公开(公告)号：US20070140903A1

公开(公告)日：2007-06-21

申请号：US11508088

申请日：2006-08-22

Applicant: Ying Jin ,  Quan Gan

Inventor： Ying Jin ,  Quan Gan

IPC: G01N33/00

CPC classification number: G01N1/2813

Abstract: A blood smear preparation device includes a base; a carrying table for carrying a microscope slide thereon and being supported on the base; a lifting mechanism mounted to the base; a retaining stand suspended from an output end of the lifting mechanism; a spreader holder rotatably suspended from the retaining stand about a second rotating shaft and positioned above the carrying table; a positioning member for positioning the spreader; and a torsion elastic member provided about the second rotating shaft, with a free end of the torsion elastic member abutting against the spreader holder. With the provision of the second rotating shaft and the torsion elastic member, the spreader has a certain degree of flexibility and self-adaptiveness. Even if the spreader or the microscope slide has no good micro-flatness or straightness, the device may automatically adjust the positions of the spreader and the microscope slide to achieve a line contact and a surface contact, and thus ensure the quality of the blood smear.

Abstract translation: 血液涂片制剂装置包括： 用于在其上携带显微镜载玻片并承载在基座上的承载台; 安装到基座的提升机构; 保持架悬挂在提升机构的输出端; 吊架，其保持架可旋转地悬挂在第二旋转轴上并位于承载台的上方; 用于定位所述吊具的定位构件; 以及设置在所述第二旋转轴周围的扭转弹性构件，所述扭转弹性构件的自由端抵靠所述扩张器保持件。 通过设置第二旋转轴和扭转弹性构件，吊具具有一定程度的灵活性和自适应性。 即使放大器或显微镜载片没有良好的微平整度或平直度，该装置也可以自动调节展开器和显微镜载玻片的位置，以实现线接触和表面接触，从而确保血液涂片的质量 。

公开(公告)号：US07608220B2

公开(公告)日：2009-10-27

申请号：US11508088

申请日：2006-08-22

Applicant: Ying Jin ,  Quan Gan

Inventor： Ying Jin ,  Quan Gan

IPC: G01N21/00

CPC classification number: G01N1/2813

Abstract: A blood smear preparation device includes a base; a carrying table for carrying a microscope slide thereon and being supported on the base; a lifting mechanism mounted to the base; a retaining stand suspended from an output end of the lifting mechanism; a spreader holder rotatably suspended from the retaining stand about a second rotating shaft and positioned above the carrying table; a positioning member for positioning the spreader; and a torsion elastic member provided about the second rotating shaft, with a free end of the torsion elastic member abutting against the spreader holder. With the provision of the second rotating shaft and the torsion elastic member, the spreader has a certain degree of flexibility and self-adaptiveness. Even if the spreader or the microscope slide has no good micro-flatness or straightness, the device may automatically adjust the positions of the spreader and the microscope slide to achieve a line contact and a surface contact, and thus ensure the quality of the blood smear.

Abstract translation: 血液涂片制剂装置包括： 用于在其上携带显微镜载玻片并承载在基座上的承载台; 安装到基座的提升机构; 保持架悬挂在提升机构的输出端; 吊架，其保持架可旋转地悬挂在第二旋转轴上并位于承载台的上方; 用于定位所述吊具的定位构件; 以及设置在所述第二旋转轴周围的扭转弹性构件，所述扭转弹性构件的自由端抵靠所述扩张器保持件。 通过设置第二旋转轴和扭转弹性构件，吊具具有一定程度的灵活性和自适应性。 即使放大器或显微镜载片没有良好的微平整度或平直度，该装置也可以自动调节展开器和显微镜载玻片的位置，以实现线接触和表面接触，从而确保血液涂片的质量 。

公开(公告)号：US07947591B2

公开(公告)日：2011-05-24

申请号：US12099827

申请日：2008-04-09

Applicant: Peng-Fu Hsu ,  Fong-Yu Yen ,  Yi-Shien Mor ,  Huan-Just Lin ,  Ying Jin ,  Hun-Jan Tao

Inventor： Peng-Fu Hsu ,  Fong-Yu Yen ,  Yi-Shien Mor ,  Huan-Just Lin ,  Ying Jin ,  Hun-Jan Tao

IPC: H01L21/3205

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.

