公开(公告)号：US20240429230A1

公开(公告)日：2024-12-26

申请号：US18337657

申请日：2023-06-20

Applicant: Wolfspeed, Inc.

Inventor： Matthew King ,  Chris Hardiman ,  Kyle Bothe ,  Jeremy Fisher

IPC: H01L27/06 ,  H01L21/8252 ,  H01L23/66 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor device includes a semiconductor structure comprising first and second semiconductor layers having different bandgaps, first and second contacts on the semiconductor structure and free of a gate structure therebetween, and a resistor comprising a portion of the semiconductor structure that electrically connects the first and second contacts. The portion of the semiconductor structure may be a second portion of the second semiconductor layer that is recessed in thickness relative to a first portion thereof, and/or may include a passivation layer in direct contact with the second semiconductor layer. Related devices, packages, and fabrication methods are discussed.

公开(公告)号：US20230395695A1

公开(公告)日：2023-12-07

申请号：US18310684

申请日：2023-05-02

Applicant: Wolfspeed, Inc.

Inventor： Chris Hardiman ,  Matthew King ,  Kyle Bothe

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H01L29/40 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/407 ,  H01L21/3065 ,  H01J37/321 ,  H01J2237/334

Abstract: A transistor device includes a semiconductor structure comprising a channel layer and a barrier layer, source and drain contacts on the semiconductor structure, and a conductive element in a recess in the barrier layer between the source and drain contacts. The barrier layer has a first thickness adjacent the source or drain contact, a second thickness at a floor of the recess between the conductive element and the channel layer, and the first thickness is about 1.2 times to 4 times greater than the second thickness. Related methods of fabrication using a looped recess process are also discussed.