公开(公告)号：US20240413291A1

公开(公告)日：2024-12-12

申请号：US18811718

申请日：2024-08-21

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

公开(公告)号：US20230178684A1

公开(公告)日：2023-06-08

申请号：US17984956

申请日：2022-11-10

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Bin JIANG ,  Yashu ZANG ,  Chung-Ying CHANG ,  Kang-Wei PENG ,  Sihe CHEN ,  Siyi LONG ,  Mingchun TSENG ,  Gong CHEN ,  Weichun TSENG

IPC: H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/62

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.

公开(公告)号：US20190115511A1

公开(公告)日：2019-04-18

申请号：US16147604

申请日：2018-09-29

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L27/15

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.