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    TEMPERATURE DEPENDENT SYSTEM FOR READING ST-RAM
    1.
    发明申请
    TEMPERATURE DEPENDENT SYSTEM FOR READING ST-RAM 失效
    用于读取ST-RAM的温度依赖系统

    公开(公告)号：US20100091562A1

    公开(公告)日：2010-04-15

    申请号：US12250036

    申请日：2008-10-13

    申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Henry F. Huang ,  Yong Lu

    发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Henry F. Huang ,  Yong Lu

    IPC分类号： G11C7/00 ,  G11C11/02

    CPC分类号： G11C7/04 ,  G11C11/1659 ,  G11C11/1673

    摘要： A memory device that includes at least one memory cell, the memory cell includes: a magnetic tunnel junction (MTJ); and a transistor, wherein the transistor is operatively coupled to the MTJ; a bit line; a source line; and a word line, wherein the memory cell is operatively coupled between the bit line and the source line, and the word line is operatively coupled to the transistor; a temperature sensor; and control circuitry, wherein the temperature sensor is operatively coupled to the control circuitry and the control circuitry and temperature sensor are configured to control a current across the memory cell.

    摘要翻译： 一种包括至少一个存储单元的存储器件，所述存储单元包括：磁性隧道结（MTJ）; 和晶体管，其中所述晶体管可操作地耦合到所述MTJ; 有点线 源线; 和字线，其中所述存储器单元可操作地耦合在所述位线和所述源极线之间，并且所述字线可操作地耦合到所述晶体管; 温度传感器; 以及控制电路，其中所述温度传感器可操作地耦合到所述控制电路，并且所述控制电路和温度传感器被配置为控制横跨所述存储器单元的电流。

    Temperature dependent system for reading ST-RAM
    2.
    发明授权
    Temperature dependent system for reading ST-RAM 失效
    读取ST-RAM的依赖温度的系统

    公开(公告)号：US07755965B2

    公开(公告)日：2010-07-13

    申请号：US12250036

    申请日：2008-10-13

    申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Henry F. Huang ,  Yong Lu

    发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Henry F. Huang ,  Yong Lu

    IPC分类号： G11C7/04 ,  G11C11/00 ,  G11C7/02

    CPC分类号： G11C7/04 ,  G11C11/1659 ,  G11C11/1673

    摘要： A memory device that includes at least one memory cell, the memory cell includes: a magnetic tunnel junction (MTJ); and a transistor, wherein the transistor is operatively coupled to the MTJ; a bit line; a source line; and a word line, wherein the memory cell is operatively coupled between the bit line and the source line, and the word line is operatively coupled to the transistor; a temperature sensor; and control circuitry, wherein the temperature sensor is operatively coupled to the control circuitry and the control circuitry and temperature sensor are configured to control a current across the memory cell.

    摘要翻译： 一种包括至少一个存储单元的存储器件，所述存储单元包括：磁性隧道结（MTJ）; 和晶体管，其中所述晶体管可操作地耦合到所述MTJ; 有点线 源线; 和字线，其中所述存储器单元可操作地耦合在所述位线和所述源极线之间，并且所述字线可操作地耦合到所述晶体管; 温度传感器; 以及控制电路，其中所述温度传感器可操作地耦合到所述控制电路，并且所述控制电路和温度传感器被配置为控制横跨所述存储器单元的电流。

    VOLTAGE REFERENCE GENERATION FOR RESISTIVE SENSE MEMORY CELLS
    3.
    发明申请
    VOLTAGE REFERENCE GENERATION FOR RESISTIVE SENSE MEMORY CELLS 有权
    电阻式记忆体的电压参考生成

    公开(公告)号：US20100118588A1

    公开(公告)日：2010-05-13

    申请号：US12269598

    申请日：2008-11-12

    申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  KangYong Kim ,  Henry F. Huang

    发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  KangYong Kim ,  Henry F. Huang

    IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C11/14

    CPC分类号： G11C13/004 ,  G11C5/147 ,  G11C7/14 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0038

    摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for generating a reference voltage for a resistive sense memory (RSM) cell, such as an STRAM cell. A dummy reference cell used to generate a reference voltage to sense a resistive state of an adjacent RSM cell. The dummy reference cell comprises a switching device, a resistive sense element (RSE) programmed to a selected resistive state, and a dummy resistor coupled to the RSE. A magnitude of the reference voltage is set in relation to the selected resistive state of the RSE and the resistance of the dummy resistor.

