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    XMR SENSORS WITH REDUCED DISCONTINUITIES
    2.
    发明申请
    XMR SENSORS WITH REDUCED DISCONTINUITIES 审中-公开
    具有减少不连续性的XMR传感器

    公开(公告)号：US20120098533A1

    公开(公告)日：2012-04-26

    申请号：US12908469

    申请日：2010-10-20

    申请人： Juergen Zimmer ,  Wolfgang Raberg

    发明人： Juergen Zimmer ,  Wolfgang Raberg

    IPC分类号： G01R33/02

    CPC分类号： G01R33/091 ,  G01R33/098

    摘要： Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.

    摘要翻译： 实施例涉及包括巨磁阻（GMR），隧道磁阻（TMR）或各向异性磁阻（AMR）的xMR传感器以及xMR传感器内的xMR条的配置。 在一个实施例中，xMR条包括多个不同尺寸和/或不同取向的串联连接部分。 在另一个实施例中，xMR条带包括变化的宽度或其它特征。 这种配置可以解决与常规xMR传感器相关的不连续性，并改善xMR传感器性能。

    Integrated circuit with magnetic material magnetically coupled to magneto-resistive sensing element
    3.
    发明授权
    Integrated circuit with magnetic material magnetically coupled to magneto-resistive sensing element 有权
    具有磁耦合到磁阻感测元件的磁性材料的集成电路

    公开(公告)号：US08174260B2

    公开(公告)日：2012-05-08

    申请号：US12198143

    申请日：2008-08-26

    申请人： Wolfgang Raberg ,  Juergen Zimmer

    发明人： Wolfgang Raberg ,  Juergen Zimmer

    IPC分类号： G01R33/02

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  H01L27/22 ,  Y10T29/49007

    摘要： An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. The magnetic material is magnetically coupled to the first magneto-resistive sensing element.

    摘要翻译： 一种集成电路，包括第一磁阻感测元件，磁性材料和间隔物。 磁性材料横向于第一磁阻感测元件。 间隔件位于第一磁阻感测元件和磁性材料之间。 磁性材料磁耦合到第一磁阻感测元件。

    Magnetoresistive magnetic field sensor structure
    4.
    发明授权
    Magnetoresistive magnetic field sensor structure 有权
    磁阻磁场传感器结构

    公开(公告)号：US08063633B2

    公开(公告)日：2011-11-22

    申请号：US12171185

    申请日：2008-07-10

    申请人： Wolfgang Raberg ,  Juergen Zimmer

    发明人： Wolfgang Raberg ,  Juergen Zimmer

    IPC分类号： G01R33/09 ,  H01L43/08

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L27/22 ,  Y10T29/4902

    摘要： A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

    摘要翻译： 一种磁场传感器结构，其包括具有第一基准磁化方向的第一参考层结构的自旋阀装置中的第一磁阻元件和具有第二参考层结构的自旋阀装置中的第二磁阻元件，所述第二参考层结构具有第二参考磁化强度 方向，其中所述第一和第二磁阻元件被布置在彼此垂直上方的层中并且通过中间层彼此电隔离，并且其中所述第一和第二参考磁化方向是不同的。

    Magnetic Encoder Element for Position Measurement
    5.
    发明申请
    Magnetic Encoder Element for Position Measurement 审中-公开
    用于位置测量的磁性编码器元件

    公开(公告)号：US20110101964A1

    公开(公告)日：2011-05-05

    申请号：US12613376

    申请日：2009-11-05

    申请人： Udo Ausserlechner ,  Tobias Werth ,  Peter Slama ,  Juergen Zimmer ,  Wolfgang Raberg ,  Stephan Schmitt ,  Martin Orasch

    发明人： Udo Ausserlechner ,  Tobias Werth ,  Peter Slama ,  Juergen Zimmer ,  Wolfgang Raberg ,  Stephan Schmitt ,  Martin Orasch

    IPC分类号： G01B7/30

    CPC分类号： G01D5/145 ,  G01D5/2457 ,  G01P3/487

    摘要： A magnetic encoder element for use in a position measurement system including a magnetic field sensor for measuring position along a first direction is disclosed. The encoder element includes at least one first track that includes a material providing a magnetic pattern along the first direction, the magnetic pattern being formed by a remanent magnetization vector that has a variable magnitude dependent on a position along the first direction. The gradient of the remanent magnetization vector is such that a resulting magnetic field in a corridor above the first track and at a predefined distance above the plane includes a field component perpendicular to the first direction that does not change its sign along the first direction.

