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公开(公告)号：US20050149902A1
公开(公告)日：2005-07-07
申请号：US10981750
申请日：2004-11-05
申请人： Xuelong Shi , Robert Socha , Thomas Laidig , Douglas Broeke
发明人： Xuelong Shi , Robert Socha , Thomas Laidig , Douglas Broeke
摘要： Model OPC is developed based on eigen decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen decomposition method the aerial image intensity distribution around a point (x, y) is accurately described in the model. A scalar approach may be used in the eigen decomposition model which treats the light wave through the mask as a scalar quantity. A eigen decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIF may be generated from the aerial image which may be used to verify the mask modeling process by comparing the predicted SPIF to an experimentally determined SPIF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.
摘要翻译： 基于通过抗蚀剂表面上的掩模图案预期产生的空间图像的特征分解开发OPC模型。 利用特征分解方法，在模型中准确描述了点（x，y）周围的空间图像强度分布。 在本征分解模型中可以使用标量法，其将通过掩模的光波视为标量。 本征分解可以使用向量来描述光波和瞳孔函数的矢量方法。 可以从空间图像生成预测的SPIF，其可以用于通过将预测的SPIF与实验确定的SPIF进行比较来验证掩模建模过程。 模型OPC，一旦校准，可以用于评估掩模的性能和细化掩模的特征。
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2.发明申请Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置公开(公告)号：US20050142449A1
公开(公告)日：2005-06-30
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
发明人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G06F17/50 , H01L21/027
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。
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公开(公告)号：US20050142470A1
公开(公告)日：2005-06-30
申请号：US10975342
申请日：2004-10-29
申请人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
发明人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125
摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
摘要翻译： 公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。 步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧 裂片不打印。
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公开(公告)号：US07820341B2
公开(公告)日：2010-10-26
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译： 一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。 该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。
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公开(公告)号：US20070117030A1
公开(公告)日：2007-05-24
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
发明人： Thomas Laidig , Jang Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt Wampler
IPC分类号： G03F1/00
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译： 一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。 该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。
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6.发明申请Method for performing full-chip manufacturing reliability checking and correction 有权执行全芯片制造可靠性检查和校正的方法公开(公告)号：US20060080633A1
公开(公告)日：2006-04-13
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译： 一种生成用于成像处理模式的掩模的方法。 该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。
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7.发明授权Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置公开(公告)号：US07550235B2
公开(公告)日：2009-06-23
申请号：US10933496
申请日：2004-09-03
IPC分类号： G03F1/02
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。
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8.发明授权Method for performing full-chip manufacturing reliability checking and correction 有权执行全芯片制造可靠性检查和校正的方法公开(公告)号：US07434195B2
公开(公告)日：2008-10-07
申请号：US11225888
申请日：2005-09-14
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译： 一种生成用于成像处理模式的掩模的方法。 该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。
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公开(公告)号：US07398508B2
公开(公告)日：2008-07-08
申请号：US10981750
申请日：2004-11-05
IPC分类号： G06F17/50
摘要： Model OPC is developed based on eigen decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen decomposition method the aerial image intensity distribution around a point (x, y) is accurately described in the model. A scalar approach may be used in the eigen decomposition model which treats the light wave through the mask as a scalar quantity. A eigen decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIF may be generated from the aerial image which may be used to verify the mask modeling process by comparing the predicted SPIF to an experimentally determined SPIF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.
摘要翻译： 基于通过抗蚀剂表面上的掩模图案预期产生的空间图像的特征分解开发OPC模型。 利用特征分解方法，在模型中准确描述了点（x，y）周围的空间图像强度分布。 在本征分解模型中可以使用标量法，其将通过掩模的光波视为标量。 本征分解可以使用向量来描述光波和瞳孔函数的矢量方法。 可以从空间图像生成预测的SPIF，其可以用于通过将预测的SPIF与实验确定的SPIF进行比较来验证掩模建模过程。 模型OPC，一旦校准，可以用于评估掩模的性能和细化掩模的特征。
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公开(公告)号：US07175940B2
公开(公告)日：2007-02-13
申请号：US10266922
申请日：2002-10-09
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
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