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1.发明申请公开(公告)号：US20150144875A1
公开(公告)日：2015-05-28
申请号：US14612156
申请日：2015-02-02
Inventor： ZHIBAI ZHONG , JIANJIAN YANG , WENXIN CHEN , ZHAOXUAN LIANG
CPC classification number: H01L33/0025 , H01L27/153 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/405 , H01L2933/0016 , H01L2933/0083
Abstract: An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance.
Abstract translation: 一种紫外线半导体发光器件，包括：包含n型半导体层，发光层和p型半导体层的发光外延层; 在发光外延层的非发光表面处的隧道结，并且具有带有露出发光外延层的开口的图案化结构; 在发光外延层的表面层上的光学相位匹配层，并且透过紫外光; 以及覆盖整个隧道结和光学相位匹配层的反射层。 在隧道结上方设有一个图形结构，用于全角度反射。 隧道结的一部分与反射金属的低功函数形成欧姆接触。 图案化分布设计可有效降低欧姆接触电阻。
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公开(公告)号：US20150179889A1
公开(公告)日：2015-06-25
申请号：US14641424
申请日：2015-03-08
Inventor： LIXUN YANG , JUNPENG SHI , XINGHUA LIANG , GAOLIN ZHENG , ZHIBAI ZHONG , SHAOHUA HUANG , CHIH-WEI CHAO
CPC classification number: H01L33/405 , H01L33/145 , H01L33/38 , H01L33/62
Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.
Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。
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Patent Agency Ranking
公开(公告)号：US20150179893A1
公开(公告)日：2015-06-25
申请号：US14639996
申请日：2015-03-05
Inventor： ZHIBAI ZHONG , SHUIQING LI , JIANJIAN YANG , CHANYUAN ZHANG , CHARLES SIU-HUEN LEUNG
CPC classification number: H01L33/60 , H01L27/156 , H01L33/382 , H01L33/405 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
Abstract: A semiconductor light-emitting device is configured to prevent or reduce metal migration. The device includes: an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a reflecting layer disposed over the p-type semiconductor layer and containing a metal that tends to migrate; a well ring structure at the p-type semiconductor layer and substantially surrounding the reflecting layer to prevent the metal from migrating towards a side wall of the device; and a metal coating layer over the reflecting layer and extending towards the well ring structure to form an ohmic contact with the p-type semiconductor of the entire well ring structure. The device reliability is improved as the p-type semiconductor layer forms a well ring structure have “pining” effect surrounding the reflecting layer, thereby preventing the metal from migrating towards the device edge along the contact surface between the reflecting layer and the p-type semiconductor.
Abstract translation: 半导体发光器件被配置为防止或减少金属迁移。 该器件包括：n型半导体层，发光层和p型半导体层; 反射层，设置在所述p型半导体层上并含有易于迁移的金属; 在p型半导体层处的阱环结构，并且基本上围绕反射层，以防止金属向器件的侧壁迁移; 以及在反射层上方的金属涂层，并且朝着阱环结构延伸以与整个阱环结构的p型半导体形成欧姆接触。 随着p型半导体层形成具有围绕反射层的“冲击”效应，p型半导体层具有“反射层”效应，从而防止金属沿着反射层与p型之间的接触面向器件边缘迁移 半导体。
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公开(公告)号：US20200335383A1
公开(公告)日：2020-10-22
申请号：US16903829
申请日：2020-06-17
Inventor： CHEN-KE HSU , ZHIBAI ZHONG , CHIA-EN LEE , JINJIAN ZHENG , ZHENG WU , SHAO-YING TING
IPC: H01L21/683 , H01L21/677
Abstract: A micro device transferring apparatus includes a first conveying mechanism, a carrier unit, a push device and a release device. The first conveying mechanism includes a release tape having a release adhesive, a first roller connected to an end of the release tape, and a conveying device connected to a horizontal section of the release tape to drive the release tape to move in a moving direction. The carrier unit includes a first carrier holding multiple micro devices, and a second carrier for receiving the micro devices. The push device is for pushing the release tape to pick up the micro devices with the release adhesive. The release device is for decomposing the release adhesive to release the micro devices.
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公开(公告)号：US20200273848A1
公开(公告)日：2020-08-27
申请号：US15929677
申请日：2020-05-15
Inventor： ZHIBAI ZHONG , CHIA-EN LEE , JINJIAN ZHENG , JIANSEN ZHENG , CHEN-KE HSU , JUNYONG KANG
Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.
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公开(公告)号：US20230163115A1
公开(公告)日：2023-05-25
申请号：US18153256
申请日：2023-01-11
Inventor： ZHIBAI ZHONG , CHIA-EN LEE , JINJIAN ZHENG , JIANSEN ZHENG , CHEN-KE HSU , JUNYONG KANG
CPC classification number: H01L25/167 , H01L33/0093 , H01L33/0095
Abstract: A semiconductor device includes a transfer substrate, an array of connecting structures, and an array of micro semiconductor elements. Each of the micro semiconductor elements has a semiconductor layered unit and at least one electrode. Each of the connecting structures interconnects a respective one of the micro semiconductor elements and the transfer substrate. In each of the micro semiconductor elements, the electrode is disposed on the semiconductor layered unit opposite to a respective one of the connecting structures. A width of at least a part of each of the connecting structures is smaller than a width of a connecting surface of the semiconductor layered unit of the respective one of the micro semiconductor elements. The connecting surface of the semiconductor layered unit of each of the micro semiconductor elements is connected to the respective one of the connecting structures.
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公开(公告)号：US20150311389A1
公开(公告)日：2015-10-29
申请号：US14742150
申请日：2015-06-17
Inventor： WEN-YU LIN , MENG-HSIN YEH , ZHIBAI ZHONG
CPC classification number: H01L33/22 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L25/0753 , H01L27/15 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/44 , H01L2924/0002 , H01L2933/0025 , H01L2924/00
Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.
Abstract translation: 一种氮化物发光二极管，包括：表面上具有亚微细图案的基板，其分为生长区域和非生长区域; 生长阻挡层，形成在用于阻挡衬底的非生长区域中的外延生长的衬底的非生长区域中; 在衬底的生长区域中形成的n型层，发光层和p型层的发光外延层，其通过横向外延延伸到非生长区域并覆盖生长 阻挡层; 其中，生长阻挡层的折射率小于发光外延层的折射率，并且生长阻挡层沿着衬底的亚微观图案形成起伏的形态，因此增加LED的光提取界面，产生折射率 发光外延层和光提取界面之间的差异，并提高光提取效率。
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