公开(公告)号：US5604136A

公开(公告)日：1997-02-18

申请号：US452313

申请日：1995-05-26

申请人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

发明人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

IPC分类号： H01L31/105 ,  H01L31/12 ,  H01L31/153 ,  H01L21/208

CPC分类号： H01L31/125 ,  H01L31/1055 ,  H01L31/153

摘要： A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

摘要翻译： 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤：a）在衬底的一侧上制备作为发光单元的LED结构; b）在衬底的另一侧上形成缓冲层; 和c）在缓冲层上沉积一个引脚（正型/本征型/负型）二极管作为该蓝/红光转换器的光吸收单元，并且在1kf欧米茄时获得的上升时间值为112.5μsec。 本发明希望降低成本，简化制备过程，并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

公开(公告)号：US5714772A

公开(公告)日：1998-02-03

申请号：US690675

申请日：1996-07-31

申请人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

发明人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

IPC分类号： H01L31/105 ,  H01L31/12 ,  H01L31/153 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L31/125 ,  H01L31/1055 ,  H01L31/153

摘要： A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

摘要翻译： 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤：a）在衬底的一侧上制备作为发光单元的LED结构; b）在衬底的另一侧上形成缓冲层; 以及c）在缓冲层上沉积一个引脚（正型/本征型/负型）二极管作为该蓝/红光转换器的光吸收单元，并且在1k欧米茄下获得的上升时间值为112.5微秒。 本发明希望降低成本，简化制备过程，并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

公开(公告)号：US5502595A

公开(公告)日：1996-03-26

申请号：US253907

申请日：1994-06-03

申请人： Lee-Ching Kuo ,  Fang-Chuan Ho ,  William Lee ,  Yean-Kuen Fang

发明人： Lee-Ching Kuo ,  Fang-Chuan Ho ,  William Lee ,  Yean-Kuen Fang

IPC分类号： G02B5/28 ,  G02B1/10 ,  G02B5/22

CPC分类号： G02B5/285

摘要： A color filter comprising a transparent substrate and two or more multilayer films of amorphous silicon materials deposited on said substrate, each film being different, each layer of said two or more multi-layer films having a thickness less than the wavelength of the visible light and at least three layers of said two or more multi-layer films of amorphous silicon materials in an alternate arrangement wherein the amorphous silicon materials are selected from a-SiOx and a-SiNx is described. A method of preparing the color filter comprising depositing on the substrate by PECVD method two or more multilayer films is also described. The color filters prepared by PECVD method have a more compact texture and a better environmental resistant. The PECVD method for the preparation of the filters is more efficient than conventional methods.

摘要翻译： 一种滤色器，包括透明基板和沉积在所述基板上的两个或更多个非晶硅材料多层膜，每个膜不同，所述两层或多层多层膜的每层的厚度均小于可见光的波长， 描述了至少三层所述两个或更多个非晶硅材料的多层薄膜，其中非晶硅材料选自a-SiOx和a-SiNx。 还描述了一种制备滤色器的方法，包括通过PECVD方法在基板上沉积两个或更多个多层膜。 通过PECVD方法制备的滤色片具有更紧凑的质感和更好的耐环境性。 用于制备过滤器的PECVD方法比常规方法更有效。

公开(公告)号：US5789263A

公开(公告)日：1998-08-04

申请号：US475191

申请日：1995-06-07

申请人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

发明人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L31/101 ,  H01L31/108

CPC分类号： H01L31/101 ,  H01L31/108

摘要： An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

摘要翻译： 一种非晶硅色彩检测器，包括由透明导电氧化膜（TCO）层/ a-Si：H层/金属层构成的结构，其中a-Si：H层是非晶硅层，其厚度大于 并且金属层由选自Cr，Au，Pd，Al，Pt，Mo，Ag或Ti的金属组成的金属制成。 根据对不同偏置电压中的不同颜色光的吸光度，颜色检测器的耗尽区域被重新布置在其位置和内容上，以达到检测不同颜色光的目的。 非晶硅彩色图像传感器包括多个彩色检测器，其布置成并入扫描装置的线性阵列，处理器和A / D转换器，以处理从扫描获得的信号。 无定形硅胶彩色图像传感器特别用于扫描机或传真机。 还公开了非晶硅色彩检测器的制造方法。

公开(公告)号：US5449923A

公开(公告)日：1995-09-12

申请号：US861294

申请日：1992-03-31

申请人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

发明人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L31/101 ,  H01L31/108

CPC分类号： H01L31/101 ,  H01L31/108

摘要： An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color-detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

摘要翻译： 一种非晶硅色彩检测器，包括由透明导电氧化膜（TCO）层/ a-Si：H层/金属层构成的结构，其中a-Si：H层是非晶硅层，其厚度大于 并且金属层由选自Cr，Au，Pd，Al，Pt，Mo，Ag或Ti的金属组成的金属制成。 颜色检测器的耗尽区根据对不同偏置电压中的不同颜色光的吸光度重新排列在其位置和内容上，以达到检测不同颜色光的目的。 非晶硅彩色图像传感器包括多个彩色检测器，其布置成并入扫描装置的线性阵列，处理器和A / D转换器，以处理从扫描获得的信号。 无定形硅胶彩色图像传感器特别用于扫描机或传真机。 还公开了非晶硅色彩检测器的制造方法。

公开(公告)号：US06291762B1

公开(公告)日：2001-09-18

申请号：US09456640

申请日：1999-12-08

申请人： Yih-Song Jan ,  Jong-Min Liu ,  Chih-Chiang Chen ,  Lee-Ching Kuo

发明人： Yih-Song Jan ,  Jong-Min Liu ,  Chih-Chiang Chen ,  Lee-Ching Kuo

IPC分类号： H01L31042

CPC分类号： B32B17/10788 ,  B32B17/06 ,  B32B17/10018 ,  B32B27/36 ,  H01L31/02 ,  H01L31/048 ,  H01L31/0481 ,  Y02E10/50

摘要： The present invention discloses a dust-proof and weather resistant photovoltaic module, including (a) a front substrate of light transmittable safety glass plate, wherein a photo-catalyst composition is applied to the safety glass plate; (b) a back substrate of weather resistant polyester polymer; and (c) a photosensitizer including electrical circuit copper foils and polymeric enclosing material (EVA) which is located between the front substrate and the back substrate. The method for fabricating a front substrate of a photovoltaic module includes applying a photo-catalyst composition onto a safety glass plate; evaporating the photo-catalyst composition to a gel; and seating the gel to Rutile titanium dioxide. The photo-catalyst composition includes a metal oxide, an acid regent and a surfactant.

