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    Field assisted switching of a magnetic memory element
    1.
    发明授权
    Field assisted switching of a magnetic memory element 有权
    现场辅助切换磁存储元件

    公开(公告)号：US08422277B2

    公开(公告)日：2013-04-16

    申请号：US12939751

    申请日：2010-11-04

    申请人： Xin Cao ,  Haiwen Xi ,  Wenzhong Zhu ,  Robert Lamberton ,  Kaizhong Gao

    发明人： Xin Cao ,  Haiwen Xi ,  Wenzhong Zhu ,  Robert Lamberton ,  Kaizhong Gao

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    摘要： Method and apparatus for writing data to a magnetic memory element, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a magnetic memory element to initiate magnetic precession of the element to a desired magnetic state. A flow of a field assist current is subsequently initiated adjacent the magnetic memory element during continued application of the write current to induce a magnetic field upon the element. The field assist current persists after the write current is terminated to provide field assisted precession to the desired magnetic state.

    摘要翻译： 将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储单元之类的磁存储元件的方法和装置。 根据各种实施例，通过磁存储元件施加写入电流以启动元件的磁性进动到期望的磁状态。 随后在继续施加写入电流以引起元件上的磁场的同时在磁存储元件附近开始场辅助电流。 在写入电流终止之后，场辅助电流保持不变，以提供场辅助进动到期望的磁状态。

    Field Assisted Switching of a Magnetic Memory Element
    2.
    发明申请
    Field Assisted Switching of a Magnetic Memory Element 有权
    磁存储元件的场辅助切换

    公开(公告)号：US20120111952A1

    公开(公告)日：2012-05-10

    申请号：US12939751

    申请日：2010-11-04

    申请人： Xin Cao ,  Haiwen Xi ,  Wenzhong Zhu ,  Robert Lamberton ,  Kaizhong Gao

    发明人： Xin Cao ,  Haiwen Xi ,  Wenzhong Zhu ,  Robert Lamberton ,  Kaizhong Gao

    IPC分类号： G11C11/16 ,  G11C11/15 ,  G06K19/073

    CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    摘要： Method and apparatus for writing data to a magnetic memory element, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a magnetic memory element to initiate magnetic precession of the element to a desired magnetic state. A flow of a field assist current is subsequently initiated adjacent the magnetic memory element during continued application of the write current to induce a magnetic field upon the element. The field assist current persists after the write current is terminated to provide field assisted precession to the desired magnetic state.

    摘要翻译： 将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储单元之类的磁存储元件的方法和装置。 根据各种实施例，通过磁存储元件施加写入电流以启动元件的磁性进动到期望的磁状态。 随后在继续施加写入电流以引起元件上的磁场的同时在磁存储元件附近开始场辅助电流。 在写入电流终止之后，场辅助电流保持不变，以提供场辅助进动到期望的磁状态。

    STRAM with compensation element and method of making the same
    3.
    发明授权
    STRAM with compensation element and method of making the same 失效
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08508005B2

    公开(公告)日：2013-08-13

    申请号：US13477200

    申请日：2012-05-22

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L21/66 ,  G01R33/02 ,  G01C11/14

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    4.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20120248558A1

    公开(公告)日：2012-10-04

    申请号：US13477200

    申请日：2012-05-22

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L29/82

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    5.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 有权
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20110194343A1

    公开(公告)日：2011-08-11

    申请号：US13086613

    申请日：2011-04-14

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： G11C11/14 ,  G11B5/66

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM with compensation element and method of making the same
    6.
    发明授权
    STRAM with compensation element and method of making the same 有权
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08203192B2

    公开(公告)日：2012-06-19

    申请号：US13086613

    申请日：2011-04-14

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L21/66 ,  G01R33/02 ,  G11C11/14

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM with compensation element and method of making the same
    8.
    发明授权
    STRAM with compensation element and method of making the same 有权
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08053255B2

    公开(公告)日：2011-11-08

    申请号：US12396905

    申请日：2009-03-03

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： G01R21/00 ,  G01R33/02 ,  H01L21/66 ,  G11C11/14

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。