公开(公告)号：US08865509B2

公开(公告)日：2014-10-21

申请号：US13824415

申请日：2012-03-15

申请人： Yoichiro Nishimoto ,  Nozomu Yasunaga ,  Takayoshi Matsuda

发明人： Yoichiro Nishimoto ,  Nozomu Yasunaga ,  Takayoshi Matsuda

IPC分类号： H01L21/00 ,  H01L21/306 ,  H01L31/18 ,  H01L31/0236

CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： A cleaning method of a silicon substrate includes a first step of etching a surface of a silicon substrate by a metal-ion-containing mixed aqueous solution of an oxidizing agent and hydrofluoric acid and of forming a porous layer on the surface of the silicon substrate, a second step of etching a pore of the porous layer by mixed acid mainly containing hydrofluoric acid and nitric acid and of forming texture on the surface of the silicon substrate, a third step of etching the surface of the silicon substrate on which the texture is formed with an alkaline chemical solution, and a fourth step of treating the silicon substrate etched by the alkaline chemical solution by ozone-containing water, of generating an air bubble within the pore formed in the silicon substrate, and of removing metal and organic impurities from within the pore.

摘要翻译： 硅衬底的清洁方法包括：通过含金属离子的氧化剂和氢氟酸的混合水溶液蚀刻硅衬底的表面并在硅衬底的表面上形成多孔层的第一步骤， 第二步，通过主要含有氢氟酸和硝酸的混合酸蚀刻多孔层的孔并在硅衬底的表面上形成纹理;第三步：蚀刻形成纹理的硅衬底的表面; 以及第四步骤，通过含臭氧的水处理由碱性化学溶液蚀刻的硅衬底，在硅衬底内形成的孔内产生气泡，以及从内部除去金属和有机杂质 孔。

公开(公告)号：US20130244369A1

公开(公告)日：2013-09-19

申请号：US13824415

申请日：2012-03-15

申请人： Yoichiro Nishimoto ,  Nozomu Yasunaga ,  Takayoshi Matsuda

发明人： Yoichiro Nishimoto ,  Nozomu Yasunaga ,  Takayoshi Matsuda

IPC分类号： H01L21/306 ,  H01L31/18

CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： A cleaning method of a silicon substrate includes a first step of etching a surface of a silicon substrate by a metal-ion-containing mixed aqueous solution of an oxidizing agent and hydrofluoric acid and of forming a porous layer on the surface of the silicon substrate, a second step of etching a pore of the porous layer by mixed acid mainly containing hydrofluoric acid and nitric acid and of forming texture on the surface of the silicon substrate, a third step of etching the surface of the silicon substrate on which the texture is formed with an alkaline chemical solution, and a fourth step of treating the silicon substrate etched by the alkaline chemical solution by ozone-containing water, of generating an air bubble within the pore formed in the silicon substrate, and of removing metal and organic impurities from within the pore.

摘要翻译： 硅衬底的清洁方法包括：通过含金属离子的氧化剂和氢氟酸的混合水溶液蚀刻硅衬底的表面并在硅衬底的表面上形成多孔层的第一步骤， 第二步，通过主要含有氢氟酸和硝酸的混合酸蚀刻多孔层的孔并在硅衬底的表面上形成纹理;第三步：蚀刻形成纹理的硅衬底的表面; 以及第四步骤，通过含臭氧的水处理由碱性化学溶液蚀刻的硅衬底，在硅衬底内形成的孔内产生气泡，以及从内部除去金属和有机杂质 孔。

公开(公告)号：US6156968A

公开(公告)日：2000-12-05

申请号：US272557

申请日：1999-03-19

申请人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

发明人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

IPC分类号： H01L21/306 ,  H01L31/0236 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： In preparing a solar cell, minute projections and recesses are uniformly formed in a surface of a single crystal silicon substrate or a polycrystal silicon substrate by dipping in an etching liquid composed of a mixed acid which is composed mainly of a hydrofluoride acid, a nitric acid and a phosphoric acid in addition to a surface active agent. A solar cell having a substrate in which spherical projections and recesses are formed in a surface of it to which light is incident; an apparatus for producing efficiently a solar cell by realizing the above-mentioned process, and a wet etching apparatus to effect stably the above-mentioned process to thereby maintaining a concentration of a nitric acid to be constant, are provided.

