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公开(公告)号：US20240113254A1
公开(公告)日：2024-04-04
申请号：US18541090
申请日：2023-12-15
发明人： Yung-Ling LAN , Chan-Chan LING , Chi-Ming TSAI , Chia-Hung CHANG
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US20210210654A1
公开(公告)日：2021-07-08
申请号：US17209485
申请日：2021-03-23
发明人： Yung-Ling LAN , Chan-Chan LING , Chi-Ming TSAI , Chia-Hung CHANG
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US20240145632A1
公开(公告)日：2024-05-02
申请号：US18492427
申请日：2023-10-23
发明人： Ming-Chun TSENG , Shaohua HUANG , Hongwei WANG , Kang-Wei PENG , Su-Hui LIN , Xiaomeng LI , Chi-Ming TSAI , Chung-Ying CHANG
IPC分类号： H01L33/38 , H01L25/075 , H01L33/22 , H01L33/40 , H01L33/42
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/30
摘要： A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.
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公开(公告)号：US20190280155A1
公开(公告)日：2019-09-12
申请号：US16426016
申请日：2019-05-30
发明人： Yung-Ling LAN , Chan-Chan LING , Chi-Ming TSAI , Chia-Hung CHANG
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first potential barrier layer, a first capping layer, a second capping layer, and an electron barrier layer stacked in order on a growth substrate. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is an undoped semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.
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