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    Magnetic device definition with uniform biasing control
    1.
    发明授权
    Magnetic device definition with uniform biasing control 有权
    具有均匀偏置控制的磁性装置定义

    公开(公告)号：US08318030B2

    公开(公告)日：2012-11-27

    申请号：US12502180

    申请日：2009-07-13

    申请人： Xilin Peng ,  Stacey C. Wakeham ,  Yifan Zhang ,  Zhongyan Wang ,  Konstantin R. Nikolaev ,  Mark Henry Ostrowski ,  Yonghua Chen ,  Juren Ding

    发明人： Xilin Peng ,  Stacey C. Wakeham ,  Yifan Zhang ,  Zhongyan Wang ,  Konstantin R. Nikolaev ,  Mark Henry Ostrowski ,  Yonghua Chen ,  Juren Ding

    IPC分类号： B44C1/22

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3932 ,  G11B5/3967

    摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.

    摘要翻译： 描述制造磁性装置的方法。 在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。 使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。 使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。 执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。 第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

    Magnetic Device Definition with Uniform Biasing Control
    2.
    发明申请
    Magnetic Device Definition with Uniform Biasing Control 有权
    具有均匀偏置控制的磁性装置定义

    公开(公告)号：US20110006033A1

    公开(公告)日：2011-01-13

    申请号：US12502180

    申请日：2009-07-13

    申请人： Xilin Peng ,  Stacey Wakeham ,  Yifan Zhang ,  Zhongyan Wang ,  Konstantin Nikolaev ,  Mark Henry Ostrowski ,  Yonghua Chen ,  Juren Ding

    发明人： Xilin Peng ,  Stacey Wakeham ,  Yifan Zhang ,  Zhongyan Wang ,  Konstantin Nikolaev ,  Mark Henry Ostrowski ,  Yonghua Chen ,  Juren Ding

    IPC分类号： B44C1/22

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3932 ,  G11B5/3967

    摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.

    摘要翻译： 描述制造磁性装置的方法。 在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。 使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。 使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。 执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。 第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

    MAGNETIC READ HEAD
    3.
    发明申请
    MAGNETIC READ HEAD 有权
    磁头阅读头

    公开(公告)号：US20110194213A1

    公开(公告)日：2011-08-11

    申请号：US12702045

    申请日：2010-02-08

    申请人： Kaizhong Gao ,  Xilin Peng ,  Zhongyan Wang ,  Yonghua Chen

    发明人： Kaizhong Gao ,  Xilin Peng ,  Zhongyan Wang ,  Yonghua Chen

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  G11B5/3912 ,  H01L43/08

    摘要： In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

    摘要翻译： 在一些示例中，包括包括磁存储介质的数据存储构件的系统，所述磁存储介质具有在至少一个数据轨道上对准的多个磁位域，其中各个磁位域之间的过渡边界限定了转变曲率。 该系统还可以包括磁读取头，其包括靠近第一和第二屏蔽层设置的第一屏蔽层，第二屏蔽层和读取传感器堆叠，其中磁性读取头感测多个 根据读取播放灵敏度功能的磁性位域。 在一些示例中，屏蔽层和读取传感器堆叠可以被配置为提供基本对应于各个磁性位域的形状的读取器重放灵敏度功能。

    Magnetic read head with a read function feature
    4.
    发明授权
    Magnetic read head with a read function feature 有权
    具有读功能功能的磁头读头

    公开(公告)号：US08896972B2

    公开(公告)日：2014-11-25

    申请号：US12702045

    申请日：2010-02-08

    申请人： Kaizhong Gao ,  Xilin Peng ,  Zhongyan Wang ,  Yonghua Chen

    发明人： Kaizhong Gao ,  Xilin Peng ,  Zhongyan Wang ,  Yonghua Chen

    IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/39 ,  H01L43/08

    CPC分类号： G11B5/398 ,  G11B5/3912 ,  H01L43/08

    摘要： In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

    摘要翻译： 在一些示例中，包括包括磁存储介质的数据存储构件的系统，所述磁存储介质具有在至少一个数据轨道上对准的多个磁位域，其中各个磁位域之间的过渡边界限定了转变曲率。 该系统还可以包括磁读取头，其包括靠近第一和第二屏蔽层设置的第一屏蔽层，第二屏蔽层和读取传感器堆叠，其中磁性读取头感测多个 根据读取播放灵敏度功能的磁性位域。 在一些示例中，屏蔽层和读取传感器堆叠可以被配置为提供基本对应于各个磁性位域的形状的读取器重放灵敏度功能。

    Method of Patterned Media Template Formation and Templates
    5.
    发明申请
    Method of Patterned Media Template Formation and Templates 审中-公开
    图案化媒体模板形成与模板方法

    公开(公告)号：US20100183957A1

    公开(公告)日：2010-07-22

    申请号：US12357296

    申请日：2009-01-21

    申请人： Zhongyan Wang ,  Thomas R. Boonstra ,  Mark H. Ostrowski ,  Alexandre V. Demtchouk ,  Xilin Peng ,  Kaizhong Gao

    发明人： Zhongyan Wang ,  Thomas R. Boonstra ,  Mark H. Ostrowski ,  Alexandre V. Demtchouk ,  Xilin Peng ,  Kaizhong Gao

    IPC分类号： G03F1/14

    CPC分类号： G11B5/82 ,  G11B5/743 ,  G11B5/855 ,  G11B5/865

    摘要： Aspects include methods to produce pattern media templates and the templates. A pattern of resist structures is formed on a first material layer. A conformal layer of a second material is deposited on the resist pattern, covering tops and side walls of the resist structures. The first material is more resistant to ion milling than the second material, and less resistant to plasma etching than the second material. The first material can be amorphous carbon and the second material can be aluminum oxide. The second material is removed on the tops, and preserved on the side walls. The resist structures and portions of the first layer not supporting second layer material are removed by plasma. The remaining structure is 2× denser than the resist pattern. Conformal deposition of second material and ion milling can be repeated. CMP removes the second material down to a portion of remaining first material, and remaining first material is removed by plasma, leaving a 4× denser pitch pattern structure formed from the second material.

