公开(公告)号：US20150295130A1

公开(公告)日：2015-10-15

申请号：US14748516

申请日：2015-06-24

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： XINGHUA LIANG ,  TE-LING HSIA ,  CHENKE HSU ,  CHIH-WEI CHAO ,  SHUIQING LI

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/145 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/10

Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.

Abstract translation: 一种发光装置，具有小的老化漏电和高发光效率及其制造，其中，发光装置包括：半导体外延层叠层，其包括N型半导体层，P型半导体层和 N型半导体层和P型半导体层之间的发光层，其表面具有偏转位错; 通过预处理填充在N型或/或P型半导体层表面上的偏转位错的电迁移金属，以阻挡由于偏转位错而形成在半导体外延层叠层上的电迁移通道，以消除漏电。

公开(公告)号：US20150179889A1

公开(公告)日：2015-06-25

申请号：US14641424

申请日：2015-03-08

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： LIXUN YANG ,  JUNPENG SHI ,  XINGHUA LIANG ,  GAOLIN ZHENG ,  ZHIBAI ZHONG ,  SHAOHUA HUANG ,  CHIH-WEI CHAO

IPC: H01L33/40 ,  H01L33/14 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62

Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.

Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备​​的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。