公开(公告)号：US20120217591A1

公开(公告)日：2012-08-30

申请号：US13326253

申请日：2011-12-14

申请人： Yoichi KAMADA

发明人： Yoichi KAMADA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L23/53223 ,  H01L21/76841 ,  H01L21/823475 ,  H01L23/53252 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/454 ,  H01L29/4966 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/11 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes an electrode material diffusion suppression layer provided either between a gate electrode and a gate insulation film, between Al-containing ohmic electrodes and an Au interconnection, and below the gate electrode and above the Al-containing ohmic electrodes, the electrode material diffusion suppression layer having a structure wherein a first the TaN layer, a Ta layer, and a second the TaN layer are stacked in sequence.

摘要翻译： 半导体器件包括设置在栅电极和栅极绝缘膜之间，在含Al欧姆电极和Au互连之间以及栅电极下方和含Al的欧姆电极之上的电极材料扩散抑制层，电极材料 扩散抑制层，其具有第一TaN层，Ta层和第二TaN层依次层叠的结构。

公开(公告)号：US20120146134A1

公开(公告)日：2012-06-14

申请号：US13291576

申请日：2011-11-08

申请人： Yoichi KAMADA

发明人： Yoichi KAMADA

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A compound semiconductor device includes a compound semiconductor layer, a gate electrode disposed above the compound semiconductor layer, and a gate insulation film. The gate insulation film is interposed between the compound semiconductor layer and the gate electrode. The gate insulation film contains a fluorine compound at least in the vicinity of the interface with the compound semiconductor layer.

摘要翻译： 化合物半导体器件包括化合物半导体层，设置在化合物半导体层上方的栅极电极和栅极绝缘膜。 栅极绝缘膜介于化合物半导体层和栅电极之间。 栅极绝缘膜至少在与化合物半导体层的界面附近含有氟化合物。

公开(公告)号：US20120217545A1

公开(公告)日：2012-08-30

申请号：US13397028

申请日：2012-02-15

申请人： Yoichi KAMADA

发明人： Yoichi KAMADA

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66666 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/48472 ,  H01L2224/4903 ,  H03F1/3247 ,  H03F3/189 ,  H03F3/24 ,  H03F2200/204 ,  H03F2200/451

摘要： A method of producing a semiconductor device, includes: forming a semiconductor layer on a substrate; forming an a recess in the semiconductor layer by dry etching with a gas containing fluorine components, the recess having an opening portion on the surface of the semiconductor layer; forming a fluorine-containing region by heating the semiconductor layer and thus diffusing, into the semiconductor layer, the fluorine components attached to side surfaces and a bottom surface of the recess; forming an insulating film on an inner surface of the recess and on the semiconductor layer; and forming an electrode on the insulating film in a region in which the recess is formed.

摘要翻译： 一种制造半导体器件的方法，包括：在衬底上形成半导体层; 通过用含氟成分的气体进行干蚀刻在半导体层中形成凹部，该凹部在半导体层的表面上具有开口部分; 通过加热所述半导体层而形成含氟区域，从而将附着在所述凹部的侧面和底面的氟成分扩散到所述半导体层中; 在所述凹部的内表面和所述半导体层上形成绝缘膜; 以及在形成所述凹部的区域中在所述绝缘膜上形成电极。