Abstract translation: 具有双金属栅极结构的半导体器件及其制造方法。 提供了具有由绝缘层分隔开的第一掺杂区域和第二掺杂区域的半导体衬底。 在第一掺杂区上形成第一金属栅叠层，在第二掺杂区上形成第二金属栅叠层。 密封层设置在第一栅极堆叠和第二栅极叠层的侧壁上。 第一金属栅叠层包括界面层，界面层上的高k电介质层，高k电介质层上的第一金属层，第一金属层上的金属插入层，金属上的第二金属层 插入层和第二金属层上的多晶硅层。 第二金属栅堆叠包括界面层，界面层上的高k电介质层，高k电介质层上的第二金属层和第二金属层上的多晶硅层。

公开(公告)号：US20100303016A1

公开(公告)日：2010-12-02

申请号：US12791669

申请日：2010-06-01

Applicant: Ying Jin ,  Yufei Blankenship

Inventor： Ying Jin ,  Yufei Blankenship

IPC: H04W40/00

CPC classification number: H04L27/0008

Abstract: In one embodiment, a method for transmitting information includes processing a downlink transport channel to generate a transport block (TB) having a TB size. The TB size is selected by selecting a modulation and coding scheme index (ITBS) and a physical resource block index (NPRB). The TB size for the selected ITBS and NPRB is selected so that an effective code rate at an user equipment (UE) does not exceed a specified threshold. The effective code rate is defined as a number of downlink (DL) information bits including TB cyclic redundancy check (CRC) bits and code block CRC bits divided by a number of physical channel bits on Physical Downlink Shared Channel (PDSCH). The transport block is mapped to multiple spatial layers. The number of spatial layers N is greater than or equal to three. The multiple spatial layers are transmitted to the UE.

Abstract translation: 在一个实施例中，一种用于发送信息的方法包括处理下行链路传输信道以生成具有TB大小的传输块（TB）。 通过选择调制和编码方案索引（ITBS）和物理资源块索引（NPRB）来选择TB大小。 所选择的ITBS和NPRB的TB大小被选择为使用户设备（UE）的有效码率不超过指定的阈值。 有效码率被定义为包括TB循环冗余校验（CRC）比特和码块CRC比特除以物理下行链路共享信道（PDSCH）上的物理信道比特数的下行链路（DL）信息比特数。 传输块被映射到多个空间层。 空间层数N大于或等于3。 多个空间层被传送到UE。

公开(公告)号：US20080188044A1

公开(公告)日：2008-08-07

申请号：US12099827

申请日：2008-04-09

Applicant: Peng-Fu Hsu ,  Fong-Yu Yen ,  Yi-Shien Mor ,  Huan-Just Lin ,  Ying Jin ,  Hun-Jan Tao

Inventor： Peng-Fu Hsu ,  Fong-Yu Yen ,  Yi-Shien Mor ,  Huan-Just Lin ,  Ying Jin ,  Hun-Jan Tao

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.

公开(公告)号：US20080099851A1

公开(公告)日：2008-05-01

申请号：US11552704

申请日：2006-10-25

Applicant: Peng-Fu Hsu ,  Fong-Yu Yen ,  Yi-Shien Mor ,  Huan-Just Lin ,  Ying Jin ,  Hun-Jan Tao

Inventor： Peng-Fu Hsu ,  Fong-Yu Yen ,  Yi-Shien Mor ,  Huan-Just Lin ,  Ying Jin ,  Hun-Jan Tao

IPC: H01L29/94 ,  H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.