公开(公告)号：US20100029034A1

公开(公告)日：2010-02-04

申请号：US12519406

申请日：2007-10-24

申请人： Yoichiro Nishimoto

发明人： Yoichiro Nishimoto

IPC分类号： H01L31/18

CPC分类号： H01L31/02363 ,  Y02E10/50 ,  Y10S438/96

摘要： A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid. Second, a texture is formed by etching the surface of the silicon substrate after the porous layer is formed, by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.

摘要翻译： 一种制造具有硅衬底表面纹理的太阳能电池的方法包括：首先通过将硅衬底浸入含金属离子和氢氟酸的氧化试剂的混合水溶液中，在硅衬底的表面上形成多孔层。 第二，通过在形成多孔层之后通过蚀刻硅衬底的表面，通过将硅衬底浸入主要含有氢氟酸和硝酸的混合酸中来形成纹理。

公开(公告)号：US20090212026A1

公开(公告)日：2009-08-27

申请号：US12093836

申请日：2005-11-16

申请人： Tatsushi Sato ,  Yoshihito Imai ,  Teiji Takahashi ,  Takeshi Sakata ,  Tomoko Sendai ,  Yoichiro Nishimoto ,  Shigeru Matsuno ,  Takeyuki Maegawa ,  Takaaki Iwata

发明人： Tatsushi Sato ,  Yoshihito Imai ,  Teiji Takahashi ,  Takeshi Sakata ,  Tomoko Sendai ,  Yoichiro Nishimoto ,  Shigeru Matsuno ,  Takeyuki Maegawa ,  Takaaki Iwata

IPC分类号： B23H1/00

CPC分类号： B23H7/02 ,  B23H9/00

摘要： Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 Ω·cm and equal to or lower than 5 Ω·cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 μsec and equal to or lower than 4 μsec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined.

摘要翻译： 本发明提供一种导电材料的导电放电加工方法，例如太阳能电池硅，半导体晶片的制造方法以及基于该放电加工方法的太阳能电池单元的制造方法。 通过施加具有脉冲宽度的脉冲电压来执行体积电阻率等于或高于0.5Ω·cm且等于或小于5Ω·cm的高体积电阻率，硬脆性材料的放电加工 等于或高于1个音箱并且等于或低于4个音箱，并且在对线电极进行等于或高于10A且等于或小于50A的线电极加工时具有峰值电流，以及 在线电极和待加工对象之间产生放电脉冲。

公开(公告)号：US20130269553A1

公开(公告)日：2013-10-17

申请号：US13997281

申请日：2010-12-27

申请人： Yoichiro Nishimoto

发明人： Yoichiro Nishimoto

IPC分类号： B41F15/08

CPC分类号： B41F15/0818 ,  B41F15/44

摘要： A scraper central portion in which a first contact surface has a trapezoidal shape with a lower base longer than an upper base, and scraper end portions that extend and are bent from respective lateral sides of a trapezoidal shape of the scraper central portion to a side of the first contact surface, and that include second contact surfaces that come in contact with the coating material. A lower base of the scraper central portion and lower sides of the scraper end portions are on the same plane. In a state where the first contact surface is vertical to the surface of the screen plate, the lower base of the scraper central portion and the lower sides of the scraper end portions come in contact with the coating material on the surface of the screen plate, and slide on the surface of the screen plate.

摘要翻译： 刮刀中心部分，其中第一接触表面具有比上部基座更长的下部基座的梯形形状;以及刮刀端部，其从刮刀中心部分的梯形形状的侧面侧延伸并弯曲到 第一接触表面，并且包括与涂层材料接触的第二接触表面。 刮刀中心部分的下底部和刮刀端部的下侧位于同一平面上。 在第一接触表面垂直于筛板表面的状态下，刮刀中心部分的下基部和刮刀端部的下侧与筛板表面上的涂层材料接触， 并在屏板表面滑动。

公开(公告)号：US20120211050A1

公开(公告)日：2012-08-23

申请号：US13505237

申请日：2009-12-25

申请人： Yoichiro Nishimoto

发明人： Yoichiro Nishimoto

IPC分类号： H01L31/05

CPC分类号： H01L31/022433 ,  H01L31/0508 ,  Y02E10/50

摘要： Connection tabs include: a first connection tab 72 that is electrically connected to a connection electrode 62 on a rear side of the first solar battery cell 11 and extends to a rear side of the second solar battery cell 21; and a second connection tab 71 that is electrically connected to a connection electrode 52 on a light-receiving side of the second solar battery cell 21 and has a bent folded-back portion which extends to the rear side of the second solar battery cell 21 near the first solar battery cell 11 from the second solar battery cell. The first connection tab 71 and the second connection tab 72 are connected in a connection region that is within an overlapping region in which the first connection tab 72 and the second connection tab 21 overlap in a rear side of the second solar battery cell 21, and that is narrower than the overlapping region in the first direction.

