公开(公告)号：US06511048B1

公开(公告)日：2003-01-28

申请号：US09191383

申请日：1998-11-13

申请人： Yasunari Sohda ,  Yasuhiro Someda ,  Hiroya Ohta ,  Takashi Matsuzaka ,  Norio Saitou ,  Yoshinori Nakayama

发明人： Yasunari Sohda ,  Yasuhiro Someda ,  Hiroya Ohta ,  Takashi Matsuzaka ,  Norio Saitou ,  Yoshinori Nakayama

IPC分类号： H01J3730

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.

摘要翻译： 一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。 具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。 示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。 这允许在每个孔径组中精确地写入外围定位的图形。

公开(公告)号：US07425714B2

公开(公告)日：2008-09-16

申请号：US11207710

申请日：2005-08-22

申请人： Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

发明人： Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

IPC分类号： G21K5/10

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R19/0061 ,  H01J37/243 ,  H01J2237/30472

摘要： A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.

摘要翻译： 提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。 通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。 在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。 此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。

公开(公告)号：US20060060775A1

公开(公告)日：2006-03-23

申请号：US11207710

申请日：2005-08-22

申请人： Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

发明人： Makoto Sakakibara ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Yasunari Sohda ,  Noriyuki Tanaka ,  Yasuhiro Someda

IPC分类号： G01N23/00

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R19/0061 ,  H01J37/243 ,  H01J2237/30472

摘要： A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.

摘要翻译： 提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。 通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。 在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。 此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。

公开(公告)号：US06768118B2

公开(公告)日：2004-07-27

申请号：US10350188

申请日：2003-01-24

申请人： Yoshinori Nakayama ,  Yasunari Sohda ,  Hiroya Ohta ,  Norio Saitou ,  Masato Muraki ,  Masaki Takakuwa

发明人： Yoshinori Nakayama ,  Yasunari Sohda ,  Hiroya Ohta ,  Norio Saitou ,  Masato Muraki ,  Masaki Takakuwa

IPC分类号： H01J326

CPC分类号： H01J37/244 ,  H01J2237/24405 ,  H01J2237/31774

摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.

摘要翻译： 本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属 使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。 微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

公开(公告)号：US06667486B2

公开(公告)日：2003-12-23

申请号：US10219769

申请日：2002-08-16

申请人： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

发明人： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

IPC分类号： H01J3708

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/3177

摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.

摘要翻译： 本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。 在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使 由多个电子束中的每一个形成的图案的图案数据的位置。

公开(公告)号：US20070164458A1

公开(公告)日：2007-07-19

申请号：US11623776

申请日：2007-01-17

申请人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

发明人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

IPC分类号： H01L23/544 ,  H01L21/47

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7076 ,  G11B5/855 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.

摘要翻译： 在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。 此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

公开(公告)号：US20060197453A1

公开(公告)日：2006-09-07

申请号：US11355952

申请日：2006-02-17

申请人： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

发明人： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

IPC分类号： H01K1/62

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/3045

摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

摘要翻译： 提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过 提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便 基于检测结果校正电子束的位置或偏转量。

公开(公告)号：US08268209B2

公开(公告)日：2012-09-18

申请号：US11623776

申请日：2007-01-17

申请人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

发明人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

IPC分类号： H01L23/544

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7076 ,  G11B5/855 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.

摘要翻译： 在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。 此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

公开(公告)号：US07423274B2

公开(公告)日：2008-09-09

申请号：US11355952

申请日：2006-02-17

申请人： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

发明人： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

IPC分类号： A61N5/00

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/3045

摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

摘要翻译： 提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过 提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便 基于检测结果校正电子束的位置或偏转量。

公开(公告)号：US20060011869A1

公开(公告)日：2006-01-19

申请号：US11180629

申请日：2005-07-14

申请人： Noriyuki Tanaka ,  Ken Iizumi ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasuhiro Someda

发明人： Noriyuki Tanaka ,  Ken Iizumi ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasuhiro Someda

IPC分类号： G21G5/00 ,  G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J2237/30472

摘要： In an electron-beam lithography system for performing a pattern drawing by causing electron beams to be switched ON/OFF at a high speed in an exposure/non-exposure portion, non-straight line property of beam shot dosage relative to beam ON time worsens dimension accuracy of the drawing pattern formed on a sample. In order to avoid this drawback, the characteristic of the beam shot dosage relative to the beam ON time is measured in advance, thereby creating correction data for the beam ON time beforehand. Then, at the time of performing the pattern drawing, the beam ON time is corrected based on the correction data so that desired beam shot dosage becomes acquirable.

摘要翻译： 在曝光/非曝光部分中通过使电子束以高速切换ON / OFF进行图形绘制的电子束光刻系统中，射束投射量相对于光束ON时间的非直线特性恶化 在样品上形成的绘图图形的尺寸精度。 为了避免这种缺点，预先测定射束投射量相对于光束导通时间的特性，从而事先产生光束接通时间的校正数据。 然后，在执行图形绘制时，基于校正数据校正光束接通时间，使得期望的射束剂量变得可获得。