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公开(公告)号：US10026867B2
公开(公告)日：2018-07-17
申请号：US15687458
申请日：2017-08-26
Inventor： Jinjian Zheng , Huanrong Yang , Feilin Xun , Shutao Liao , Zhijie Li , Mingyue Wu , Chilun Chou , Feng Lin , Shuiqing Li , Junyong Kang
Abstract: A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.
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Patent Agency Ranking
公开(公告)号：US11557580B2
公开(公告)日：2023-01-17
申请号：US17447325
申请日：2021-09-10
Inventor： Zhibai Zhong , Chia-En Lee , Jinjian Zheng , Jiansen Zheng , Chen-Ke Hsu , Junyong Kang
Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.
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公开(公告)号：US11804584B2
公开(公告)日：2023-10-31
申请号：US17027405
申请日：2020-09-21
Inventor： Zhibai Zhong , Chia-En Lee , Jinjian Zheng , Zheng Wu , Chen-Ke Hsu , Junyong Kang
IPC: H01L33/62 , H01L33/00 , H01L33/36 , H01L25/075
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/0093 , H01L33/36 , H01L2933/0016 , H01L2933/0066
Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.
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公开(公告)号：US10276750B2
公开(公告)日：2019-04-30
申请号：US15859543
申请日：2017-12-31
Inventor： Zhibai Zhong , Lixun Yang , Jinjian Zheng , Chia-en Lee , Chen-ke Hsu , Junyong Kang
Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.
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公开(公告)号：US11127723B2
公开(公告)日：2021-09-21
申请号：US15929677
申请日：2020-05-15
Inventor： Zhibai Zhong , Chia-En Lee , Jinjian Zheng , Jiansen Zheng , Chen-Ke Hsu , Junyong Kang
Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.
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公开(公告)号：US11101239B2
公开(公告)日：2021-08-24
申请号：US16865186
申请日：2020-05-01
Inventor： Zhibai Zhong , Chia-en Lee , Jinjian Zheng , Lixun Yang , Chen-ke Hsu , Junyong Kang
Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.
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