摘要翻译： 连接片包括：第一连接片72，其电连接到第一太阳能电池单元11的后侧上的连接电极62并延伸到第二太阳能电池单元21的后侧; 以及与第二太阳能电池单元21的受光面侧的连接电极52电连接的第二连接片71，具有向第二太阳能电池单元21的背面延伸的弯曲折回部 来自第二太阳能电池单元的第一太阳能电池单元11。 第一连接片71和第二连接片72在第二太阳能电池单元21的后侧的第一连接片72和第二连接片21重叠的重叠区域内的连接区域中连接， 其比第一方向上的重叠区域窄。

公开(公告)号：US06340640B1

公开(公告)日：2002-01-22

申请号：US08933381

申请日：1997-09-19

申请人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

发明人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

IPC分类号： H01L21302

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： In preparing a solar cell, minute projections and recesses are uniformly formed in a surface of a single crystal silicon substrate or a polycrystal silicon substrate by dipping the substrate in an etching liquid of a mixed acid including a hydrofluoride acid, a nitric acid and an adjusting agent containing at least a phosphoric acid or a water-soluble carboxylic acid having a higher molecular weight than acetic acid for adjusting the etching rate of the etching liquid. A solar cell having a substrate in which spherical projections and recesses are formed in a surface thereof to which light is incident; an apparatus for producing a solar cell, and a wet etching apparatus to maintain a constant concentration of a nitric acid, are provided.

摘要翻译： 在制备太阳能电池时，通过将基板浸渍在包含氢氟酸，硝酸和调节的混合酸的蚀刻液中，在单晶硅基板或多晶硅基板的表面上均匀地形成微小的突起和凹陷 包含至少含有比乙酸分子量高的磷酸或水溶性羧酸的试剂以调节蚀刻液的蚀刻速率。 一种具有基板的太阳能电池，其中在入射光的表面上形成有球形的凸起和凹陷; 提供太阳能电池的制造装置以及保持硝酸浓度恒定的湿式蚀刻装置。

公开(公告)号：US08377734B2

公开(公告)日：2013-02-19

申请号：US13132187

申请日：2008-12-02

申请人： Yoichiro Nishimoto

发明人： Yoichiro Nishimoto

IPC分类号： H01L21/00

CPC分类号： H01L31/1868 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method includes: a first step of forming a passivation film on a first surface of a crystalline silicon substrate of a first conductive type; a second step of diffusing an element of a second conductive type into a second surface of the crystalline silicon substrate by thermal diffusion to form a diffusion layer, whereby a pn junction is formed; a third step of forming an antireflection film on the diffusion layer; a fourth step of disposing a first electrode paste on the second surface of the crystalline silicon substrate; a fifth step of disposing a second electrode paste on the passivation film; and a sixth step of firing the first electrode paste and the second electrode paste to form electrodes.

摘要翻译： 一种方法包括：在第一导电类型的晶体硅衬底的第一表面上形成钝化膜的第一步骤; 第二步骤，通过热扩散将第二导电类型的元件扩散到晶体硅衬底的第二表面中以形成扩散层，从而形成pn结; 在扩散层上形成防反射膜的第三步骤; 第四步骤，在所述晶体硅衬底的第二表面上设置第一电极浆料; 在所述钝化膜上设置第二电极浆料的第五步骤; 以及烧制第一电极浆料和第二电极浆料以形成电极的第六步骤。

公开(公告)号：US07741139B2

公开(公告)日：2010-06-22

申请号：US11300539

申请日：2005-12-15

申请人： Yoichiro Nishimoto

发明人： Yoichiro Nishimoto

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

摘要： A method of manufacturing a solar cell includes forming a diffusion layer on a crystal-type silicon substrate. The diffusion layer has a conductivity opposite to that of the substrate. Furthermore, the method includes etching and removing a part of the diffusion layer by using sodium silicate, and forming a first electrode that makes an electric contact with the diffusion layer and forming a second electrode that makes an electric contact with the substrate.

摘要翻译： 太阳能电池的制造方法包括在晶体硅基板上形成扩散层。 扩散层具有与衬底相反的导电性。 此外，该方法包括通过使用硅酸钠来蚀刻和去除扩散层的一部分，并且形成与扩散层电接触并形成与基板电接触的第二电极的第一电极。