公开(公告)号：US07767006B2

公开(公告)日：2010-08-03

申请号：US10581729

申请日：2004-12-16

申请人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

发明人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

IPC分类号： B01D59/26

CPC分类号： H01L21/68721 ,  B01D53/002 ,  B01D2257/106 ,  C01B13/10 ,  H01L21/6715 ,  H01L21/68742 ,  H01L21/68785

摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

摘要翻译： 将水蒸气与由排放型臭氧发生器产生的O 3气体混合。 混合流体被冷却器冷却，从而O 3气体中所含的金属和氮氧化物等杂质溶解在冷凝水中。 随后，气液分离器将O 3气体与冷凝水分离。 水蒸汽再次与O3气体混合。 混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

公开(公告)号：US20070107751A1

公开(公告)日：2007-05-17

申请号：US10581729

申请日：2004-12-16

申请人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

发明人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

IPC分类号： B08B7/04 ,  C23G1/00 ,  B08B3/00

CPC分类号： H01L21/68721 ,  B01D53/002 ,  B01D2257/106 ,  C01B13/10 ,  H01L21/6715 ,  H01L21/68742 ,  H01L21/68785

摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

摘要翻译： 将水蒸汽与由放电型臭氧发生器产生的O 3气体混合。 混合流体由冷却器冷却，由此含有的O 3 3气体中的杂质如金属和氮氧化物溶解在冷凝水中。 随后，气液分离器从冷凝水中分离出O 3 N 3气体。 水蒸汽再次与O 3 3气体混合。 混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

公开(公告)号：US20070134822A1

公开(公告)日：2007-06-14

申请号：US11543256

申请日：2006-10-05

申请人： Shu Yamamoto ,  Yasuhiro Chouno ,  Yoshichika Tokuno

发明人： Shu Yamamoto ,  Yasuhiro Chouno ,  Yoshichika Tokuno

IPC分类号： H01L21/66

CPC分类号： B01F3/08 ,  B01F15/0022 ,  B01F15/0408 ,  B01F2215/0096 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67253

摘要： A process system produces a process liquid of a predetermined concentration in a blending tank by blending solutions respectively supplied from a plurality of solution supply sources, supplies the process liquid to a supply tank to store therein the process liquid, and supplies the process liquid from the supply tank to a process liquid discharge port. In this process system, whether a concentration of the process liquid in the supply tank has changed or not is judged. When it is judged that the concentration of the process liquid in the supply tank has changed, the process liquid is additionally supplied from the blending tank to the supply tank, or the solution is directly supplied from the solution supply source to the supply tank, so as to maintain the concentration of the process liquid.

摘要翻译： 处理系统通过混合从多个溶液供应源分别供应的溶液，在混合罐中产生预定浓度的处理液体，将处理液体供应到供应罐以在其中存储处理液体，并将处理液体从 供应罐到处理液排出口。 在该处理系统中，判断供给罐中的处理液的浓度是否变化。 当判断供应罐中的处理液体的浓度已经改变时，处理液体从混合罐另外供应到供应罐，或者溶液从溶液供应源直接供应到供应罐，因此 以保持工艺液体的浓度。

公开(公告)号：US08133327B2

公开(公告)日：2012-03-13

申请号：US11886662

申请日：2007-03-29

申请人： Yoshichika Tokuno ,  Hiroshi Nagayasu

发明人： Yoshichika Tokuno ,  Hiroshi Nagayasu

IPC分类号： B08B3/04

CPC分类号： H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67253 ,  Y10S134/902

摘要： Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

摘要翻译： 提供了一种防止在基板上产生水印并且可以以低成本执行的基板处理方法。 当用化学液体处理衬底时，该方法根据化学液体的种类控制衬底周围的环境湿度。 至少在干燥基板W的干燥步骤中进行湿度的控制。在一个实施例中，当在处理基板之后将含有作为干燥流体的IPA的流体供应到基板W时，控制基板周围的环境湿度 W与化学液体。

公开(公告)号：US20090014033A1

公开(公告)日：2009-01-15

申请号：US11886662

申请日：2007-03-29

申请人： Yoshichika Tokuno ,  Hiroshi Nagayasu

发明人： Yoshichika Tokuno ,  Hiroshi Nagayasu

IPC分类号： B08B3/04

CPC分类号： H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67253 ,  Y10S134/902

摘要： Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

摘要翻译： 提供了一种防止在基板上产生水印并且可以以低成本执行的基板处理方法。 当用化学液体处理衬底时，该方法根据化学液体的种类控制衬底周围的环境湿度。 至少在干燥基板W的干燥步骤中进行湿度的控制。在一个实施例中，当在处理基板之后将含有作为干燥流体的IPA的流体供应到基板W时，控制基板周围的环境湿度 W与化学液体。