Semiconductor memory device having variable resistance memory and operating method
    1.
    发明授权
    Semiconductor memory device having variable resistance memory and operating method 有权
    具有可变电阻存储器和操作方法的半导体存储器件

    公开(公告)号:US09311981B2

    公开(公告)日:2016-04-12

    申请号:US13954161

    申请日:2013-07-30

    IPC分类号: G11C11/16

    摘要: A semiconductor memory device includes a memory cell array of nonvolatile memory cells having a variable resistance element, and a conductor line array capable of generating a compensation magnetic field for the nonvolatile memory cells. A current driver selectively supplies current to conductive lines, a magnetic field sensor senses an applied external magnetic field and generates external magnetic field information, and a controller controls generation of the compensation magnetic field in response to the external magnetic field information.

    摘要翻译: 半导体存储器件包括具有可变电阻元件的非易失性存储单元的存储单元阵列和能够产生用于非易失性存储单元的补偿磁场的导线阵列。 电流驱动器选择性地向导线提供电流,磁场传感器感测施加的外部磁场并产生外部磁场信息,并且控制器响应于外部磁场信息控制补偿磁场的产生。