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    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
    1.
    发明申请
    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
    半导体激光器件，半导体激光器模块和光纤放大器

    公开(公告)号：US20050105845A1

    公开(公告)日：2005-05-19

    申请号：US11020320

    申请日：2004-12-27

    申请人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    发明人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    IPC分类号： H01S3/06 ,  G02B6/28 ,  H01S3/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01S5/20 ,  H01S5/2004

    摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

    摘要翻译： 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。

    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
    2.
    发明授权
    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
    半导体激光器件，半导体激光器模块和光纤放大器

    公开(公告)号：US07203215B2

    公开(公告)日：2007-04-10

    申请号：US11020320

    申请日：2004-12-27

    申请人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    发明人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  H01S5/2004

    摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

    摘要翻译： 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。

    Semiconductor laser apparatus
    3.
    发明授权
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US06546032B1

    公开(公告)日：2003-04-08

    申请号：US09644080

    申请日：2000-08-23

    申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

    摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

    摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

    Semiconductor laser light source and solid-state laser apparatus
    4.
    发明授权
    Semiconductor laser light source and solid-state laser apparatus 失效
    半导体激光光源和固态激光装置

    公开(公告)号：US6104741A

    公开(公告)日：2000-08-15

    申请号：US49076

    申请日：1998-03-27

    申请人： Kouichi Igarashi ,  Yasuo Oeda ,  Kiyofumi Muro

    发明人： Kouichi Igarashi ,  Yasuo Oeda ,  Kiyofumi Muro

    IPC分类号： G02B6/42 ,  G02B27/10 ,  G02B27/42 ,  H01S3/00 ,  H01S5/00 ,  H01S5/40 ,  H01S3/091 ,  G02B6/00 ,  G02B6/32 ,  G02B6/34

    CPC分类号： G02B27/12 ,  G02B19/0014 ,  G02B19/0057 ,  G02B27/123 ,  G02B6/425 ,  G02B6/4206 ,  H01S3/005 ,  H01S5/005 ,  H01S5/4031

    摘要： A semiconductor laser light source includes: a semiconductor laser array which emits laser beams whose polarization planes are parallel to each other and whose divergent angles .theta.z and .theta.x in two orthogonal directions satisfy an inequality .theta.z>.theta.x; a cylindrical lens which converges the laser beams emitted from the semiconductor laser array in a direction that decreases the divergent angle .theta.z; a wave plate which controls the direction of polarization so that the polarization planes of the laser beams having passed through the cylindrical lens are at 90 degrees to each other; a birefringent optical element which merges by the birefringent effect the optical paths of the laser beams having passed through the wave plate; and a light emitting surface which converges the laser beams merged by the birefringent optical element in a direction that decreases the divergent angle .theta.x.Thus, the efficiency of merging the laser beams and the efficiency of joining the laser beams to the succeeding optical system can be greatly improved.

    摘要翻译： 半导体激光源包括：发射激光束的半导体激光器阵列，其偏振面彼此平行，并且其两个正交方向上的发散角θz和θx满足不等式θz>θx; 柱面透镜，其使从半导体激光器阵列发射的激光束沿减小发散角θz的方向会聚; 控制偏振方向的波片，使得通过柱面透镜的激光束的偏振面相互成90度; 双折射光学元件，其通过双折射效应合并已经通过波片的激光束的光路; 以及会聚由双折射光学元件合流的激光束沿着减小发散角θx的方向会聚的发光面。 因此，可以大大提高合并激光束的效率和将激光束接合到后续光学系统的效率。

    Semiconductor laser device
    9.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06717186B2

    公开(公告)日：2004-04-06

    申请号：US10230988

    申请日：2002-08-30

    申请人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    发明人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    IPC分类号： H01L3300

    CPC分类号： H01S5/2231 ,  H01S5/2077 ,  H01S5/222

    摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.

    摘要翻译： 实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。 在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

    Semiconductor laser device
    10.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US6118799A

    公开(公告)日：2000-09-12

    申请号：US817602

    申请日：1997-06-10

    申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

    摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

    摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。