快速冷却。 通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。 冷却板通过由位于其间的气体促进的传导从衬底去除热量。 可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。 在衬底充分冷却之后，将衬底从腔室中取出。

公开(公告)号：US07804042B2

公开(公告)日：2010-09-28

申请号：US11764738

申请日：2007-06-18

申请人： Jiping Li ,  Bruce E. Adams ,  Timothy N. Thomas ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Rajesh S. Ramanujam

发明人： Jiping Li ,  Bruce E. Adams ,  Timothy N. Thomas ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Rajesh S. Ramanujam

IPC分类号： B23K26/00

CPC分类号： B23K26/0665 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/18 ,  B23K2101/40

摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.

摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。

公开(公告)号：US20080308534A1

公开(公告)日：2008-12-18

申请号：US11764738

申请日：2007-06-18

申请人： Jiping Li ,  Bruce E. Adams ,  Timothy N. Thomas ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Rajesh S. Ramanujam

发明人： Jiping Li ,  Bruce E. Adams ,  Timothy N. Thomas ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Rajesh S. Ramanujam

IPC分类号： B23K26/08 ,  H01L21/66

CPC分类号： B23K26/0665 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/18 ,  B23K2101/40

摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.

摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。

公开(公告)号：US10421151B2

公开(公告)日：2019-09-24

申请号：US13789982

申请日：2013-03-08

申请人： Jiping Li ,  Aaron Muir Hunter ,  Thomas Haw

发明人： Jiping Li ,  Aaron Muir Hunter ,  Thomas Haw

IPC分类号： B23K26/00 ,  G01N21/59 ,  G01J5/02 ,  G01J5/08 ,  G01J1/04 ,  G01J5/00 ,  G01J5/06 ,  G01J5/58

摘要： Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.

公开(公告)号：US20130163091A1

公开(公告)日：2013-06-27

申请号：US13715804

申请日：2012-12-14

申请人： STEPHEN MOFFATT ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

发明人： STEPHEN MOFFATT ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC分类号： G02B27/10 ,  G02B27/14 ,  G02B27/12

CPC分类号： G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US08815719B2

公开(公告)日：2014-08-26

申请号：US13418069

申请日：2012-03-12

申请人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

发明人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

IPC分类号： H01L21/26 ,  H01L21/265

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/2658

摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

摘要翻译： 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

公开(公告)号：US08569187B2

公开(公告)日：2013-10-29

申请号：US13194775

申请日：2011-07-29

申请人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

发明人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  B23K26/00

CPC分类号： H01L21/477 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/127 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  F27B5/14 ,  H01L21/268 ,  H01S3/0057

摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

摘要翻译： 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。

公开(公告)号：US20120329178A1

公开(公告)日：2012-12-27

申请号：US13194775

申请日：2011-07-29

申请人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

发明人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC分类号： H01L21/66

CPC分类号： H01L21/477 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/127 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  F27B5/14 ,  H01L21/268 ,  H01S3/0057

摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

摘要翻译： 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。

公开(公告)号：US20110070724A1

公开(公告)日：2011-03-24

申请号：US12563764

申请日：2009-09-21

申请人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

发明人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

IPC分类号： H01L21/26

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/2658

摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

摘要翻译： 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。