    摘要翻译： 方面包括产生图案媒体模板和模板的方法。 抗蚀剂结构的图案形成在第一材料层上。 第二材料的保形层沉积在抗蚀剂图案上，覆盖抗蚀剂结构的顶部和侧壁。 第一种材料比第二种材料更耐离子研磨，并且比第二种材料对等离子体蚀刻的抗性更差。 第一种材料可以是无定形碳，第二种材料可以是氧化铝。 第二种材料在顶部被去除，并保留在侧壁上。 通过等离子体去除抗蚀剂结构和不支撑第二层材料的第一层的部分。 剩余结构比抗蚀剂图案更密集2倍。 可以重复第二种材料的保形沉积和离子研磨。 CMP将第二材料除去到剩余的第一材料的一部分，并且通过等离子体去除剩余的第一材料，留下由第二材料形成的4×更密的节距图案结构。

    MAGNETORESISTIVE READER WITH DEMAGNETIZATION FLUX GUIDE
    7.
    发明申请
    MAGNETORESISTIVE READER WITH DEMAGNETIZATION FLUX GUIDE 有权
    磁性读取器，带有去磁通道指南

    公开(公告)号：US20100328823A1

    公开(公告)日：2010-12-30

    申请号：US12491838

    申请日：2009-06-25

    申请人： Yonghua Chen ,  Jiaoming Qiu ,  Xilin Peng ,  Kaizhong Gao

    发明人： Yonghua Chen ,  Jiaoming Qiu ,  Xilin Peng ,  Kaizhong Gao

    IPC分类号： G11B5/127

    CPC分类号： G01R33/098 ,  G11B5/3912 ,  G11B5/3916 ,  G11B5/398 ,  H01L43/08

    摘要： A magnetic reader comprises first and second shields oriented transversely to a media-facing surface, a magnetoresistive stack located between the first and second shields, and a flux guide. The magnetoresistive stack extends from a proximal end oriented toward the media-facing surface to a distal end oriented away from the media-facing surface. The flux guide extends from the first shield toward the second shield, and is spaced from the magnetoresistive stack at the distal end. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

    摘要翻译： 磁读取器包括横向于介质表面的第一和第二屏蔽层，位于第一和第二屏蔽之间的磁阻堆叠以及磁通引导件。 磁阻堆叠从朝向面向介质的表面的近端延伸到远离面向介质的表面的远端。 磁通引导件从第一屏蔽件延伸到第二屏蔽件，并且在远端处与磁阻堆叠件间隔开。 磁通引导件将磁阻堆叠的远端磁耦合到第一屏蔽层。

    HARD MAGNET WITH CAP AND SEED LAYERS AND DATA STORAGE DEVICE READ/WRITE HEAD INCORPORATING THE SAME
    10.
    发明申请
    HARD MAGNET WITH CAP AND SEED LAYERS AND DATA STORAGE DEVICE READ/WRITE HEAD INCORPORATING THE SAME 有权
    具有盖和种子层的硬磁体和数据存储装置读/写头相同

    公开(公告)号：US20090274931A1

    公开(公告)日：2009-11-05

    申请号：US12112671

    申请日：2008-04-30

    申请人： Jiaoming Qiu ,  Yonghua Chen ,  Xilin Peng ,  Shaun McKinlay ,  Eric W. Singleton ,  Brian W. Karr

    发明人： Jiaoming Qiu ,  Yonghua Chen ,  Xilin Peng ,  Shaun McKinlay ,  Eric W. Singleton ,  Brian W. Karr

    IPC分类号： G11B5/733 ,  B05D5/12

    CPC分类号： H01F41/22 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3932 ,  H01F10/123 ,  H01F10/14 ,  H01F10/16 ,  H01F10/265 ,  Y10T428/1164

    摘要： A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer. The intermediate layer includes the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The first component is different than the second component. Additionally, a read/write head including the hard magnet.

    摘要翻译： 一种包括形成多层结构的方法。 多层结构包括种子层，其包含选自由Pt族金属，Fe，Mn，Ir和Co组成的组的第一组分。多层结构还包括包含第一组分和第二组分的中间层，所述第二组分选自 由Pt族金属，Fe，Mn，Ir，Co组成的第二成分与第一成分不同。 多层结构还包括包含第一部件的盖层。 该方法还包括将多层结构加热至退火温度以引起中间层的相变。 还有一种包括种子层的硬磁体，其包含选自由Pt族金属，Fe，Mn，Ir和Co组成的组的第一组分。硬磁体还包括包含第一组分的盖层。 硬磁体还包括种子层和盖层之间的中间层。 中间层包括第一组分和选自Pt族金属，Fe，Mn，Ir和Co的第二组分。第一组分不同于第二组分。 另外，包括硬磁体的读/写头。