    摘要翻译： 公开了一种用于位置测量系统的磁编码器元件，包括用于沿第一方向测量位置的磁场传感器。 所述编码器元件包括至少一个第一轨道，所述至少一个第一轨道包括沿着所述第一方向提供磁图案的材料，所述磁图案由具有取决于沿所述第一方向的位置的可变幅度的剩余磁化矢量形成。 剩余磁化矢量的梯度使得在第一轨道之上并且在平面上方的预定距离处的通道中产生的磁场包括垂直于第一方向的场分量，其不沿着第一方向改变其符号。

    XMR sensors with serial segment strip configurations
    7.
    发明授权
    XMR sensors with serial segment strip configurations 有权

    公开(公告)号：US11506732B2

    公开(公告)日：2022-11-22

    申请号：US12908469

    申请日：2010-10-20

    申请人： Juergen Zimmer ,  Wolfgang Raberg

    发明人： Juergen Zimmer ,  Wolfgang Raberg

    IPC分类号： G01R33/09

    摘要： Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.

    Magnetoresistive Magnetic Field Sensor Structure
    8.
    发明申请
    Magnetoresistive Magnetic Field Sensor Structure 有权
    磁阻磁场传感器结构

    公开(公告)号：US20090015252A1

    公开(公告)日：2009-01-15

    申请号：US12171185

    申请日：2008-07-10

    申请人： Wolfgang Raberg ,  Juergen Zimmer

    发明人： Wolfgang Raberg ,  Juergen Zimmer

    IPC分类号： G01R33/02 ,  H01F7/06

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L27/22 ,  Y10T29/4902

    摘要： A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

    摘要翻译： 一种磁场传感器结构，其包括具有第一基准磁化方向的第一参考层结构的自旋阀装置中的第一磁阻元件和具有第二参考层结构的自旋阀装置中的第二磁阻元件，所述第二参考层结构具有第二参考磁化强度 方向，其中所述第一和第二磁阻元件被布置在彼此垂直上方的层中并且通过中间层彼此电隔离，并且其中所述第一和第二参考磁化方向是不同的。

    Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
    9.
    发明授权
    Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy 有权
    磁场传感器在全桥电路中具有XMR元件，其具有共享相同形状各向异性的对角线元件

    公开(公告)号：US09411024B2

    公开(公告)日：2016-08-09

    申请号：US13451737

    申请日：2012-04-20

    申请人： Wolfgang Raberg

    发明人： Wolfgang Raberg

    IPC分类号： G01R33/09

    CPC分类号： G01R33/093 ,  G01R33/09 ,  G01R33/098

    摘要： Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.

    摘要翻译： 本发明的实施例提供一种磁场传感器。 磁场传感器包括连接在包括平行分支的全桥电路中的至少四个XMR元件。 至少四个XMR元件是GMR或TMR元件（GMR =巨磁电阻; TMR =隧道磁阻）。 全桥电路的两个对角XMR元件包括相同的形状各向异性，其中全桥电路的同一分支中的XMR元件包括不同的形状各向异性。

    Methods of manufacture MEMS devices
    10.
    发明授权
    Methods of manufacture MEMS devices 有权
    制造MEMS器件的方法

    公开(公告)号：US09266719B2

    公开(公告)日：2016-02-23

    申请号：US13406069

    申请日：2012-02-27

    申请人： Florian Schoen ,  Wolfgang Raberg ,  Bernhard Winkler ,  Werner Weber

    发明人： Florian Schoen ,  Wolfgang Raberg ,  Bernhard Winkler ,  Werner Weber

    IPC分类号： H01L41/00 ,  B81C1/00 ,  H01L41/09

    CPC分类号： B81C1/00182 ,  B81B2201/0271 ,  H01L41/0933 ,  Y10S977/732

    摘要： Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

    摘要翻译： 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。