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    Liquid crystal display device
    3.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号：US08310616B2

    公开(公告)日：2012-11-13

    申请号：US12500408

    申请日：2009-07-09

    申请人： Su-Young Yun ,  Young-Ho Lee ,  Jae-Hwan Chun

    发明人： Su-Young Yun ,  Young-Ho Lee ,  Jae-Hwan Chun

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133605 ,  G02F1/133308 ,  G02F1/133604 ,  G02F1/133611 ,  G02F2001/133317 ,  G02F2201/465

    摘要： Provided is a liquid crystal display device which is capable of preventing light leakage and preventing a dark portion from being viewed. The liquid crystal display device includes: a lower receiving container; a plurality of supporting walls arranged in a line along at least one side wall of the lower receiving container with gaps therebetween; a plurality of light sources arranged in a line so as to be provided in the gaps; and a reflecting cover covering at least a portion of each of the gaps.

    摘要翻译： 提供一种液晶显示装置，其能够防止光泄漏并防止看到暗部。 液晶显示装置包括：下接收容器; 多个支撑壁沿着下接收容器的至少一个侧壁排列成一行，其间具有间隙; 多个光源排列成一行，以便设置在间隙中; 以及覆盖每个间隙的至少一部分的反射罩。

    DISPLAY DEVICE WITH A GROUND ELECTRODE PHYSICALLY CONTACTING A RECEPTACLE MADE OF AN INSULATING MATERIAL
    5.
    发明申请
    DISPLAY DEVICE WITH A GROUND ELECTRODE PHYSICALLY CONTACTING A RECEPTACLE MADE OF AN INSULATING MATERIAL 有权
    具有接地电极的显示装置物理接触绝缘材料的插座

    公开(公告)号：US20100182768A1

    公开(公告)日：2010-07-22

    申请号：US12605918

    申请日：2009-10-26

    申请人： Su-Young YUN ,  Young-Ho Lee ,  Jae-Hwan Chun ,  Young-Nam Kim

    发明人： Su-Young YUN ,  Young-Ho Lee ,  Jae-Hwan Chun ,  Young-Nam Kim

    IPC分类号： G09F13/08

    CPC分类号： G02F1/133604 ,  G02F2001/133612 ,  H01R9/034 ,  H01R13/655

    摘要： Some embodiments include a display device having light sources located in a receptacle formed of an insulating material. The light sources can be easily grounded. The display device comprises a display panel for displaying an image; one or more light sources for providing light to the display panel; a lower receptacle formed of an insulating material and including a bottom part and side-wall parts surrounding the bottom part; an upper receptacle coupled to the lower receptacle, the upper and lower receptacles containing therebetween the display panel and the light sources; and a ground electrode physically contacting the upper and lower receptacles and electrically connected to each said light source. Other features are also provided.

    摘要翻译： 一些实施例包括具有位于由绝缘材料形成的插座中的光源的显示装置。 光源可以很容易接地。 显示装置包括用于显示图像的显示面板; 用于向显示面板提供光的一个或多个光源; 由绝缘材料形成并包括底部的下部容器和围绕底部的侧壁部分; 连接到下部容器的上部插座，上部和下部容器在其间容纳显示面板和光源; 以及接地电极，物理地接触上部和下部容器并电连接到每个所述光源。 还提供其他功能。

    LIQUID CRYSTAL DISPLAY DEVICE
    6.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 失效
    液晶显示装置

    公开(公告)号：US20100171897A1

    公开(公告)日：2010-07-08

    申请号：US12500408

    申请日：2009-07-09

    申请人： Su-Young Yun ,  Young-Ho Lee ,  Jae-Hwan Chun

    发明人： Su-Young Yun ,  Young-Ho Lee ,  Jae-Hwan Chun

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133605 ,  G02F1/133308 ,  G02F1/133604 ,  G02F1/133611 ,  G02F2001/133317 ,  G02F2201/465

    摘要： Provided is a liquid crystal display device which is capable of preventing light leakage and preventing a dark portion from being viewed. The liquid crystal display device includes: a lower receiving container; a plurality of supporting walls arranged in a line along at least one side wall of the lower receiving container with gaps therebetween; a plurality of light sources arranged in a line so as to be provided in the gaps; and a reflecting cover covering at least a portion of each of the gaps.

    摘要翻译： 提供一种液晶显示装置，其能够防止光泄漏并防止看到暗部。 液晶显示装置包括：下接收容器; 多个支撑壁沿着下接收容器的至少一个侧壁排列成一行，其间具有间隙; 多个光源排列成一行，以便设置在间隙中; 以及覆盖每个间隙的至少一部分的反射罩。

    Methods of forming fine patterns in integrated circuit devices
    7.
    发明授权
    Methods of forming fine patterns in integrated circuit devices 有权
    在集成电路器件中形成精细图案的方法

    公开(公告)号：US09117654B2

    公开(公告)日：2015-08-25

    申请号：US13470773

    申请日：2012-05-14

    申请人： Young-Ho Lee ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Sang-Yong Park

    发明人： Young-Ho Lee ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Sang-Yong Park

    IPC分类号： H01L21/467 ,  H01L27/02 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/762 ,  H01L23/544 ,  H01L27/115 ,  H01L27/105

    CPC分类号： H01L27/0207 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76229 ,  H01L23/544 ,  H01L27/1052 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

    摘要： A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are etched to partially remove the etch mask pattern from the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures. The first mask structure is selectively removed from between the spacers in the first region to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region, and a second mask pattern including the opposing sidewall spacers with the second mask structure therebetween in the second region.

