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    SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体元件及其制造方法

    公开(公告)号：US20110101354A1

    公开(公告)日：2011-05-05

    申请号：US12864461

    申请日：2009-01-08

    申请人： Yuichi Saito ,  Masao Moriguchi ,  Akihiro Kohno

    发明人： Yuichi Saito ,  Masao Moriguchi ,  Akihiro Kohno

    IPC分类号： H01L33/16 ,  H01L21/336

    CPC分类号： H01L29/78669 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78678

    摘要： A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1, the active layer 4 including a channel region 4c and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; a first contact layer 6a and a second contact layer 6b which are respectively in contact with the first region 4a and the second region 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 which is provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The oxygen-containing silicon layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.

    摘要翻译： 半导体器件101包括：衬底1; 设置在基板1上的有源层4，有源层4包括分别位于沟道区域4c的相对侧上的沟道区域4c和第一区域4a和第二区域4b; 分别与有源层4的第一区域4a和第二区域4b接触的第一接触层6a和第二接触层6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅极电极2和有源层4之间，栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a，6b之间的含氧硅层5。 含氧硅层5含有浓度高于有源层4和第一和第二接触层6a，6b的氧。

    Connector
    8.
    发明授权
    Connector 有权
    连接器

    公开(公告)号：US07731532B2

    公开(公告)日：2010-06-08

    申请号：US10585544

    申请日：2005-06-17

    申请人： Toshio Masumoto ,  Yuichi Saito

    发明人： Toshio Masumoto ,  Yuichi Saito

    IPC分类号： H01R13/648

    CPC分类号： H01R13/648 ,  H01R12/724 ,  H01R13/658 ,  H01R13/73 ,  H01R13/748

    摘要： A connector, comprising a connector body (11) having a flange (19), a shell (17) forming a contour part, and a reinforcement member (53). The reinforcement member (53) further comprises a reinforcement part (67) in contact with the flange (19) in which screw holes (57) are formed and an engagement part (65) engaged with the shell (17). The reinforcement member (53) is detachably fitted to the connector body (11).

    摘要翻译： 一种连接器，包括具有凸缘（19）的连接器主体（11），形成轮廓部分的壳体（17）和加强构件（53）。 加强构件（53）还包括与其中形成有螺纹孔（57）的凸缘（19）接触的加强部分（67）和与壳体（17）接合的接合部分（65）。 加强构件（53）可拆卸地装配到连接器主体（11）上。

    Small-sized electrical connector easily improved in EMI characteristics
    10.
    发明授权
    Small-sized electrical connector easily improved in EMI characteristics 有权
    小型电连接器容易改善EMI特性

    公开(公告)号：US07438595B2

    公开(公告)日：2008-10-21

    申请号：US11543376

    申请日：2006-10-05

    申请人： Yuichi Saito

    发明人： Yuichi Saito

    IPC分类号： H01R13/648

    CPC分类号： H01R13/6271 ,  H01R13/6582

    摘要： In an electrical connector to be connected to a mating connector having a locking portion for locking a connected state between the electrical connector and the mating connector, a conductive shell includes a recessed portion adapted to be engaged with the locking portion in the connected state. The recessed portion has a bottom adapted to come into contact with the locking portion in the connected state. The conductive shell is coupled to a housing holding a contact.

    摘要翻译： 在要连接到具有用于锁定电连接器和匹配连接器之间的连接状态的锁定部分的配合连接器的电连接器中，导电壳体包括适于在连接状态下与锁定部分接合的凹部。 凹部具有适于在连接状态下与锁定部接触的底部。 导电壳体与保持接触件的壳体联接。