公开(公告)号：US11101239B2

公开(公告)日：2021-08-24

申请号：US16865186

申请日：2020-05-01

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhibai Zhong ,  Chia-en Lee ,  Jinjian Zheng ,  Lixun Yang ,  Chen-ke Hsu ,  Junyong Kang

IPC: H01L21/44 ,  H01L23/00 ,  H01L21/56

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

公开(公告)号：US09219194B2

公开(公告)日：2015-12-22

申请号：US14588087

申请日：2014-12-31

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Junpeng Shi ,  Jiali Zhuo ,  Lixun Yang ,  Shaohua Huang

IPC: H01L29/18 ,  H01L33/14 ,  H01L33/38 ,  H01L33/00 ,  H01L33/46 ,  H01L33/40

CPC classification number: H01L33/145 ,  H01L33/0079 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A flip-chip LED includes a substrate, having a surface with a p-region metal portion and an n-region metal portion separated from each other; a p-type epitaxial layer, an active layer and an n-type epitaxial layer successively laminated on the substrate; a reflection layer between the substrate and the p-type epitaxial layer; a current blocking layer between the reflection layer and the p-type epitaxial layer and positioned to prevent the current from concentrating on the edge of the LED; an insulating protection layer cladding the LED side wall and exposing part of the side wall of the n-type epitaxial layer; a P electrode connecting the metal reflection layer and the p-region metal portion of the substrate; and an N electrode connecting the side wall of the n-type epitaxial layer and n-region metal portion of the substrate.

Abstract translation: 倒装LED包括具有p区域金属部分的表面和分离的n区域金属部分的基板; p型外延层，有源层和n型外延层，依次层压在基板上; 在所述衬底和所述p型外延层之间的反射层; 反射层和p型外延层之间的电流阻挡层，并被定位成防止电流集中在LED的边缘上; 绝缘保护层包覆LED侧壁并暴露n型外延层的侧壁的一部分; 连接所述金属反射层和所述基板的p区域金属部的P电极; 以及连接n型外延层的侧壁和基板的n区金属部分的N电极。

公开(公告)号：US10276750B2

公开(公告)日：2019-04-30

申请号：US15859543

申请日：2017-12-31

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhibai Zhong ,  Lixun Yang ,  Jinjian Zheng ,  Chia-en Lee ,  Chen-ke Hsu ,  Junyong Kang

IPC: H01L33/36 ,  H01L21/02 ,  H01L23/00 ,  H01L33/08 ,  H01L33/40 ,  H01L33/62

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

公开(公告)号：US20210320233A1

公开(公告)日：2021-10-14

申请号：US17356755

申请日：2021-06-24

Applicant: Xiamen Sanan Optoelectronics Technology Co., LTD

Inventor： Hailin Rao ,  Shaohua Huang ,  Xiaoqiang Zeng ,  Lixun Yang ,  Shuiqing LI ,  Linrong CAI

IPC: H01L33/58 ,  H01L33/48 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device includes an LED chip disposed on a supporting component. The LED chip includes a semiconductor stack formed on a substrate, a first electrode, and a second electrode. A light-blocking layer fills the supporting component to cover a lateral side of the LED chip and expose a top chip surface of the LED chip. The light-blocking layer has a top surface not lower than the top chip surface of the LED chip. A height difference among the top chip surface, the top surface of the light-blocking layer and a top end of the supporting component is less than 10 μm. A top light exit port defined by the light-blocking layer to expose the top chip surface has a cross sectional area not larger than that of the top chip surface.

公开(公告)号：US09312449B2

公开(公告)日：2016-04-12

申请号：US14641424

申请日：2015-03-08

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lixun Yang ,  Junpeng Shi ,  Xinghua Liang ,  Gaolin Zheng ,  Zhibai Zhong ,  Shaohua Huang ,  Chih-Wei Chao

IPC: H01L33/14 ,  H01L33/40 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62

Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.

Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备​​的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。