摘要翻译： 本发明公开了一种防尘防风光伏模块，包括（a）可透光安全玻璃板的前基板，其中将光催化剂组合物施加到安全玻璃板上; （b）耐候性聚酯聚合物的背面基材; 和（c）光敏剂，其包括位于前基板和后基板之间的电路铜箔和聚合物封闭材料（EVA）。 制造光伏组件的前基板的方法包括将光催化剂组合物涂覆在安全玻璃板上; 将光催化剂组合物蒸发成凝胶; 并将凝胶置于金红石二氧化钛上。 光催化剂组合物包括金属氧化物，酸摄取剂和表面活性剂。

公开(公告)号：US5356656A

公开(公告)日：1994-10-18

申请号：US38176

申请日：1993-03-26

申请人： Lee-Ching Kuo ,  Jinn-Shing King ,  Wen-Yueh Hsu ,  Yu-Tai Tsai

发明人： Lee-Ching Kuo ,  Jinn-Shing King ,  Wen-Yueh Hsu ,  Yu-Tai Tsai

IPC分类号： B05D7/24 ,  C08F2/46 ,  H01L31/0392 ,  H01L31/20 ,  B05D1/00

CPC分类号： H01L31/202 ,  B05D7/24 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of manufacturing a flexible amorphous silicon solar cell includes the steps of: a) coating a PI varnish on a glass substrate; b) imidizing the PI varnish film; c) vacuum-depositing a metal film on the PI film; d) vacuum-depositing an amorphous silicon film on the metal film; e) vacuum-depositing a transparent conducting film on the amorphous silicon film; and f) separating the PI film from the glass substrate. The method also provides for preparing the PI varnish by the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides.

摘要翻译： 制造柔性非晶硅太阳能电池的方法包括以下步骤：a）在玻璃基板上涂覆PI清漆; b）酰亚胺化PI清漆膜; c）在PI膜上真空沉积金属膜; d）在金属膜上真空沉积非晶硅膜; e）在所述非晶硅膜上真空沉积透明导电膜; 和f）从玻璃基板分离PI膜。 该方法还提供了以下步骤制备PI清漆：1）制备60-100重量％非质子传递溶剂和0-40重量％芳族溶剂的混合溶液; 2）以1：9的摩尔比加入混合溶液中2种芳族二胺; 和3）进一步在混合溶液中以1:5的摩尔比加入两种芳族二酸酐。

公开(公告)号：US06277667B1

公开(公告)日：2001-08-21

申请号：US09391257

申请日：1999-09-07

申请人： Chorng-Jye Huang ,  Cheng-Ting Chen ,  Chien-sheng Huang ,  Lee-Ching Kuo

发明人： Chorng-Jye Huang ,  Cheng-Ting Chen ,  Chien-sheng Huang ,  Lee-Ching Kuo

IPC分类号： H01L2100

CPC分类号： H01L31/022425 ,  H01L31/18 ,  Y02E10/50

摘要： This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P−/P+ or N−/N+ diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P+ or N+ diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.

摘要翻译： 本发明公开了一种制造太阳能电池的新方法。 使用现有的丝网印刷，掩模或光刻技术，在形成电极所需的N型或P型硅晶片的位置上涂覆P型或N型扩散源。 然后，将低剂量P型或N型扩散源原位扩散到N型或P型硅晶片以及涂覆在N型或P-型硅晶片上的P型或N型扩散源， 在炉中形成硅晶片。 此后，在N型或P型硅晶片内形成P- / P +或N- / N +扩散区。 最后，通过丝网印刷形成与P +或N +扩散区对准的电极。 然后，可以获得具有高光电流和低串联电阻的太阳能电池。

公开(公告)号：US5693745A

公开(公告)日：1997-12-02

申请号：US598405

申请日：1996-02-08

申请人： Lee-Ching Kuo ,  Jinn-Shing King ,  Wen-Yueh Hsu ,  Yu-Tai Tsai

发明人： Lee-Ching Kuo ,  Jinn-Shing King ,  Wen-Yueh Hsu ,  Yu-Tai Tsai

IPC分类号： B05D7/24 ,  C08F2/46 ,  H01L31/0392 ,  H01L31/20 ,  C08G73/10 ,  B05D5/00 ,  C08J3/00

CPC分类号： H01L31/202 ,  B05D7/24 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521

摘要： The present method provides a method for preparing the PI varnish which has the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides. Such PI has a suitable thermal expansion coefficient and characteristics different form those of the PI currently in use.

摘要翻译： 本方法提供了一种制备PI清漆的方法，其具有以下步骤：1）制备60-100重量％非质子传递溶剂和0-40重量％芳族溶剂的混合溶液; 2）以1：9的摩尔比加入混合溶液中2种芳族二胺; 和3）进一步在混合溶液中以1:5的摩尔比加入两种芳族二酸酐。 这样的PI具有与当前使用的PI不同的合适的热膨胀系数和特性。