    摘要翻译： 制造集成电路器件的方法包括在特征层的相应的第一和第二区域上形成第一和第二掩模结构。 第一和第二掩模结构中的每一个包括双掩模图案和其上具有相对于双掩模图案的蚀刻选择性的蚀刻掩模图案。 蚀刻第一和第二掩模结构的蚀刻掩模图案以从第二掩模结构部分去除蚀刻掩模图案。 间隔件形成在第一和第二掩模结构的相对侧壁上。 第一掩模结构被选择性地从第一区域中的间隔物之间​​移除，以限定第一掩模图案，其包括在第一区域中具有空隙的相对的侧壁间隔物，以及包括与第二掩模结构相对的侧壁间隔物的第二掩模图案 在第二区域中。

    METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE 有权
    形成半导体器件的图案的方法

    公开(公告)号：US20140191405A1

    公开(公告)日：2014-07-10

    申请号：US14208456

    申请日：2014-03-13

    申请人： Young-Ho Lee ,  Jae-Hwang Sim ,  Sang-Yong Park ,  Kyung-Lyul Moon

    发明人： Young-Ho Lee ,  Jae-Hwang Sim ,  Sang-Yong Park ,  Kyung-Lyul Moon

    IPC分类号： H01L23/528

    CPC分类号： H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76229 ,  H01L21/76816 ,  H01L21/76838 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11519 ,  H01L27/11526 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.

    摘要翻译： 提供一种形成半导体器件的图案的方法，其中精细图案和大幅图案同时并且彼此相邻地形成。 在该方法中，在衬底上形成第一层以覆盖包括在衬底中的第一区域和第二区域。 同时形成覆盖第一区域中的第一层的一部分的阻挡图案和覆盖第二区域中的第一层的一部分的低密度大图案。 在第一层上形成多个牺牲掩模图案，并在第一区域中形成阻挡图案。 形成覆盖多个牺牲掩模图案的暴露侧壁的多个间隔物。 去除多个牺牲掩模图案。 通过使用多个间隔物和阻挡图案作为第一区域中的蚀刻掩模并且在第二区域中使用低密度大宽度图案作为蚀刻掩模，同时蚀刻第一和第二区域中的第一层。

    Method of forming patterns for semiconductor device
    9.
    发明授权
    Method of forming patterns for semiconductor device 有权
    形成半导体器件图案的方法

    公开(公告)号：US08318603B2

    公开(公告)日：2012-11-27

    申请号：US12653588

    申请日：2009-12-16

    申请人： Young-Ho Lee ,  Jae-Hwang Sim ,  Sang-Yong Park ,  Kyung-Lyul Moon

    发明人： Young-Ho Lee ,  Jae-Hwang Sim ,  Sang-Yong Park ,  Kyung-Lyul Moon

    IPC分类号： H01L21/311

    CPC分类号： H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76229 ,  H01L21/76816 ,  H01L21/76838 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11519 ,  H01L27/11526 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.

    摘要翻译： 提供一种形成半导体器件的图案的方法，其中精细图案和大幅图案同时并且彼此相邻地形成。 在该方法中，在衬底上形成第一层以覆盖包括在衬底中的第一区域和第二区域。 同时形成覆盖第一区域中的第一层的一部分的阻挡图案和覆盖第二区域中的第一层的一部分的低密度大图案。 在第一层上形成多个牺牲掩模图案，并在第一区域中形成阻挡图案。 形成覆盖多个牺牲掩模图案的暴露侧壁的多个间隔物。 去除多个牺牲掩模图案。 通过使用多个间隔物和阻挡图案作为第一区域中的蚀刻掩模并且在第二区域中使用低密度大宽度图案作为蚀刻掩模，同时蚀刻第一和第二区域中的第一层。

    Methods of forming fine patterns in the fabrication of semiconductor devices
    10.
    发明授权
    Methods of forming fine patterns in the fabrication of semiconductor devices 有权
    在半导体器件的制造中形成精细图案的方法

    公开(公告)号：US08057692B2

    公开(公告)日：2011-11-15

    申请号：US12290420

    申请日：2008-10-30

    申请人： Sang-Yong Park ,  Jae-Hwang Sim ,  Young-Ho Lee ,  Kyung-Lyul Moon ,  Jae-Kwan Park

    发明人： Sang-Yong Park ,  Jae-Hwang Sim ,  Young-Ho Lee ,  Kyung-Lyul Moon ,  Jae-Kwan Park

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L21/76838 ,  H01L21/823456 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region. The feature layer is etched using the mask layer patterns as an etch mask in the second region and using the spacers as an etch mask in the first region to provide a feature layer pattern having fine features in the first region and broad features in the second region.

    摘要翻译： 在形成半导体器件的方法中，在衬底上提供特征层，并且在特征层上设置掩模层。 掩模层的一部分在半导体器件的第一区域被去除，其中特征层的精细特征将被定位，掩模层保留在半导体器件的第二区域中，其中特征层的广泛特征将是 位于。 模具掩模图案设置在第一区域中的特征层和第二区域中的掩模层上。 间隔层设置在第一区域和第二区域中的模具掩模图案上。 执行蚀刻工艺以蚀刻间隔层，使得间隔物保留在模具掩模图案的图案特征的侧壁处，并且蚀刻第二区域中的掩模层以在第二区域中提供掩模层图案。 使用掩模层图案作为第二区域中的蚀刻掩模蚀刻特征层，并且在第一区域中使用间隔物作为蚀刻掩模来提供在第一区域中具有精细特征的特征层图案，并且在第二区域中具有广泛特征 。