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    Tunable semiconductor laser system
    1.
    发明授权
    Tunable semiconductor laser system 有权
    可调谐半导体激光系统

    公开(公告)号：US06351476B2

    公开(公告)日：2002-02-26

    申请号：US09761542

    申请日：2001-01-16

    申请人： Peter Kner ,  Gabriel Li ,  D. Philip Worland ,  Rang-Chen Yu ,  Wupen Yuen

    发明人： Peter Kner ,  Gabriel Li ,  D. Philip Worland ,  Rang-Chen Yu ,  Wupen Yuen

    IPC分类号： H01S310

    CPC分类号： H01S5/06804 ,  H01L2224/48091 ,  H01L2924/16195 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/0687 ,  H01S5/18366 ,  H01L2924/00014

    摘要： A tunable semiconductor laser system includes a laser with a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material. First and second reflective members are positioned at opposing edges of the active and confining regions. A wavelength tuning member and a temperature sensor are coupled to the laser. A control loop is coupled to the temperature sensor and the tuning member. In response to a detected change in temperature the control loop sends an adjustment signal to the tuning member and the tuning member adjusts a voltage or current supplied to the laser to provide a controlled output beam of selected wavelength.

    摘要翻译： 可调谐半导体激光器系统包括具有半导体有源区域的激光器，该半导体有源区域位于相对的半导体材料的上部和下部约束区域之间。 第一和第二反射构件定位在活动和限制区域的相对边缘处。 波长调谐构件和温度传感器耦合到激光器。 控制回路耦合到温度传感器和调谐构件。 响应于检测到的温度变化，控制回路向调谐构件发送调整信号，并且调谐构件调节提供给激光器的电压或电流以提供所选波长的受控输出光束。

    Tunable semiconductor laser system
    2.
    发明授权
    Tunable semiconductor laser system 有权
    可调谐半导体激光系统

    公开(公告)号：US06327287B1

    公开(公告)日：2001-12-04

    申请号：US09684290

    申请日：2000-10-06

    申请人： Peter Kner ,  Gabriel Ll ,  Philip Worland ,  Rang-Chen Yu ,  Wupen Yuen

    发明人： Peter Kner ,  Gabriel Ll ,  Philip Worland ,  Rang-Chen Yu ,  Wupen Yuen

    IPC分类号： H01S318

    CPC分类号： H01S5/06804 ,  H01L2224/48091 ,  H01L2924/16195 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/0687 ,  H01S5/18366 ,  H01L2924/00014

    摘要： A tunable semiconductor laser assembly includes a laser with a seal surface, a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material and first and second reflective members positioned at opposing edges of the active and confining regions. A seal cap includes a seal ring. The seal cap seal ring is coupled to the seal surface and forms a hermetic seal. A wavelength tuning member and a temperature sensor is coupled to the laser. A temperature sensor coupled to the laser. A control loop is coupled to the temperature sensor and the tuning member. In response to a detected change in temperature the control loop sends an adjustment signal to the tuning member, and the tuning member adjusts a voltage or current supplied to the laser to provide a controlled frequency and power of an output beam.

    摘要翻译： 可调谐半导体激光器组件包括具有密封表面的激光器，位于相对型半导体材料的上限制区域和下限制区域之间的半导体有源区域以及位于激活和限制区域的相对边缘处的第一和第二反射构件。 密封盖包括密封环。 密封盖密封环联接到密封表面并形成气密密封。 波长调谐构件和温度传感器耦合到激光器。 耦合到激光器的温度传感器。 控制回路耦合到温度传感器和调谐构件。 响应于检测到的温度变化，控制环路向调谐构件发送调整信号，并且调谐构件调节提供给激光器的电压或电流以提供输出光束的受控频率和功率。

    Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
    4.
    发明授权
    Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays 失效
    多波长垂直腔光电器件阵列的制作

    公开(公告)号：US06174749B1

    公开(公告)日：2001-01-16

    申请号：US09078195

    申请日：1998-05-13

    申请人： Wupen Yuen ,  Constance J. Chang-Hasnain ,  Gabriel S. Li

    发明人： Wupen Yuen ,  Constance J. Chang-Hasnain ,  Gabriel S. Li

    IPC分类号： H01L2100

    CPC分类号： H01S5/18358 ,  H01L33/0062 ,  H01L33/105 ,  H01S5/0042 ,  H01S5/2077 ,  H01S5/4087 ,  H01S5/423 ,  H01S2304/02

    摘要： The present invention provides multiple-wavelength vertical-cavity surface-emitting laser (“MW-VCSEL”) arrays. These arrays are fabricated in a molecular beam epitaxy system or the like using two patterned-substrate growth techniques. The growth techniques can be used with an in-situ laser reflectometry. In one embodiment, a temperature dependent growth rate to create the devices is provided. In an alternative aspect, uniform growth is performed followed by a temperature-dependent desorption technique. These techniques provided desired wavelength span and desired characteristics.

