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    METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD
    1.
    发明申请
    METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD 有权
    通过改性PEALD方法沉积具有Si-N键的电介质膜的方法

    公开(公告)号：US20110086516A1

    公开(公告)日：2011-04-14

    申请号：US12901323

    申请日：2010-10-08

    申请人： Woo Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    发明人： Woo Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC分类号： H01L21/318

    CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

    摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD
    2.
    发明申请
    METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD 有权
    通过改性PEALD方法沉积介质膜的方法

    公开(公告)号：US20120220139A1

    公开(公告)日：2012-08-30

    申请号：US13410970

    申请日：2012-03-02

    申请人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    发明人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC分类号： H01L21/31

    CPC分类号： C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

    摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    Method of forming conformal film having si-N bonds on high-aspect ratio pattern
    3.
    发明授权
    Method of forming conformal film having si-N bonds on high-aspect ratio pattern 有权
    在高纵横比图案上形成具有si-N键的保形膜的方法

    公开(公告)号：US08394466B2

    公开(公告)日：2013-03-12

    申请号：US12875889

    申请日：2010-09-03

    申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    IPC分类号： H05H1/24

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

    摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

    Method of Forming Conformal Film Having Si-N Bonds on High-Aspect Ratio Pattern
    4.
    发明申请
    Method of Forming Conformal Film Having Si-N Bonds on High-Aspect Ratio Pattern 有权
    在高比例图案上形成具有Si-N键的保形膜的方法

    公开(公告)号：US20120058282A1

    公开(公告)日：2012-03-08

    申请号：US12875889

    申请日：2010-09-03

    申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    IPC分类号： C23C16/505 ,  C23C16/34

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

    摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。