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Patent Agency Ranking
公开(公告)号：US20170005245A1
公开(公告)日：2017-01-05
申请号：US15192993
申请日：2016-06-24
Inventor： CHEN-KE HSU , JUNPENG SHI , PEI-SONG CAI , ZHENDUAN LIN , HAO HUANG , CHENJIE LIAO , CHIH-WEI CHAO , QIUXIA LIN
CPC classification number: H01L33/60 , H01L33/505 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/62 , H01L2224/04105 , H01L2224/19 , H01L2924/18162 , H01L2933/0016 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091
Abstract: A light emitting diode package structure includes: a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; a second reflecting material layer surrounding the first transparent material layer, the interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and a wavelength conversion material layer covered over the above structure.
Abstract translation: 发光二极管封装结构包括：具有通孔的第一反射材料层; 第一反射材料层上的倒装芯片，电极嵌入第一反射材料层的通孔中; 围绕除了电极之外的倒装芯片的侧表面的第一透明材料层; 围绕第一透明材料层的第二反射材料层，第一透明材料层和反射材料层之间的界面是倾斜平面，弧形平面或不规则形状，从而有助于倒装芯片的向上的光反射; 以及覆盖上述结构的波长转换材料层。
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公开(公告)号：US20150179889A1
公开(公告)日：2015-06-25
申请号：US14641424
申请日：2015-03-08
Inventor： LIXUN YANG , JUNPENG SHI , XINGHUA LIANG , GAOLIN ZHENG , ZHIBAI ZHONG , SHAOHUA HUANG , CHIH-WEI CHAO
CPC classification number: H01L33/405 , H01L33/145 , H01L33/38 , H01L33/62
Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.
Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。
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公开(公告)号：US20150108514A1
公开(公告)日：2015-04-23
申请号：US14588087
申请日：2014-12-31
Inventor： JUNPENG SHI , JIALI ZHUO , LIXUN YANG , SHAOHUA HUANG
CPC classification number: H01L33/145 , H01L33/0079 , H01L33/385 , H01L33/405 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: A flip-chip LED includes a substrate, having a surface with a p-region metal portion and an n-region metal portion separated from each other; a p-type epitaxial layer, an active layer and an n-type epitaxial layer successively laminated on the substrate; a reflection layer between the substrate and the p-type epitaxial layer; a current blocking layer between the reflection layer and the p-type epitaxial layer and positioned to prevent the current from concentrating on the edge of the LED; an insulating protection layer cladding the LED side wall and exposing part of the side wall of the n-type epitaxial layer; a P electrode connecting the metal reflection layer and the p-region metal portion of the substrate; and an N electrode connecting the side wall of the n-type epitaxial layer and n-region metal portion of the substrate.
Abstract translation: 倒装LED包括具有p区域金属部分的表面和分离的n区域金属部分的基板; p型外延层，有源层和n型外延层，依次层压在基板上; 在所述衬底和所述p型外延层之间的反射层; 反射层和p型外延层之间的电流阻挡层，并被定位成防止电流集中在LED的边缘上; 绝缘保护层包覆LED侧壁并暴露n型外延层的侧壁的一部分; 连接所述金属反射层和所述基板的p区域金属部的P电极; 以及连接n型外延层的侧壁和基板的n区金属部分的N电极。
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公开(公告)号：US20210005791A1
公开(公告)日：2021-01-07
申请号：US16948441
申请日：2020-09-18
Inventor： JUNPENG SHI , ZHEN-DUAN LIN , CHEN-KE HSU , PING ZHANG
IPC: H01L33/50 , H01L25/075
Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.
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公开(公告)号：US20160020373A1
公开(公告)日：2016-01-21
申请号：US14725822
申请日：2015-05-29
Inventor： JUNPENG SHI , PEI-SONG CAI , HAO HUANG , ZHENDUAN LIN , CHIH-WEI CHAO , CHEN-KE HSU
IPC: H01L33/62 , H01L25/075 , H01L33/52 , H01L33/60 , H01L33/64
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/60 , H01L33/647 , H01L2224/48091 , H01L2224/48137 , H01L2224/48464 , H01L2924/00014
Abstract: A light-emitting device includes a base having an insulating part and a metal block; a light-emitting diode (LED) chip over the base; a water soluble paste between the LED chip and the base metal block for chip fixing and heat conduction; packaging glue covering the LED chip; and the LED chip bottom, water soluble paste and the base metal block form an all-metal thermal conducting path to achieve low a thermal resistance.
Abstract translation: 发光器件包括具有绝缘部分和金属块的基底; 一个位于基座上的发光二极管（LED）芯片; 在LED芯片和基底金属块之间的水溶性糊料用于芯片固定和热传导; 包装胶覆盖LED芯片; LED芯片底部，水溶性糊料和贱金属块形成全金属导热通路，实现低热阻。
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