    摘要翻译： 本发明的各种实施例一般涉及一种用于为诸如STRAM单元的电阻式感测存储器（RSM）单元产生参考电压的装置和相关联的方法。 用于产生参考电压以感测相邻RSM单元的电阻状态的虚拟参考单元。 虚拟参考单元包括开关装置，被编程为选择的电阻状态的电阻感测元件（RSE）和耦合到RSE的虚拟电阻。 参考电压的大小相对于RSE的选定电阻状态和虚拟电阻器的电阻设定。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
    4.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 有权
    旋转转矩记忆自参考读取方法

    公开(公告)号：US20120106241A1

    公开(公告)日：2012-05-03

    申请号：US13349052

    申请日：2012-01-12

    申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC分类号： G11C11/02

    CPC分类号： G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    摘要： A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Pipeline sensing using voltage storage elements to read non-volatile memory cells
    5.
    发明授权
    Pipeline sensing using voltage storage elements to read non-volatile memory cells 有权
    管道感应使用电压存储元件来读取非易失性存储单元

    公开(公告)号：US07936625B2

    公开(公告)日：2011-05-03

    申请号：US12409671

    申请日：2009-03-24

    申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  KangYong Kim ,  Henry F. Huang

    发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  KangYong Kim ,  Henry F. Huang

    IPC分类号： G11C7/00

    CPC分类号： G11C7/1039 ,  G11C7/08 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/56 ,  G11C11/5607 ,  G11C13/00 ,  G11C13/004 ,  G11C13/0061 ,  G11C2013/0054

    摘要： Various embodiments are generally directed to a method and apparatus for carrying out a pipeline sensing operation. In some embodiments, a read voltage from a first memory cell is stored in a voltage storage element (VSE) and compared to a reference voltage to identify a corresponding memory state of the first memory cell while a second read voltage from a second memory cell is stored in a second VSE. In other embodiments, bias currents are simultaneously applied to a first set of memory cells from the array while read voltages generated thereby are stored in a corresponding first set of VSEs. The read voltages are sequentially compared with at least one reference value to serially output a logical sequence corresponding to the memory states of the first set of memory cells while read voltages are stored for a second set of memory cells in a second set of VSEs.

    摘要翻译： 各种实施例通常涉及用于执行流水线检测操作的方法和装置。 在一些实施例中，来自第一存储器单元的读取电压被存储在电压存储元件（VSE）中并与参考电压进行比较，以识别第一存储器单元的相应存储器状态，而来自第二存储器单元的第二读取电压为 存储在第二个VSE中。 在其他实施例中，偏置电流同时从阵列施加到第一组存储器单元，而由此产生的读取电压被存储在对应的第一组VSE中。 读取电压与至少一个参考值顺序地比较，以串行输出对应于第一组存储器单元的存储器状态的逻辑序列，而在第二组VSE中为第二组存储器单元存储读取电压。

    Pipeline Sensing Using Voltage Storage Elements to Read Non-Volatile Memory Cells
    6.
    发明申请
    Pipeline Sensing Using Voltage Storage Elements to Read Non-Volatile Memory Cells 有权
    使用电压存储元件读取非易失性存储单元的管道感应

    公开(公告)号：US20100246250A1

    公开(公告)日：2010-09-30

    申请号：US12409671

    申请日：2009-03-24

    申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  KangYong Kim ,  Henry F. Huang

    发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  KangYong Kim ,  Henry F. Huang

    IPC分类号： G11C11/14 ,  G11C7/00

    CPC分类号： G11C7/1039 ,  G11C7/08 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/56 ,  G11C11/5607 ,  G11C13/00 ,  G11C13/004 ,  G11C13/0061 ,  G11C2013/0054

    摘要： Various embodiments are generally directed to a method and apparatus for carrying out a pipeline sensing operation. In some embodiments, a read voltage from a first memory cell is stored in a voltage storage element (VSE) and compared to a reference voltage to identify a corresponding memory state of the first memory cell while a second read voltage from a second memory cell is stored in a second VSE. In other embodiments, bias currents are simultaneously applied to a first set of memory cells from the array while read voltages generated thereby are stored in a corresponding first set of VSEs. The read voltages are sequentially compared with at least one reference value to serially output a logical sequence corresponding to the memory states of the first set of memory cells while read voltages are stored for a second set of memory cells in a second set of VSEs.

    摘要翻译： 各种实施例通常涉及用于执行流水线检测操作的方法和装置。 在一些实施例中，来自第一存储器单元的读取电压被存储在电压存储元件（VSE）中并与参考电压进行比较，以识别第一存储器单元的相应存储器状态，而来自第二存储器单元的第二读取电压为 存储在第二个VSE中。 在其他实施例中，偏置电流同时从阵列施加到第一组存储器单元，而由此产生的读取电压被存储在对应的第一组VSE中。 读取电压与至少一个参考值顺序地比较，以串行输出对应于第一组存储器单元的存储器状态的逻辑序列，而在第二组VSE中为第二组存储器单元存储读取电压。

    Spin-transfer torque memory self-reference read method
    8.
    发明授权
    Spin-transfer torque memory self-reference read method 有权
    自旋转矩存储器自参考读取方式

    公开(公告)号：US08116122B2

    公开(公告)日：2012-02-14

    申请号：US12147723

    申请日：2008-06-27

    申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    摘要： A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Spin-transfer torque memory self-reference read method
    9.
    发明授权
    Spin-transfer torque memory self-reference read method 有权
    自旋转矩存储器自参考读取方式

    公开(公告)号：US08411495B2

    公开(公告)日：2013-04-02

    申请号：US13349052

    申请日：2012-01-12

    申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    摘要： A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
    10.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 有权
    旋转转矩记忆自参考读取方法

    公开(公告)号：US20090323402A1

    公开(公告)日：2009-12-31

    申请号：US12147723

    申请日：2008-06-27

    申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    摘要： A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。