Abstract translation: 具有双金属栅极结构的半导体器件及其制造方法。 提供了具有由绝缘层分隔开的第一掺杂区域和第二掺杂区域的半导体衬底。 在第一掺杂区上形成第一金属栅叠层，在第二掺杂区上形成第二金属栅叠层。 密封层设置在第一栅极堆叠和第二栅极叠层的侧壁上。 第一金属栅叠层包括界面层，界面层上的高k电介质层，高k电介质层上的第一金属层，第一金属层上的金属插入层，金属上的第二金属层 插入层和第二金属层上的多晶硅层。 第二金属栅堆叠包括界面层，界面层上的高k电介质层，高k电介质层上的第二金属层和第二金属层上的多晶硅层。

公开(公告)号：US20070228480A1

公开(公告)日：2007-10-04

申请号：US11395175

申请日：2006-04-03

Applicant: Fong-Yu Yen ,  Peng-Fu Hsu ,  Ying Jin

Inventor： Fong-Yu Yen ,  Peng-Fu Hsu ,  Ying Jin

IPC: H01L29/78

CPC classification number: H01L21/823842 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

Abstract: A CMOS device has PMOS and NMOS transistors with different gate structures overlying a semiconductor device. A first gate structure overlying the PMOS device region has a first gate dielectric layer overlying the semiconductor substrate, and a first gate conductor overlying the first gate dielectric layer. A second gate device region overlying the NMOS device region has a second gate dielectric layer overlying the semiconductor substrate, and a second gate conductor overlying the first gate dielectric layer. The first gate conductor has a silicon-based material layer, and the second gate conductor has a metal-based material layer.

Abstract translation: CMOS器件具有覆盖半导体器件的不同栅极结构的PMOS和NMOS晶体管。 覆盖PMOS器件区的第一栅极结构具有覆盖在半导体衬底上的第一栅极电介质层和覆盖第一栅极介电层的第一栅极导体。 覆盖NMOS器件区域的第二栅极器件区域具有覆盖半导体衬底的第二栅极介电层和覆盖第一栅极介电层的第二栅极导体。 第一栅极导体具有硅基材料层，第二栅极导体具有金属基材料层。

公开(公告)号：US08548027B2

公开(公告)日：2013-10-01

申请号：US12771757

申请日：2010-04-30

Applicant: Yanxing Zeng ,  Raymond W. K. Leung ,  Ying Jin ,  Chao Zhang

Inventor： Yanxing Zeng ,  Raymond W. K. Leung ,  Ying Jin ,  Chao Zhang

IPC: H04B1/00

CPC classification number: H04L1/004 ,  H03M13/134 ,  H03M13/27 ,  H03M13/2957 ,  H03M13/6325 ,  H04L1/005 ,  H04L1/0056 ,  H04L1/0071

Abstract: The embodiments of the present invention disclose an apparatus for transmitting multi-ary error-correcting codes, an apparatus for receiving multi-ary error-correcting codes, a data transmission system, and relevant methods to simplify operations. The apparatus for transmitting multi-ary error-correcting codes includes: a multi-ary channel encoder, adapted to perform multi-ary coding for source data frames of a user to obtain encoded sequences; a symbol mapper, adapted to perform symbol mapping for the encoded sequences to obtain symbol sequences; and a spreading and interleaving unit, adapted to spread and interleave the symbol sequences. Moreover, a corresponding apparatus for receiving multi-ary error-correcting codes, a data transmission system, and relevant methods are provided.

