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    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method
    3.
    发明授权
    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
    基板清洁装置，基板清洗方法和用于该方法的记录程序的介质

    公开(公告)号：US07803230B2

    公开(公告)日：2010-09-28

    申请号：US10593560

    申请日：2005-04-05

    申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    IPC分类号： B08B7/00

    CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

    摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

    摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置 由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method
    5.
    发明申请
    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
    基板清洁装置，基板清洗方法和用于该方法的记录程序的介质

    公开(公告)号：US20070175501A1

    公开(公告)日：2007-08-02

    申请号：US10593560

    申请日：2005-04-05

    申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

    摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

    摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。 由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

    Substrate processing method and substrate processing apparatus
    6.
    发明授权
    Substrate processing method and substrate processing apparatus 失效
    基板处理方法和基板处理装置

    公开(公告)号：US06513537B1

    公开(公告)日：2003-02-04

    申请号：US09702679

    申请日：2000-11-01

    申请人： Takehiko Orii ,  Hiroki Ohno ,  Takashi Yabuta

    发明人： Takehiko Orii ,  Hiroki Ohno ,  Takashi Yabuta

    IPC分类号： B08B600

    CPC分类号： H01L21/02071 ,  G03F7/405 ,  H01L21/6708 ,  H01L21/76814

    摘要： The present invention relates to a method of removing a polymer veil and a metal contamination deposited on a substrate having a metal layer. First, the polymer veils are removed by a chemical liquid in an inert gas atmosphere. Subsequently, the metal contamination are removed by oxidizing the metal contamination into metal oxide contamination by mixing oxygen in a small concentration in the inert gas atmosphere, and dissolving the metal oxide contamination by the chemical liquid.

    摘要翻译： 本发明涉及去除聚合物面纱和沉积在具有金属层的基底上的金属污染物的方法。 首先，通过化学液体在惰性气体气氛中除去聚合物面纱。 随后，通过在惰性气体气氛中混合少量氧气并将金属氧化物污染物溶解在化学液体中，将金属污染物氧化成金属氧化物污染物，去除金属污染物。

    Liquid processing method, liquid processing apparatus and storage medium
    8.
    发明授权
    Liquid processing method, liquid processing apparatus and storage medium 有权
    液体处理方法，液体处理装置和储存介质

    公开(公告)号：US08747689B2

    公开(公告)日：2014-06-10

    申请号：US13355709

    申请日：2012-01-23

    申请人： Hiroki Ohno ,  Takehiko Orii

    发明人： Hiroki Ohno ,  Takehiko Orii

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31111 ,  H01L21/6708

    摘要： There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide, and a storage medium storing the method thereon. In the method for etching, by an etching solution, a substrate on which silicon nitride and silicon oxide are exposed, the etching solution is produced by mixing a fluorine ion source material, water and a boiling point adjusting agent; the produced etching solution is heated to a substrate processing temperature equal to or higher than 140° C.; after a temperature of the etching solution reaches the substrate processing temperature, the temperature of the etching solution is maintained at the substrate processing temperature for a first preset time; and after a lapse of the first preset time, the substrate is etched by the etching solution maintained at the substrate processing temperature.

    摘要翻译： 提供了一种液体处理方法和液体处理装置，其能够提供氮化硅相对于氧化硅的高蚀刻速率和高蚀刻选择性，以及在其上存储该方法的存储介质。 在蚀刻方法中，通过蚀刻溶液，暴露有氮化硅和氧化硅的衬底，通过混合氟离子源材料，水和沸点调节剂来制备蚀刻溶液; 将生成的蚀刻溶液加热到140℃以上的基板处理温度。 在蚀刻溶液的温度达到基板处理温度之后，将蚀刻溶液的温度保持在基板处理温度第一预设时间; 在经过第一预设时间之后，通过保持在衬底处理温度的蚀刻溶液来蚀刻衬底。

    Supercritical drying method and apparatus for semiconductor substrates
    9.
    发明授权
    Supercritical drying method and apparatus for semiconductor substrates 有权
    半导体衬底的超临界干燥方法和装置

    公开(公告)号：US08372212B2

    公开(公告)日：2013-02-12

    申请号：US13369970

    申请日：2012-02-09

    申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

    发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

    IPC分类号： B08B3/04

    CPC分类号： F26B3/02

    摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

    摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

    Substrate Processing Method and Substrate Processing Apparatus
    10.
    发明申请
    Substrate Processing Method and Substrate Processing Apparatus 有权
    基板加工方法及基板加工装置

    公开(公告)号：US20070223342A1

    公开(公告)日：2007-09-27

    申请号：US11578099

    申请日：2005-10-12

    申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    IPC分类号： C23F1/00 ,  G11B31/00 ,  H01L21/306

    CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

    摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

    摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。