公开(公告)号：US20080296579A1

公开(公告)日：2008-12-04

申请号：US12128465

申请日：2008-05-28

申请人： YUKINOBU MURAO ,  AKIRA KUMAGAI ,  YOICHIRO NUMASAWA

发明人： YUKINOBU MURAO ,  AKIRA KUMAGAI ,  YOICHIRO NUMASAWA

IPC分类号： H01L29/04 ,  H01L21/205

CPC分类号： H01L27/1203 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/84 ,  H01L29/04 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  Y10S977/89 ,  Y10S977/936

摘要： This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.

摘要翻译： 本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。 在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。 在第一纳米硅膜上形成氮化硅膜。 然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。 在这样制造的纳米硅半导体衬底上形成半导体电路器件。