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    Polymer having thieno[3,2-b] thiophene moieties
    1.
    发明授权
    Polymer having thieno[3,2-b] thiophene moieties 有权
    具有噻吩并[3,2-b]噻吩部分的聚合物

    公开(公告)号：US07919574B2

    公开(公告)日：2011-04-05

    申请号：US12331571

    申请日：2008-12-10

    申请人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S Ong

    发明人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S Ong

    IPC分类号： C08G75/06 ,  C08G75/00

    CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

    摘要： A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.

    摘要翻译： 包含一种或多种重复单元的聚合物，其中所述聚合物包括取代的噻吩并[3,2-b]噻吩组分A和相同类型的重复单元或不同类型的重复单元中的不同组分B，其中 该聚合物不包括取代或未取代的噻吩并[2,3-b]噻吩部分。 该聚合物可用作诸如有机薄膜晶体管的电子器件中的半导体。

    TFT having a fluorocarbon-containing layer
    4.
    发明授权
    TFT having a fluorocarbon-containing layer 有权
    TFT具有含氟碳的层

    公开(公告)号：US07282735B2

    公开(公告)日：2007-10-16

    申请号：US11276694

    申请日：2006-03-10

    申请人： Yiliang Wu ,  Ping Liu ,  Beng S Ong

    发明人： Yiliang Wu ,  Ping Liu ,  Beng S Ong

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0529 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/3127 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

    摘要： A thin film transistor composed of: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure.

    摘要翻译： 一种薄膜晶体管，包括：（a）包含噻吩化合物的半导体层，其中所述噻吩化合物包含一个或多个取代的噻吩单元，一个或多个未取代的噻吩单元和任选的一个或多个二价键; （b）栅极电介质; 和（c）与设置在半导体层和栅极电介质之间的栅极电介质接触的层，其中该层包括含有碳氟化合物结构的物质。

    Fabricating TFT having fluorocarbon-containing layer
    5.
    发明授权
    Fabricating TFT having fluorocarbon-containing layer 有权
    制造具有含氟烃层的TFT

    公开(公告)号：US08222073B2

    公开(公告)日：2012-07-17

    申请号：US11837016

    申请日：2007-08-10

    申请人： Yiliang Wu ,  Ping Liu ,  Beng S Ong

    发明人： Yiliang Wu ,  Ping Liu ,  Beng S Ong

    IPC分类号： G02F1/13 ,  H01L29/94

    CPC分类号： H01L51/0529 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/3127 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.

    摘要翻译： 一种制造薄膜晶体管的工艺，包括：（a）形成栅极电介质; （b）形成包含含氟碳结构的物质的层; 和（c）形成包含噻吩化合物的半导体层，所述噻吩化合物包含一个或多个取代的噻吩单元，一个或多个未取代的噻吩单元和任选的一个或多个二价键，其中所述层接触所述栅极电介质并且设置在所述半导体层和 栅电介质。

    Small molecular thiophene compound having divalent linkage
    6.
    发明授权
    Small molecular thiophene compound having divalent linkage 有权
    具有二价键的小分子噻吩化合物

    公开(公告)号：US07834199B2

    公开(公告)日：2010-11-16

    申请号：US11930389

    申请日：2007-10-31

    申请人： Beng S Ong ,  Ping Liu ,  Yiliang Wu

    发明人： Beng S Ong ,  Ping Liu ,  Yiliang Wu

    IPC分类号： C07D409/14

    CPC分类号： H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545

    摘要： A small molecular thiophene compound consisting of: at least one divalent linkage; and a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit, and wherein the number of the thiophene units is at least 6.

    摘要翻译： 一种由以下组成的小分子噻吩化合物：至少一个二价键; 和多个噻吩单元，每个噻吩单元由结构（A）表示，其中每个噻吩单元在第二环位置和第五环位置的一个或两个上键合，其中m为0,1或2，其中每个 噻吩单元根据取代基号，取代基同一性和取代基位置彼此相同或不同，其中每个R 1独立地选自：（a）烃基，（b）含杂原子的基团， 和（c）卤素，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置，或者位于第三环位置和第四环位置，其中对于任何两个相邻的噻吩单元 如结构（A1）所示：不排除在一个噻吩单元的3-位和另一个噻吩单元的3'-位上同时存在相同或不同的R 1，并且其中噻吩的数目 单位至少6。

    Small molecular thiophene compound
    7.
    发明授权
    Small molecular thiophene compound 有权
    小分子噻吩化合物

    公开(公告)号：US07700787B2

    公开(公告)日：2010-04-20

    申请号：US11927871

    申请日：2007-10-30

    申请人： Beng S Ong ,  Ping Liu ,  Maria Birau ,  Yiliang Wu

    发明人： Beng S Ong ,  Ping Liu ,  Maria Birau ,  Yiliang Wu

    IPC分类号： C07D409/14

    CPC分类号： H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31504

    摘要： A small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit wherein R1 is not part of a cyclic ring structure fused to the thiophene unit.

    摘要翻译： 由多个噻吩单元组成的小分子噻吩化合物，每个噻吩单元由结构（A）表示，其中每个噻吩单元在第二环位置和第五环位置的一个或两个上键合，其中m为0,1 或2，其中每个噻吩单元根据取代基号，取代基同一性和取代基位置彼此相同或不同，其中每个R 1独立地选自：（a）烃基，（b ）含有杂原子的基团，和（c）卤素，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置，或者位于第三环位置和第四环位置，其中 对于由结构（A1）表示的任何两个相邻的噻吩单元：不排除在一个噻吩单元的3位和在另一个噻吩的3'-位上同时存在相同或不同的R 1 单元，其中R1不是与噻吩单元稠合的环状结构的一部分。

    TFT fabrication process
    8.
    发明授权
    TFT fabrication process 有权
    TFT制造工艺

    公开(公告)号：US07553706B2

    公开(公告)日：2009-06-30

    申请号：US11276634

    申请日：2006-03-08

    申请人： Ping Liu ,  Yiliang Wu ,  Beng S Ong

    发明人： Ping Liu ,  Yiliang Wu ,  Beng S Ong

    IPC分类号： H01L21/00

    CPC分类号： H01L29/513 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.

    摘要翻译： 一种制造薄膜晶体管的方法，包括：（a）沉积半导体层; 以及（b）在沉积半导体层之前或之后沉积多层栅极电介质，其中所述多层电介质包括：（i）第一层，其包含选自任选取代的倍半硅氧烷，任选取代的第一材料 倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包括第二材料，其中第一层为 比第二层更靠近半导体层。