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公开(公告)号:US5991326A
公开(公告)日:1999-11-23
申请号:US60227
申请日:1998-04-14
CPC分类号: H01S5/18311 , H01L33/105 , H01S5/0614 , H01S5/18341 , H01S5/18358 , H01S5/18366 , H01S5/18372 , H01S5/3095 , H01S5/3201 , H01S5/4018
摘要: A monolithic long-wavelength vertical optical cavity device built up along a vertical direction. The device, when designed as a surface emitting laser, has a bottom Distributed Bragg Reflector (DBR), an active region consisting of active bulk medium or quantum wells, a current confinement layer next to the active layer, and a top DBR. The bottom DBR and the active region are lattice matched to the lattice defining material, while the top DBR is lattice relaxed. The design achieves high reflectivity, low absorption and diffraction loss. The design also ensures low production cost due to low precision requirement and wafer size production. The device can be used as a light detector when the active region is replaced by a spacer or a optical filter.