    摘要翻译： 本发明提供了多波长垂直腔表面发射激光器（“MW-VCSEL”）阵列。 这些阵列使用两种图案化衬底生长技术在分子束外延系统等中制造。 生长技术可以使用原位激光反射计。 在一个实施例中，提供了用于创建装置的温度依赖性增长率。 在另一方面，进行均匀生长，然后进行温度依赖性解吸技术。 这些技术提供了期望的波长范围和期望的特性。

    Vertical optical cavities produced with selective area epitaxy
    6.
    发明授权
    Vertical optical cavities produced with selective area epitaxy 失效
    用选择性面积外延生产的垂直光学腔

    公开(公告)号：US06222871B1

    公开(公告)日：2001-04-24

    申请号：US09337790

    申请日：1999-06-22

    申请人： Constance Chang-Hasnain ,  Gabriel Li ,  Wupen Yuen

    发明人： Constance Chang-Hasnain ,  Gabriel Li ,  Wupen Yuen

    IPC分类号： H01S5183

    CPC分类号： H01S5/18358 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/18388 ,  H01S5/2077 ,  H01S5/4087 ,  H01S5/423 ,  H01S2301/18

    摘要： A monolithic vertical optical cavity device built up along a vertical direction. The device has a bottom Distributed Bragg Reflector (DBR), a Quantum Well (QW) region consisting of least one active layer grown on top of the bottom DBR by using a Selective Area Epitaxy (SAE) mask such that the active layer or layers exhibit a variation in at least one physical parameter in a horizontal plane perpendicular to the vertical direction and a top DBR deposited on top of the QW region. A spacer is deposited with or without SAE adjacent the QW region. The device has a variable Fabry-Perot distance defined along the vertical direction between the bottom DBR and the top DBR and a variable physical parameter of the active layer. The varying physical parameter of the active layers is either their surface curvature and/or the band gap and both of these parameters are regulated by SAE. The monolithic vertical cavity device can be used as a Vertical Cavity Surface Emitting Laser (VCSEL) or a Vertical Cavity Detector (VCDET).

    摘要翻译： 沿垂直方向建立的单片垂直光学腔装置。 该器件具有底部分布布拉格反射器（DBR），量子阱（QW）区域，其由通过选择区域外延（SAE）掩模在底部DBR顶部生长的至少一个活性层组成，使得活性层或层显示 垂直于垂直方向的水平面中的至少一个物理参数的变化和沉积在QW区域顶部的顶部DBR。 隔离层沉积有或没有与邻近QW区域的SAE。 该装置具有沿底部DBR和顶部DBR之间的垂直方向限定的可变法布里 - 珀罗距离以及有源层的可变物理参数。 活性层的变化的物理参数是它们的表面曲率和/或带隙，并且这些参数都由SAE调节。 单片垂直腔装置可用作垂直腔面发射激光器（VCSEL）或垂直腔探测器（VCDET）。

    Vertical optical cavities produced with selective area epitaxy
    7.
    发明授权
    Vertical optical cavities produced with selective area epitaxy 失效
    用选择性面积外延生产的垂直光学腔

    公开(公告)号：US5960024A

    公开(公告)日：1999-09-28

    申请号：US50657

    申请日：1998-03-30

    申请人： Gabriel S. Li ,  Wupen Yuen ,  Constance J. Chang-Hasnain

    发明人： Gabriel S. Li ,  Wupen Yuen ,  Constance J. Chang-Hasnain

    IPC分类号： H01S5/183 ,  H01S5/20 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19

    CPC分类号： H01S5/18358 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/423 ,  H01S2301/18 ,  H01S5/18388 ,  H01S5/2077 ,  H01S5/4087

    摘要： A monolithic vertical optical cavity device built up along a vertical direction. The device has a bottom Distributed Bragg Reflector (DBR), a Quantum Well (QW) region consisting of least one active layer grown on top of the bottom DBR by using a Selective Area Epitaxy (SAE) mask such that the active layer or layers exhibit a variation in at least one physical parameter in a horizontal plane perpendicular to the vertical direction and a top DBR deposited on top of the QW region. A spacer is deposited with or without SAE adjacent the QW region. The device has a variable Fabry-Perot distance defined along the vertical direction between the bottom DBR and the top DBR and a variable physical parameter of the active layer. The varying physical parameter of the active layers is either their surface curvature and/or the band gap and both of these parameters are regulated by SAE. The monolithic vertical cavity device can be used as a Vertical Cavity Surface Emitting Laser (VCSEL) or a Vertical Cavity Detector (VCDET).

    摘要翻译： 沿垂直方向建立的单片垂直光学腔装置。 该器件具有底部分布布拉格反射器（DBR），量子阱（QW）区域，其由通过选择区域外延（SAE）掩模在底部DBR顶部生长的至少一个活性层组成，使得活性层或层显示 垂直于垂直方向的水平面中的至少一个物理参数的变化和沉积在QW区域顶部的顶部DBR。 隔离层沉积有或没有与邻近QW区域的SAE。 该装置具有沿底部DBR和顶部DBR之间的垂直方向限定的可变的法布里 - 珀罗距离以及有源层的可变物理参数。 活性层的变化的物理参数是它们的表面曲率和/或带隙，并且这些参数都由SAE调节。 单片垂直腔装置可用作垂直腔面发射激光（VCSEL）或垂直腔探测器（VCDET）。