Abstract translation: 本发明的实施例公开了一种用于发送多重纠错码的装置，用于接收多重纠错码的装置，数据传输系统以及相关方法以简化操作。 用于发送多重纠错码的装置包括：多进道信道编码器，适用于对用户的源数据帧执行多元编码以获得编码序列; 符号映射器，适于对编码序列执行符号映射以获得符号序列; 以及扩展和交织单元，适于扩展和交织符号序列。 此外，提供了用于接收多重纠错码的相应装置，数据传输系统和相关方法。

公开(公告)号：US20110249590A1

公开(公告)日：2011-10-13

申请号：US13153293

申请日：2011-06-03

Applicant: Yufei Blankenship ,  Weimin Xiao ,  Ying Jin

Inventor： Yufei Blankenship ,  Weimin Xiao ,  Ying Jin

IPC: H04W72/00 ,  H04W24/00

CPC classification number: H04B7/0456 ,  H04B7/0632 ,  H04B7/0639 ,  H04L1/0003 ,  H04L1/0026 ,  H04L1/007 ,  H04L1/0073 ,  H04L1/1861 ,  H04L5/0023 ,  H04L5/0055 ,  H04L5/0057 ,  H04L5/006 ,  H04L27/2627 ,  H04W72/0413

Abstract: A system and method for system and method for multiplexing control and data channels in a multiple input, multiple output (MIMO) communications system are provided. A method for transmitting control symbols and data symbols on multiple MIMO layers includes selecting a first set of codewords from Ncw codewords, distributing control symbols onto the first set of layers, placing data symbols of the first set of codewords onto the first set of layers, placing data symbols of the (Ncw-Ncw1) remaining codewords to remaining layers if Ncw>Ncw1, and transmitting the multiple MIMO layers. The first set of codewords is associated with a first set of layers from the multiple MIMO layers, and the Ncw codewords are to be transmitted simultaneously and the first set of codewords comprises Ncw1 MIMO codewords, where Ncw and Ncw1 are integers greater than or equal to 1. The remaining layers are MIMO layers from the multiple MIMO layers not in the first set of layers.

Abstract translation: 提供了一种用于在多输入多输出（MIMO）通信系统中复用控制和数据信道的系统和方法的系统和方法。 一种用于在多个MIMO层上发送控制符号和数据符号的方法包括从Ncw码字中选择第一组码字，将控制符号分配到第一组层上，将第一组码字的数据符号放置在第一组层上， 如果Ncw> Ncw1，将（Ncw-Ncw1）剩余码字的数据符号放置到剩余层，并发送多个MIMO层。 第一组码字与来自多个MIMO层的第一组层相关联，并且Ncw码字将被同时传输，并且第一组码字包括Ncw1个MIMO码字，其中Ncw和Ncw1是大于或等于 其余层是来自多个MIMO层的MIMO层，而不是第一组层。

公开(公告)号：US20100239035A1

公开(公告)日：2010-09-23

申请号：US12725203

申请日：2010-03-16

Applicant: Yufei Blankenship ,  Ying Jin ,  Oghenekome Oteri

Inventor： Yufei Blankenship ,  Ying Jin ,  Oghenekome Oteri

IPC: H04L27/28

CPC classification number: H04L1/0656

Abstract: A system and method for multiple input, multiple output (MIMO) uplink (UL) layer mapping is provided. A method for mapping modulation symbols to multiple input, multiple output (MIMO) layers includes receiving a first set of modulation symbols corresponding to a first transport block, partitioning the first set of modulation symbols into M1 parts, assigning each of the M1 parts to one of the M1 MIMO layers, and transmitting the modulation symbols mapped onto the M1 MIMO layers. The first transport block includes a plurality of code blocks, all modulation symbols of at least one code block belongs to a single part, and M1 is a positive integer value greater than one.

Abstract translation: 提供了一种用于多输入多输出（MIMO）上行链路（UL）层映射的系统和方法。 将调制符号映射到多输入多输出（MIMO）层的方法包括：接收对应于第一传输块的第一组调制符号，将第一组调制符号划分为M1部分，将M1部分分配给一个 并且发送映射到M1 MIMO层上的调制符号。 第一传输块包括多个码块，至少一个码块的所有调制符号属于单个部分，并且M1是大于1的正整数值。