公开(公告)号：US06204120B1

公开(公告)日：2001-03-20

申请号：US09162637

申请日：1998-09-28

申请人： Yitzhak Eric Gilboa ,  Benjamin Brosilow ,  Sagy Levy ,  Hedvi Spielberg ,  Itai Bransky

发明人： Yitzhak Eric Gilboa ,  Benjamin Brosilow ,  Sagy Levy ,  Hedvi Spielberg ,  Itai Bransky

IPC分类号： H01L218242

CPC分类号： H01L28/84 ,  H01L27/1085 ,  Y10S438/906

摘要： Systems and methods are described for semiconductor wafer pretreatment. A method of treating a semiconductor wafer, includes contacting the semiconductor wafer with a mixture including HF and CH3OH; and then contacting the semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of ultraviolet energy. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

摘要翻译： 描述了用于半导体晶片预处理的系统和方法。 一种处理半导体晶片的方法，包括使半导体晶片与包含HF和CH 3 OH的混合物接触; 然后使半导体晶片与Cl2接触，同时将所述半导体晶片暴露于紫外线能量源。 形成窗口的选择性HSG温度加宽。 此外，关于反应器环境和衬底条件的变化以及关于底层电介质层的选择性的鲁棒性都得到改善。

公开(公告)号：US06191011B1

公开(公告)日：2001-02-20

申请号：US09167005

申请日：1998-09-28

申请人： Yitzhak Eric Gilboa ,  Benjamin Brosilow ,  Sagy Levy ,  Hedvi Spielberg ,  Itai Bransky

发明人： Yitzhak Eric Gilboa ,  Benjamin Brosilow ,  Sagy Levy ,  Hedvi Spielberg ,  Itai Bransky

IPC分类号： H01L2136

CPC分类号： H01L28/84 ,  C23C16/24 ,  C23C16/4401 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

摘要： Systems and methods are described for semiconductor wafer pretreatment. A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint includes: providing a semiconductor wafer with the underlying oxide layer in a processing chamber; then pumping water from then processing chamber; and then depositing the silicon containing material on the semiconductor wafer. A step of seeding the semiconductor wafer can be conducted by exposing the semiconducotor wafer to a germanium containing gas. A chlorine containing precursor and/or hydrogen can be introduced into the processing chamber to increase the selectivity of the silicon containing material to the underlying oxide. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

摘要翻译： 描述了用于半导体晶片预处理的系统和方法。 通过通过降低较低温度端点拓宽所述含硅材料的形成窗口的选择温度来增加在沉积含硅材料期间相对于下面的氧化物层的硅沉积的选择性的方法包括：提供半导体晶片 处理室中的下面的氧化物层; 然后从处理室抽水; 然后将含硅材料沉积在半导体晶片上。 半导体晶片接合的步骤可以通过将半导体晶片暴露于含锗气体来进行。 可以将含氯前体和/或氢气引入处理室中以增加含硅材料对下面的氧化物的选择性。 形成窗口的选择性HSG温度加宽。 此外，关于反应器环境和衬底条件的变化以及关于底层电介质层的选择性的鲁棒性都得到改善。