公开(公告)号：US5604136A

公开(公告)日：1997-02-18

申请号：US452313

申请日：1995-05-26

申请人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

发明人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

IPC分类号： H01L31/105 ,  H01L31/12 ,  H01L31/153 ,  H01L21/208

CPC分类号： H01L31/125 ,  H01L31/1055 ,  H01L31/153

摘要： A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

摘要翻译： 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤：a）在衬底的一侧上制备作为发光单元的LED结构; b）在衬底的另一侧上形成缓冲层; 和c）在缓冲层上沉积一个引脚（正型/本征型/负型）二极管作为该蓝/红光转换器的光吸收单元，并且在1kf欧米茄时获得的上升时间值为112.5μsec。 本发明希望降低成本，简化制备过程，并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

公开(公告)号：US5714772A

公开(公告)日：1998-02-03

申请号：US690675

申请日：1996-07-31

申请人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

发明人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

IPC分类号： H01L31/105 ,  H01L31/12 ,  H01L31/153 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L31/125 ,  H01L31/1055 ,  H01L31/153

摘要： A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

摘要翻译： 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤：a）在衬底的一侧上制备作为发光单元的LED结构; b）在衬底的另一侧上形成缓冲层; 以及c）在缓冲层上沉积一个引脚（正型/本征型/负型）二极管作为该蓝/红光转换器的光吸收单元，并且在1k欧米茄下获得的上升时间值为112.5微秒。 本发明希望降低成本，简化制备过程，并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

公开(公告)号：US6054747A

公开(公告)日：2000-04-25

申请号：US100801

申请日：1998-06-19

申请人： Yean-Kuen Fang ,  Kuen-Hsien Wu ,  Kuen-Hsien Lee

发明人： Yean-Kuen Fang ,  Kuen-Hsien Wu ,  Kuen-Hsien Lee

IPC分类号： H01L27/144 ,  H01L31/105 ,  H01L31/075

CPC分类号： H01L31/1055 ,  H01L27/1443

摘要： An integrated photoreceiver is provided. The photoreceiver includes a substrate, a metal-insulator-semiconductor switch (MISS) formed on a first portion of the substrate, and a photoreceiving structure formed on a second portion of the substrate for receiving a light signal and generating a current signal to trigger the MISS in response to said light signal.

摘要翻译： 提供集成光接收器。 光接收器包括衬底，形成在衬底的第一部分上的金属 - 绝缘体 - 半导体开关（MISS）和形成在衬底的第二部分上的光接收结构，用于接收光信号并产生电流信号以触发 MISS响应所述光信号。

公开(公告)号：US5965270A

公开(公告)日：1999-10-12

申请号：US684416

申请日：1996-07-19

申请人： Yeau-Kuen Fang ,  Kuen-Hsien Lee

发明人： Yeau-Kuen Fang ,  Kuen-Hsien Lee

IPC分类号： H01L23/525 ,  H01L23/12

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  Y10T428/24975

摘要： An amorphous-silicone-based antifuse structure has been invented for VLSI (Very Large Scale Integration circuits) FPGA's (Fields Programmable Gate Array) applications. The structure comprises from top to bottom a first Al layer/a first i-a-SiC:H layer/an i-a-SiH layer/a second i-a-SiC:H layer/a second Al layer, which is basically a MIM (Metal/Insulator/Metal) structure. The MIM structure offers such major advantages as simple for preparation and low in cost. Due to use of the Al layer as an electrode metal and use of a PECVD system for the preparation of the amorphous silicon materials, the antifuse structure is compatible with that of general VLSI devices. In addition, due to a difference in the thickness of barrier enhancement layers in the first and the second i-a-SiC:H layer, a programmed voltage can be adjusted easily and applied in many fields. This structure has a very low on-resistance as the antifuse structure breakdown. The anitifuse has a high resistance (i.e. OFF state) under an unprogrammable state and its leakage current under 5V bias is smaller than 100 nA.

摘要翻译： 针对VLSI（超大规模集成电路）FPGA（Field Programmable Gate Array）领域，已经发明了一种非晶硅基反熔丝结构。 该结构从顶部到底部包括第一Al层/第一ia-SiC：H层/ ia-SiH层/第二ia-SiC：H层/第二Al层，其基本上是MIM（金属/绝缘体 /金属）结构。 MIM结构具有制备简单，成本低等优点。 由于使用Al层作为电极金属和使用PECVD系统来制备非晶硅材料，所以反熔丝结构与一般的VLSI器件相兼容。 此外，由于第一和第二i-a-SiC：H层中的阻挡增强层的厚度差异，可以容易地调节编程电压并应用于许多领域。 这种结构具有非常低的导通电阻，因为反熔丝结构击穿。 该方案在不可编程状态下具有高电阻（即OFF状态），其5V电压下的漏电流小于100nA。

公开(公告)号：US6072201A

公开(公告)日：2000-06-06

申请号：US227322

申请日：1999-01-06

申请人： Yeau-Kuen Fang ,  Kuen-Hsien Lee ,  Gun-Yuan Lee

发明人： Yeau-Kuen Fang ,  Kuen-Hsien Lee ,  Gun-Yuan Lee

IPC分类号： H01L31/107 ,  H01L29/165 ,  H01L31/0312

CPC分类号： H01L31/1075

摘要： An amorphous silicon based hole-injection type "Separate Absorption and Multiplication Avalanche Photodiode" ("SAMAPD") has been invented. The device was made by separating an absorption layer and an avalanche layer from a conventional APD (Avalanche Photodiode). This will make a majority of an voltage bias to go across on the avalanche layer (i.e., a high energy bandgap material) and to enlarge an avalanche multiplication effect (i.e., increasing optical gains). In addition, the voltage bias goes across on the absorption layer will be sufficiently small to reduce a dark current. Using an i-a-Si:H material as the avalanche layer material and an i-a-Si.sub.1-x :Ge.sub.x :H material as the absorption layer material, the hole-injection type SAMPAD yields a very high gain, i.e., 686, at a reverse bias of 16V under an incident light power of P.sub.in =1 .mu.w. The product of this invention is very suitable for use in a long distance optical communication.

摘要翻译： 已经发明了非晶硅基空穴注入型“分离吸收和乘法雪崩光电二极管”（“SAMAPD”）。 该装置通过从常规APD（雪崩光电二极管）分离吸收层和雪崩层而制成。 这将使大部分电压偏置在雪崩层（即，高能带隙材料）上穿过，并且增大雪崩倍增效应（即，增加光学增益）。 此外，在吸收层上穿过的电压偏压将足够小以减少暗电流。 使用ia-Si：H材料作为雪崩层材料和ia-Si1-x：Gex：H材料作为吸收层材料，空穴注入型SAMPAD产生非常高的增益，即686，在反向 Pin = 1μW的入射光功率为16V。 本发明的产品非常适用于长距离光通信。