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    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
    1.
    发明申请
    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
    半导体激光器件，半导体激光器模块和光纤放大器

    公开(公告)号：US20050105845A1

    公开(公告)日：2005-05-19

    申请号：US11020320

    申请日：2004-12-27

    申请人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    发明人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    IPC分类号： H01S3/06 ,  G02B6/28 ,  H01S3/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01S5/20 ,  H01S5/2004

    摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

    摘要翻译： 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。

    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
    2.
    发明授权
    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
    半导体激光器件，半导体激光器模块和光纤放大器

    公开(公告)号：US07203215B2

    公开(公告)日：2007-04-10

    申请号：US11020320

    申请日：2004-12-27

    申请人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    发明人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  H01S5/2004

    摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

    摘要翻译： 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06795480B1

    公开(公告)日：2004-09-21

    申请号：US09662704

    申请日：2000-09-15

    申请人： Shusuke Kaya ,  Takao Ninomiya ,  Michio Okubo ,  Seiji Uchiyama

    发明人： Shusuke Kaya ,  Takao Ninomiya ,  Michio Okubo ,  Seiji Uchiyama

    IPC分类号： H01S308

    CPC分类号： H01S5/028

    摘要： A semiconductor laser device is formed by laminating optical confinement layers and active layers so as to dispose each of said active layers between said optical confinement layers, wherein one of the opposite ends perpendicular to the junction planes of the individual layers in the semiconductor multi-layer film is coated with a low reflection film and the other of the ends is coated with a high reflection film, wherein the low reflection film is an Al2O3 film having a resistivity of 1×1012 &OHgr;·m or more, preferably 1×1013 &OHgr;·m or more, and having a stoichiometric ratio composition, which is deposited by, for example, an electron cyclotron resonance sputtering process. The present invention has realized a semiconductor laser device exhibiting a prolonged duration of operating life and having high driving reliability, which is advantageous in that a catastrophic optical damage hardly occurs and a lowering of the optical output after driving at a constant current is suppressed, and thus, it is preferably used as an optical transmitter for the optical communication.

    摘要翻译： 通过层叠光学限制层和有源层来形成半导体激光器件，以将每个所述有源层设置在所述光限制层之间，其中相对端中的一个垂直于半导体多层中的各个层的结面 薄膜涂覆有低反射膜，另一端涂覆有高反射膜，其中低反射膜是电阻率为1×10 12Ω·m或更大，优选1×10 13的Al 2 O 3膜。 Ωm以上，并且具有通过例如电子回旋共振溅射法沉积的化学计量比组成。 本发明实现了延长使用寿命并具有高驱动可靠性的半导体激光器件，其优点在于几乎不发生灾难性的光学损伤，并且抑制了以恒定电流驱动后的光输出的降低，以及 因此，优选用作光通信的光发射机。