摘要:
A CMOS logical circuit comprises two electric current paths each of which has circuits consisting of n-type and p-type transistors. In a circuit consisting of n-type or p-type transistors, one electric current path is provided with a circuit having the same construction as that of a circuit having an n-type transistor of a CMOS logical circuit outputting a logical operation result similar to that of this logical circuit, and the other electric current path is provided with a circuit having the same construction as that of a circuit having a p-type transistor of the CMOS logical circuit outputting a logical operation result similar to that of this logical circuit. In another circuit consisting of the other channel type, a gate electrode of the transistor provided on the one electric current path and that of the transistor provided on the other electric current path are connected to drain electrodes of the counterparts. According to the construction, the amplitude of an input signal can be made smaller than a supply voltage of the logical circuit.
摘要:
A CMOS logical circuit comprises two electric current paths each of which has circuits consisting of n-type and p-type transistors. In a circuit consisting of n-type or p-type transistors, one electric current path is provided with a circuit having the same construction as that of a circuit having an n-type transistor of a CMOS logical circuit outputting a logical operation result similar to that of this logical circuit, and the other electric current path is provided with a circuit having the same construction as that of a circuit having a p-type transistor of the CMOS logical circuit outputting a logical operation result similar to that of this logical circuit. In another circuit consisting of the other channel type, a gate electrode of the transistor provided on the one electric current path and that of the transistor provided on the other electric current path are connected to drain electrodes of the counterparts. According to the construction, the amplitude of an input signal can be made smaller than a supply voltage of the logical circuit.
摘要:
If a clock signal ck is “H” and an input pulse signal in (first control signal) is “H”, then n-type transistors M15 and M16 are turned on to make an output node/OUT have the GND level. Then, a p-type transistor M12 is turned on to make an output node OUT have a Vcc (16 V) level. Thus, a latch circuit LAT operates as a level shifter circuit when first and second control signals and the clock signal ck are at “H” and operates as a level hold circuit in any other case. Therefore, the shift register circuit constructed of the latch circuit LAT functions as a low-voltage interface, and the input of the clock signal ck is stopped when the latch circuit LAT is inactive, so that the load and the consumption of power of the clock signal line are reduced.
摘要:
A CMOS logical circuit comprises two electric current paths each of which has circuits consisting of n-type and p-type transistors. In a circuit consisting of n-type or p-type transistors, one electric current path is provided with a circuit having the same construction as that of a circuit having an n-type transistor of a CMOS logical circuit outputting a logical operation result similar to that of this logical circuit, and the other electric current path is provided with a circuit having the same construction as that of a circuit having a p-type transistor of the CMOS logical circuit outputting a logical operation result similar to that of this logical circuit. In another circuit consisting of the other channel type, a gate electrode of the transistor provided on the one electric current path and that of the transistor provided on the other electric current path are connected to drain electrodes of the counterparts. According to the construction, the amplitude of an input signal can be made smaller than a supply voltage of the logical circuit.
摘要:
A matrix-type image display device of the present invention is arranged such that image data are selectively applied to pixels arranged in a matrix form through scanning signal lines and data signal lines, and the image data are stored therein, wherein a high potential of a sampling pulse 0V/5V to be output from a logic circuit is shifted to 10 V, and a low potential thereof is shifted to -8 V respectively by first and second level shifters. As a result, a difference between an input signal level from an external circuit such as a control circuit, an image signal processing circuit, etc., and an actual driving signal level of each pixel can be absorbed. Therefore, an additional structure such as an interface circuit, etc., is not needed between the external circuit and the scanning signal line driving circuit, thereby enabling a low cost and a low power consumption.
摘要:
Picture elements and driving circuits for driving respective picture elements are monolithically formed on an insulating substrate. A protective circuit is provided for allowing input-output terminals of a driving circuit to conduct when a potential difference of not less than a predetermined value is generated. The protective circuit includes an MOS transistor, and a turn-on voltage thereof is set according to a thickness of a gate insulating layer. The protective circuit is formed on the insulating substrate simultaneously when forming the driving circuits. In this arrangement, because the turn-on voltage is set according to the thickness of the gate insulating layer and the thickness can be easily adjusted, an accurate turn-on voltage can be achieved. Since the arrangement prevents an increase in manufacturing cost, the driving circuits, etc., can be surely protected against static electricity generated in the manufacturing process and the input surge in the normal operation.
摘要:
A semiconductor device includes a first conductive layer; an interlayer insulative layer having an opening; and a second conductive layer. The first conductive layer, the interlayer insulative layer and the second conductive layer are sequentially laminated. The opening is partially covered by the second conductive layer, and an area of the first conductive layer is substantially entirely covered by the second conductive layer in the opening.
摘要:
A matrix-type image display device of the present invention is arranged such that image data are selectively applied to pixels arranged in a matrix form through scanning signal lines and data signal lines, and the image data are stored therein, wherein a high potential of a sampling pulse 0V/5V to be output from a logic circuit is shifted to 10 V, and a low potential thereof is shifted to −8 V respectively by first and second level shifters. As a result, a difference between an input signal level from an external circuit such as a control circuit, an image signal processing circuit, etc., and an actual driving signal level of each pixel can be absorbed. Therefore, an additional structure such as an interface circuit, etc., is not needed between the external circuit and the scanning signal line driving circuit, thereby enabling a low cost and a low power consumption.
摘要:
The present invention aims to provide a monolithic driver-type display device capable of reducing circuit scale of a sampling circuit, and keeping low power consumption by directly driving a source driver with an externally provided video signal.In the monolithic driver-type display device having a display portion for displaying video and circuits for driving the display portion formed on the same insulating substrate, a plurality of sampling switches are provided in association with a plurality of pieces of bit data contained in externally inputted digital video signals. The sampling switches are opened/closed based on sampling signals, thereby sampling the digital video signals for each piece of the bit data and converting the signals into parallel format for output to data lines. The outputted digital video signals charge parasitic capacitances on the data lines and are held therein.
摘要:
A display device includes a photosensor (81) in a pixel region (1) of an active matrix substrate (100). The photosensor (81) includes a photodetection element, reset signal wiring that supplies a reset signal RS to the photosensor (81), readout signal wiring that supplies a readout signal RW to the photosensor (81), and a sensor switching element for reading out the potential of the storage node to output wiring as sensor circuit output, the potential of the storage node having changed in accordance with the amount of light received by the photodetection element in a sensing period, the sensing period being from when the reset signal is supplied until when the readout signal is supplied. The potential of wiring having a parasitic capacitance with the storage node is fixed to a predetermined potential V0 at least either one of immediately before the readout signal RW and immediately before the reset signal RS.