公开(公告)号：US07767006B2

公开(公告)日：2010-08-03

申请号：US10581729

申请日：2004-12-16

申请人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

发明人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

IPC分类号： B01D59/26

CPC分类号： H01L21/68721 ,  B01D53/002 ,  B01D2257/106 ,  C01B13/10 ,  H01L21/6715 ,  H01L21/68742 ,  H01L21/68785

摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

摘要翻译： 将水蒸气与由排放型臭氧发生器产生的O 3气体混合。 混合流体被冷却器冷却，从而O 3气体中所含的金属和氮氧化物等杂质溶解在冷凝水中。 随后，气液分离器将O 3气体与冷凝水分离。 水蒸汽再次与O3气体混合。 混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

公开(公告)号：US20070107751A1

公开(公告)日：2007-05-17

申请号：US10581729

申请日：2004-12-16

申请人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

发明人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

IPC分类号： B08B7/04 ,  C23G1/00 ,  B08B3/00

CPC分类号： H01L21/68721 ,  B01D53/002 ,  B01D2257/106 ,  C01B13/10 ,  H01L21/6715 ,  H01L21/68742 ,  H01L21/68785

摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

摘要翻译： 将水蒸汽与由放电型臭氧发生器产生的O 3气体混合。 混合流体由冷却器冷却，由此含有的O 3 3气体中的杂质如金属和氮氧化物溶解在冷凝水中。 随后，气液分离器从冷凝水中分离出O 3 N 3气体。 水蒸汽再次与O 3 3气体混合。 混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

公开(公告)号：US07731799B2

公开(公告)日：2010-06-08

申请号：US10579423

申请日：2004-12-07

申请人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

发明人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： B08B3/08

CPC分类号： G03F7/427 ,  H01L21/31138

摘要： A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

摘要翻译： 从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。 由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。 此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

公开(公告)号：US20070074747A1

公开(公告)日：2007-04-05

申请号：US10579423

申请日：2004-12-07

申请人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

发明人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： B08B3/00

CPC分类号： G03F7/427 ,  H01L21/31138

摘要： A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

摘要翻译： 从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。 由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。 此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

公开(公告)号：US07693597B2

公开(公告)日：2010-04-06

申请号：US11244684

申请日：2005-10-05

申请人： Mitsunori Nakamori ,  Tadashi Iino ,  Noritaka Uchida ,  Takehiko Orii

发明人： Mitsunori Nakamori ,  Tadashi Iino ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： G06F19/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/44

CPC分类号： G03F7/423 ,  G03F7/42 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67178

摘要： A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented, and processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.

摘要翻译： 一种用于从其上形成有抗蚀剂膜的基板去除抗蚀剂膜的基板处理方法包括通过将基板放置在室中来将室的内部区域保持在规定温度，通过将臭氧和水蒸气供给而使抗蚀剂膜变性 这样一种方式是将臭氧以规定的流量供给到室中，同时将臭氧量相对于水蒸气量调节到室内的露点形成， 并用规定的液体材料处理基板，以从基板上除去变性的抗蚀剂膜。

公开(公告)号：US20060079096A1

公开(公告)日：2006-04-13

申请号：US11244684

申请日：2005-10-05

申请人： Mitsunori Nakamori ,  Tadashi Iino ,  Noritaka Uchida ,  Takehiko Orii

发明人： Mitsunori Nakamori ,  Tadashi Iino ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/423 ,  G03F7/42 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67178

摘要： A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented, and processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.

摘要翻译： 一种用于从其上形成有抗蚀剂膜的基板去除抗蚀剂膜的基板处理方法包括通过将基板放置在室中来将室的内部区域保持在规定温度，通过将臭氧和水蒸气供给而使抗蚀剂膜变性 这样一种方式是将臭氧以规定的流量供给到室中，同时将臭氧量相对于水蒸气量调节到室内的露点形成， 并用规定的液体材料处理基板，以从基板上除去变性的抗蚀剂膜。

公开(公告)号：US06979655B2

公开(公告)日：2005-12-27

申请号：US10295041

申请日：2002-11-15

申请人： Takayuki Niuya ,  Takehiko Orii ,  Hiroyuki Mori ,  Hiroshi Yano ,  Mitsunori Nakamori

发明人： Takayuki Niuya ,  Takehiko Orii ,  Hiroyuki Mori ,  Hiroshi Yano ,  Mitsunori Nakamori

IPC分类号： H01L21/304 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/461 ,  H01I21/302

CPC分类号： H01L21/31133 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/76814

摘要： A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and the polymer layer is changed. Next, a second processing liquid, typically including a dimethyl sulfoxide and an amine solvent, is fed to the substrate, thereby the resist film and the polymer layer is dissolved and lifted off from the substrate. A sputtered copper particles included in the polymer layer can also be removed.

