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公开(公告)号：US11101239B2
公开(公告)日：2021-08-24
申请号：US16865186
申请日：2020-05-01
Inventor： Zhibai Zhong , Chia-en Lee , Jinjian Zheng , Lixun Yang , Chen-ke Hsu , Junyong Kang
Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.
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Patent Agency Ranking
公开(公告)号：US10014460B2
公开(公告)日：2018-07-03
申请号：US15418774
申请日：2017-01-29
Inventor： Zhibai Zhong , Yen-chih Chiang , Qiuyan Fang , Chia-en Lee , Chen-ke Hsu
CPC classification number: H01L33/647 , H01L25/0753 , H01L33/44 , H01L33/50 , H01L33/502 , H01L33/60 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0075
Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.
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公开(公告)号：US10297733B2
公开(公告)日：2019-05-21
申请号：US15390951
申请日：2016-12-27
Inventor： Hou-jun Wu , Jiansen Zheng , Chen-ke Hsu , Anhe He , Chia-en Lee
Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ≤0.4 μm, such as ≤0.3 μm), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.
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公开(公告)号：US10276750B2
公开(公告)日：2019-04-30
申请号：US15859543
申请日：2017-12-31
Inventor： Zhibai Zhong , Lixun Yang , Jinjian Zheng , Chia-en Lee , Chen-ke Hsu , Junyong Kang
Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.
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公开(公告)号：US10186637B2
公开(公告)日：2019-01-22
申请号：US15417227
申请日：2017-01-27
Inventor： Zhibai Zhong , Wen-yu Lin , Yen-chih Chiang , Jianming Liu , Chia-en Lee , Su-hui Lin , Chen-ke Hsu
Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.
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公开(公告)号：US10283677B2
公开(公告)日：2019-05-07
申请号：US15418670
申请日：2017-01-27
Inventor： Xinghua Liang , Hongquan He , Chia-en Lee , Te-Ling Hsia , Su-hui Lin , Chen-ke Hsu
Abstract: A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; and an electrode on the semiconductor layer composed of a body and an extension body, wherein, the electrode extension portion is in a certain angle with the contacting semiconductor layer and separates the electrode body from the light emitted to its top surface and sides with a semi-wrapping structure.
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