摘要:
The present invention relates to a micro optical communication device package. The package of the invention comprises a Micro-Electro-Mechanical System (MEMS) chip for executing an optical communication function. The MEMS chip is mounted on a base. An upper housing having an opened bottom is placed on the base to form an internal space together with the base. The upper housing is sealed with the base to hermetically seal the MEMS chip within the internal space. The MEMS chip is connected an optical fiber, which is extended through the upper housing to form a light path. A boot is fit around the optical fiber and fixed to the upper housing to seal a portion of the upper housing for allowing passage of the optical fiber.
摘要:
Disclosed is a WDM system for demultiplexing mixed optical signals transmitted through one channel from the outside to distribute specific wavelength optical signals into a plurality of channels. The WDM system has a receiving optical fiber for receiving the mixed optical signals. A filter is arranged in an output end of the receiving optical fiber for selectively transmitting a specific optical signal of a wavelength identical with the peak wavelength of the filter but reflecting remaining wavelength optical signals. A transmitting optical fiber outputs the specific wavelength optical signal transmitted through the filter. A shutter member attenuates the specific wavelength optical signal between the filter and the transmitting optical fiber. An actuator drives the shutter member across the propagation of the specific wavelength optical signal transmitted through the filter; and a control unit for controlling the actuation of the actuator. The built-in optical attenuators allow integration of individual components, simplify the structure of the system as well as improve the performance and reliability of the system.
摘要:
A micro-electro-mechanical system (MEMS) package having a hydrophobic layer is disclosed. The MEMS package includes: a base substrate, with an MEMS element provided on a surface of the base substrate; a lid, spaced apart from the MEMS element provided on the base substrate and covering the MEMS element; a side sealing member provided on a side surface of the base substrate and the surface of the lid, thus hermetically sealing the MEMS element from an external environment; and a hydrophobic layer which covers the part of the side sealing member that is exposed to the external environment, thus removing the hydrophilia from the side sealing member.
摘要:
Disclosed herein is an optical modulator module package using a flip-chip mounting technology, in which an optical modulator device is hermetically mounted using the flip-chip mounting technology. The optical modulator device is protected from an external environment, it is easy to transmit an electrical signal to the exterior, and optical characteristics of the optical modulator device are desirably maintained.
摘要:
A micro-electro-mechanical system (MEMS) package having a side double-sealing member and method of manufacturing the MEMS package is disclosed. The MEMS package is formed by forming a metal layer on a base substrate by patterning so that the metal layer surrounds an MEMS element provided on the base substrate, joining a lid glass to the metal layer, and providing a side double-sealing member on a surface of the base substrate and a side surface of the lid glass, thus hermetically sealing the MEMS element from the external environment. The MEMS package includes a base substrate, with an MEMS element provided on a surface of the base substrate; a lid glass joined to the base substrate such that the lid glass covers the MEMS element and transmits incident light; a dam sealing member provided on a surface of the base substrate and a side surface of the lid glass, thus hermetically sealing the MEMS element from the external environment; and a second sealing member deposited on an upper surface of the dam sealing member such that the second sealing member is provided on the surface of the base substrate and the side surface of the lid glass, thus secondarily hermetically sealing the MEMS element from the external environment.
摘要:
A mobile audio-video receiver with an external memory receptacle includes a base containing circuitry and components for functions of the mobile audio-video receiver, a front panel mounted on a front surface of the base, a display screen on the front panel, function buttons on the front panel for controlling the functions of the mobile audio-video receiver, and the external memory receptacle positioned in a side surface of the base such that an externally accessible internal memory can be inserted into the base behind the front panel.
摘要:
A touch panel video display system includes: a touch panel video display screen positioned in a rear surface of the portion of the seat such that a passenger behind the seat can view the touch panel video display screen; and an audio video junction controller connected to the touch panel video display screen for connecting one of a plurality of audio video devices to the video display screen in response to a device control input from the touch panel video display screen and for controlling audio from the plurality of audio video devices in response to an audio control input from the touch panel video display screen, wherein one of the plurality of audio video devices is a media player connected to the audio video junction controller such that playback operations of the media player are controlled by an operation input from the touch panel video display screen.
摘要:
Disclosed are a phase change RAM device and a method for fabricating a phase change RAM device, which can efficiently lower intensity of current required for changing a phase of a phase change layer. The method includes the steps of providing a semiconductor substrate formed with an insulating interlayer including a tungsten plug, forming a first oxide layer on the semiconductor substrate, forming a pad-type bottom electrode, which makes contact with the tungsten plug, in the first oxide layer, forming a second oxide layer on the first oxide layer including the bottom electrode, and forming a porous polystyrene pattern on the second oxide layer such that a predetermined portion of the second oxide layer corresponding to a center portion of the bottom electrode is covered with the porous polystyrene pattern.
摘要:
Disclosed is a phase change memory device having a uniformly decreased writing current necessary for phase change of a phase change layer and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate having a lower pattern; a first oxide layer formed on the semiconductor substrate to cover the lower pattern; a bottom electrode contact formed as a plug shape within the first oxide layer; a nano-size insulation layer formed on the first oxide layer including the bottom electrode contact; a phase change layer formed on the nano-size insulation layer; a top electrode formed on the phase change layer; a second oxide layer formed on the overall surface of the resulting substrate to cover a phase change cell having the bottom electrode contact, the nano-size insulation layer, the phase change layer, and the top electrode laminated successively; and a metal wiring formed within the second oxide layer to contact the top electrode. The nano-size insulation layer is made of any one chosen from a group including silicon oxide (SiO2), aluminum oxide (Al2O3), hafnium oxide (HfO2), and zirconium oxide (ZrO2) or from a group including silicon nitride (SiN) and aluminum nitride (AlN).
摘要翻译:公开了相变层的相位变化所需的写入电流均匀降低的相变存储器件及其制造方法。 相变存储器件包括具有较低图案的半导体衬底; 形成在所述半导体衬底上以覆盖所述下部图案的第一氧化物层; 在第一氧化物层内形成为塞子形状的底部电极接触; 形成在包括所述底部电极接触部的所述第一氧化物层上的纳米尺寸绝缘层; 形成在纳米尺寸绝缘层上的相变层; 形成在所述相变层上的顶部电极; 形成在所得基板的整个表面上的第二氧化物层,以覆盖具有底部电极接触的相变单元,纳米尺寸绝缘层,相变层和顶部电极; 以及形成在所述第二氧化物层内以接触所述顶部电极的金属布线。 纳米尺寸绝缘层由选自氧化硅(SiO 2),氧化铝(Al 2 O 3 O 3),氧化铝 >),氧化铪(HfO 2 O 2)和氧化锆(ZrO 2/2),或者包括氮化硅(SiN)和氮化铝(AlN)的组中。
摘要:
A phase change RAM device includes a semiconductor substrate having a phase change cell area and a voltage application area; a first oxide layer, a nitride layer and a second oxide layer sequentially formed on the semiconductor substrate; a first plug formed in the first oxide layer, the nitride layer and the second oxide layer of the phase change cell area; a second plug formed in the first oxide layer and the nitride layer of the voltage application area; a conductive line formed in the second oxide layer; a third oxide layer formed on the second oxide layer; a lower electrode shaped like a plug, the lower electrode being formed so as to directly make contact with the first plug; and a phase change layer and an upper electrode sequentially formed on the lower electrode in a pattern form.