摘要翻译： 可以通过根据本发明的方法去除粘附在半导体衬底上的抗蚀剂膜和聚合物层。 通常包含氧化剂如过氧化氢溶液的第一处理液体被供给至基板，从而改变了抗蚀剂膜和聚合物层的状态。 接下来，将通常包含二甲基亚砜和胺溶剂的第二处理液体供给到基板，从而将抗蚀剂膜和聚合物层溶解并从基板剥离。 包含在聚合物层中的溅射铜颗粒也可以被去除。

公开(公告)号：US09095953B2

公开(公告)日：2015-08-04

申请号：US13158600

申请日：2011-06-13

申请人： Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii ,  Takanori Miyazaki ,  Nobuhiko Mouri

发明人： Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii ,  Takanori Miyazaki ,  Nobuhiko Mouri

IPC分类号： B24B7/22 ,  B24B51/00 ,  B24B37/04

CPC分类号： B24B37/042

摘要： Provided are a rear substrate surface polishing device polishing a rear surface of a substrate, a rear substrate surface polishing system including the rear substrate surface polishing device, a rear substrate surface polishing method used in the rear substrate surface polishing device, and a storage medium for storing a program implemented with the rear substrate surface polishing method. In particular, the rear surface of the substrate is polished by a substrate polishing unit in accordance with information acquired from a prior process performed prior to the polishing process of the rear surface of the substrate at the substrate polishing unit. Further, the substrate polishing unit polishes the substrate with a polishing area determined on the basis of information acquired from a prior process. Furthermore, the polishing is performed by using any one or all of a plurality of substrate polishing units determined on the basis of information acquired from a prior process.

摘要翻译： 提供了研磨基板的背面的背面基板表面研磨装置，具有背面基板表面研磨装置的背面基板表面研磨系统，后方基板表面研磨装置所使用的背面基板表面研磨方法以及用于 存储利用后衬底表面抛光方法实现的程序。 特别地，基板抛光单元根据在基板抛光单元的基板的后表面的抛光处理之前执行的先前处理获得的信息来抛光基板的后表面。 此外，基板抛光单元用基于从先前处理获得的信息确定的抛光区域对基板进行抛光。 此外，通过使用基于从先前方法获取的信息确定的多个基板抛光单元中的任何一个或全部来进行抛光。

公开(公告)号：US08978671B2

公开(公告)日：2015-03-17

申请号：US13332652

申请日：2011-12-21

申请人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

发明人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

IPC分类号： B08B3/00 ,  H01L21/67

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

摘要翻译： 一种设备，包括：处理液供应单元; 挥发性处理液体供应单元; 基板加热单元; 以及控制器，用于控制所述挥发性处理液体供应单元和所述基板加热单元，其中所述控制器执行将处理液体供应到所述基板的处理，对其上形成有所述处理液体的液体膜的基板进行加热的处理， 提供挥发性处理液的处理，停止供给挥发性处理液的处理，以及通过除去挥发性处理液来干燥基板的工序，并且，在供给工序之前开始加热基板 并且所述基板加热单元加热所述基板，使得所述基板的表面温度高于在所述基板的表面从所述挥发性处理液体露出之前的露点。

公开(公告)号：US20120164840A1

公开(公告)日：2012-06-28

申请号：US13332652

申请日：2011-12-21

申请人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

发明人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

IPC分类号： H01L21/306 ,  B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

摘要翻译： 基板处理方法包括将处理液供给到基板上以处理基板的液体处理工序; 对形成有处理液的液膜的基板进行加热的加热工序; 向形成处理液的液膜的基板供给挥发性处理液的供给工序; 停止向基板供应挥发性处理液的停止处理; 以及通过除去挥发性处理液体而干燥基板的干燥工序，其中加热过程在供应挥发性处理液和基板的供应过程开始之前开始，使得基板的表面温度高于露点 在基板的表面从挥发性处理液体露出之前。