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公开(公告)号：US20220302345A1
公开(公告)日：2022-09-22
申请号：US17806528
申请日：2022-06-13
Inventor： Jiangbin ZENG , Anhe HE , Ling-yuan HONG , Kang-Wei PENG , Su-hui LIN , Chia-Hung CHANG
Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.
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公开(公告)号：US20230178684A1
公开(公告)日：2023-06-08
申请号：US17984956
申请日：2022-11-10
Inventor： Bin JIANG , Yashu ZANG , Chung-Ying CHANG , Kang-Wei PENG , Sihe CHEN , Siyi LONG , Mingchun TSENG , Gong CHEN , Weichun TSENG
CPC classification number: H01L33/10 , H01L33/32 , H01L33/382 , H01L33/62
Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.
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公开(公告)号：US20210336080A1
公开(公告)日：2021-10-28
申请号：US17366268
申请日：2021-07-02
Inventor： Qing WANG , Dazhong CHEN , Sheng-Hsien HSU , Ling-yuan HONG , Kang-Wei PENG , Si-hui LIN , Chia-Hung CHANG
Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.
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公开(公告)号：US20210083145A1
公开(公告)日：2021-03-18
申请号：US17105294
申请日：2020-11-25
Inventor： Feng WANG , Gong CHEN , Hongwei XIA , Yu ZHAN , Ling-Yuan HONG , Su-Hui LIN , Kang-Wei PENG , Chia-Hung CHANG
Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.
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