公开(公告)号：US20160224255A1

公开(公告)日：2016-08-04

申请号：US15000065

申请日：2016-01-19

申请人： YOUNG-HO PARK ,  CHAN-IK PARK ,  CHUL LEE ,  IN-HWAN DOH ,  NAM-WOOK KANG ,  KWANG-HUN LEE ,  IN-SUNG SONG

发明人： YOUNG-HO PARK ,  CHAN-IK PARK ,  CHUL LEE ,  IN-HWAN DOH ,  NAM-WOOK KANG ,  KWANG-HUN LEE ,  IN-SUNG SONG

IPC分类号： G06F3/06

CPC分类号： G06F3/0611 ,  G06F3/0659 ,  G06F3/0679

摘要： A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.

摘要翻译： 一种处理存储装置中的输入/输出（I / O）的方法包括：根据与存储装置的操作相关的资源管理状态的改变来调整读预期时间，并在存储装置处执行I / O处理操作 基于调整后的预期时间。 执行I / O处理操作以在从存储装置的读取操作完成直到读取预期时间的时间段内推迟关于程序命令的操作并且执行比存储装置处的写入命令更高优先级的读取命令 已经过去了

公开(公告)号：US20160180942A1

公开(公告)日：2016-06-23

申请号：US14674334

申请日：2015-03-31

申请人： CHUL LEE ,  NAM WOOK KANG ,  IN HWAN DOH ,  CHANIK PARK

发明人： CHUL LEE ,  NAM WOOK KANG ,  IN HWAN DOH ,  CHANIK PARK

IPC分类号： G11C16/16 ,  G11C16/26

CPC分类号： G11C16/16 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C16/349

摘要： A method of operating a storage device includes; counting a number of fast cycles for the memory block when a program interval between two successive program operations directed to memory cells of the memory block is less than a minimal program interval, and/or when an erase interval between two successive erase operations directed to the memory block is less than a minimal erase interval, and selecting the memory block to be erased by an erase operation or selecting memory cells of the memory block to be programmed by a program operation in response to the counted number of fast cycles for the memory block.

摘要翻译： 操作存储设备的方法包括： 当针对存储器块的存储器单元的两个连续程序操作之间的程序间隔小于最小程序间隔时，和/或当两个连续擦除操作之间的擦除间隔指向 存储器块小于最小擦除间隔，并且通过擦除操作来选择要擦除的存储器块，或者响应于计数的存储器块的快速周期数，选择要由编程操作编程的存储器块的存储器单元 。

公开(公告)号：US20120311241A1

公开(公告)日：2012-12-06

申请号：US13484337

申请日：2012-05-31

申请人： CHUL LEE

发明人： CHUL LEE

IPC分类号： G06F12/00

CPC分类号： G06F13/18 ,  G06F12/0607 ,  G06F13/16 ,  G06F13/1642 ,  G06F13/1668

摘要： A scheduler controls execution in a memory of operation requests received in an input request set (IRS) by providing a corresponding output request set (ORS). The scheduler includes zone standby units having a one-to-one relationship with corresponding zones such that each zone standby unit stores an operation request. The scheduler also includes an output processing unit that determines a processing sequence for the operation requests stored in the zone standby units to provide the ORS.

摘要翻译： 调度器通过提供对应的输出请求集（ORS）来控制在输入请求集（IRS）中接收的操作请求的存储器中的执行。 调度器包括与相应区域具有一对一关系的区域备用单元，使得每个区域备用单元存储操作请求。 调度器还包括输出处理单元，其确定存储在区域备用单元中的操作请求的处理顺序以提供ORS。

公开(公告)号：US20130080686A1

公开(公告)日：2013-03-28

申请号：US13556243

申请日：2012-07-24

申请人： JOO-YOUNG HWANG ,  CHUL LEE

发明人： JOO-YOUNG HWANG ,  CHUL LEE

IPC分类号： G06F12/02

CPC分类号： G06F12/0292 ,  G06F12/10 ,  G06F2212/205

摘要： A method of managing data in a system comprising a nonvolatile memory comprises storing a root object of application data, and at least one sub object referenced by the root object in the nonvolatile memory, and mapping virtual addresses of the root object and sub object to physical addresses of the nonvolatile memory respectively, in a page unit. The root object stored in the nonvolatile memory comprises a pointer that references the sub object stored in the nonvolatile memory.

摘要翻译： 一种在包括非易失性存储器的系统中管理数据的方法，包括将应用数据的根对象以及由根对象引用的至少一个子对象存储在非易失性存储器中，并将根对象和子对象的虚拟地址映射到物理 分别在页面单元中的非易失性存储器的地址。 存储在非易失性存储器中的根对象包括引用存储在非易失性存储器中的子对象的指针。

公开(公告)号：US20110210421A1

公开(公告)日：2011-09-01

申请号：US13021333

申请日：2011-02-04

申请人： CHUL LEE ,  Hyeong-Sun Hong ,  Deok-Sung Hwang ,  Jae-Man Yoon ,  Bong-Soo Kim

发明人： CHUL LEE ,  Hyeong-Sun Hong ,  Deok-Sung Hwang ,  Jae-Man Yoon ,  Bong-Soo Kim

IPC分类号： H01L29/92

CPC分类号： H01L29/92

摘要： Provided is a trench-type capacitor. To form the capacitor, first and second active regions are disposed in a semiconductor substrate. Node patterns are disposed in the first active region. Each node pattern may have a conductive pattern and an insulating pattern, which are sequentially stacked. Impurity diffusion regions are disposed in the vicinity of the node patterns. Substrate connection patterns in electrical contact with the first and second active regions are disposed. Node connection patterns in electrical contact with the node patterns are disposed in the vicinity of the first and second active regions. In addition, a semiconductor device having the trench-type capacitor and a semiconductor module having the semiconductor device is provided.

摘要翻译： 提供了沟槽型电容器。 为了形成电容器，第一和第二有源区域设置在半导体衬底中。 节点图案设置在第一活动区域中。 每个节点图案可以具有顺序堆叠的导电图案和绝缘图案。 杂质扩散区域设置在节点图案附近。 设置与第一和第二有源区电接触的衬底连接图案。 与节点图案电接触的节点连接图案设置在第一和第二活动区域附近。 此外，提供具有沟槽型电容器的半导体器件和具有半导体器件的半导体模块。