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    Single crystal heat treatment method
    1.
    发明授权
    Single crystal heat treatment method 有权

    公开(公告)号：US07531036B2

    公开(公告)日：2009-05-12

    申请号：US11374435

    申请日：2006-03-14

    申请人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    发明人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    IPC分类号： C30B15/14 ,  C30B21/06

    CPC分类号： C30B29/34 ,  C30B31/08 ,  Y10S117/906

    摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

    Single crystal heat treatment method
    3.
    发明申请
    Single crystal heat treatment method 有权

    公开(公告)号：US20060266276A1

    公开(公告)日：2006-11-30

    申请号：US11374435

    申请日：2006-03-14

    申请人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    发明人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    IPC分类号： C30B15/00 ,  C30B27/02 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/34 ,  C30B31/08 ,  Y10S117/906

    摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2-(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

    Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystal
    6.
    发明授权
    Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystal 有权
    闪烁体单晶，闪烁体单晶的热处理方法及闪烁体单晶的制造方法

    公开(公告)号：US08999281B2

    公开(公告)日：2015-04-07

    申请号：US12130179

    申请日：2008-05-30

    申请人： Yasushi Kurata ,  Naoaki Shimura ,  Tatsuya Usui

    发明人： Yasushi Kurata ,  Naoaki Shimura ,  Tatsuya Usui

    IPC分类号： C01F17/00 ,  C30B29/22 ,  C30B15/00 ,  C30B33/02 ,  C09K11/77

    CPC分类号： C30B29/22 ,  C01F17/00 ,  C09K11/7774 ,  C30B15/00 ,  C30B33/02

    摘要： The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot. Lm2−(x+y+z)LnxLuyCezSiO5  (1) (Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.).

    摘要翻译： 本发明的闪烁体单晶包含由以下通式（1）表示的铈活化的原硅酸盐化合物。 本发明的闪烁体单晶通过降低晶锭中的元素之间的偏析来显示改善的闪烁特性。 Lm2-（x + y + z）LnxLuyCezSiO5（1）（其中Lm表示选自Sc和Y中的至少一种元素，原子序数低于Lu的镧系元素，Ln表示选自Sc，Y， B，Al，Ga和In以及离子半径在Lm和Lu之间的镧系元素，x表示大于零且不大于0.5的值，y表示大于1且小于2的值，z表示 值大于零且不大于0.1）。

    SCINTILLATOR SINGLE CRYSTAL, HEAT TREATMENT PROCESS FOR PRODUCTION OF SCINTILLATOR SINGLE CRYSTAL, AND PROCESS FOR PRODUCTION OF SCINTILLATOR SINGLE CRYSTAL
    7.
    发明申请
    SCINTILLATOR SINGLE CRYSTAL, HEAT TREATMENT PROCESS FOR PRODUCTION OF SCINTILLATOR SINGLE CRYSTAL, AND PROCESS FOR PRODUCTION OF SCINTILLATOR SINGLE CRYSTAL 审中-公开
    单晶晶体，单晶晶片生产热处理工艺，单晶晶片生产工艺

    公开(公告)号：US20100327227A1

    公开(公告)日：2010-12-30

    申请号：US12822679

    申请日：2010-06-24

    申请人： Yasushi Kurata ,  Tatsuya Usui ,  Naoaki Shimura

    发明人： Yasushi Kurata ,  Tatsuya Usui ,  Naoaki Shimura

    IPC分类号： C09K11/79

    CPC分类号： C09K11/7792 ,  C30B15/00 ,  C30B29/34 ,  C30B33/02

    摘要： The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following formula (1). Gd2−(a+x+y+z)LnaLuxCeyLmzSiO5  (1) (In formula (1), Lm represents at least one element selected from among Pr, Tb and Tm, Ln represents at least one element selected from among lanthanoid elements excluding Pr, Tb and Tm, and Sc, and Y, a represents a value of at least 0 and less than 1, x represents a value of greater than 1 and less than 2, y represents a value of greater than 0 and no greater than 0.01, and z represents a value of greater than 0 and no greater than 0.01. The value of a+x+y+z is no greater than 2.)

    摘要翻译： 本发明的闪烁体单晶包含由下式（1）表示的铈活化的原硅酸盐化合物。 Gd 2 - （a + x + y + z）LnaLuxCeyLmzSiO5（1）（式（1）中，Lm表示选自Pr，Tb和Tm中的至少一种元素，Ln表示选自除Pr之外的镧系元素中的至少一种元素 ，Tb和Tm，Sc和Y，a表示至少为0且小于1的值，x表示大于1且小于2的值，y表示大于0且不大于0.01的值 ，z表示大于0且不大于0.01的值，a + x + y + z的值不大于2.）

    Single crystal heat treatment method
    8.
    发明申请
    Single crystal heat treatment method 有权
    单晶热处理方法

    公开(公告)号：US20060266277A1

    公开(公告)日：2006-11-30

    申请号：US11374436

    申请日：2006-03-14

    申请人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

    发明人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B30/04 ,  C30B28/10

    CPC分类号： C30B31/08 ,  C30B29/34

    摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1

    摘要翻译： 一种单晶热处理方法，其特征在于，在不饱和的氧气氛中，在温度T 1℃（单位：℃）下加热特定的铈掺杂的硅酸盐化合物的单晶， 由式（3）表示的条件<？in-line-formula description =“In-line Formulas”end =“lead”？> 800 <= T <1 <（T < （3）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中T m1（单位：°C））表示 单晶的熔点）。