摘要:
Solid tin (Sn) is used as a target, a CO2 laser is used as an excitation source for the target, and after the size of debris emitted from plasma is decreased to a nanometer or smaller size by exciting the solid tin by a laser beam outputted from the CO2 laser, the emitted debris of a nanometer or smaller size is acted upon so as not to reach the optical element. In accordance with the present invention, in the EUV light source apparatus, the debris emitted together with EUV light from plasma generated by exciting a target within a chamber by a laser beam is prevented from adhering to an optical element provided within the chamber and forming a metal film. As a result, the service life of the optical element can be extended.
摘要:
Solid tin (Sn) is used as a target, a CO2 laser is used as an excitation source for the target, and after the size of debris emitted from plasma is decreased to a nanometer or smaller size by exciting the solid tin by a laser beam outputted from the CO2 laser, the emitted debris of a nanometer or smaller size is acted upon so as not to reach the optical element. In accordance with the present invention, in the EUV light source apparatus, the debris emitted together with EUV light from plasma generated by exciting a target within a chamber by a laser beam is prevented from adhering to an optical element provided within the chamber and forming a metal film. As a result, the service life of the optical element can be extended.
摘要:
A method for cleaning an optical element of an extreme ultraviolet light source device for removing, from the optical element in a chamber, scattered matter generated together with extreme ultraviolet light by plasma formed through laser beam excitation of a target in the chamber, the method which comprises: making the scattered matter generated by the plasma no larger than nanosize by using solid tin as the target and using a CO2 laser as an excitation source of the solid tin; and imparting, to the scattered matter no larger than the nanosize adhered to the optical element, an effect of overcoming the adherence of the scattered matter.
摘要:
A method for cleaning an optical element of an extreme ultraviolet light source device for removing, from the optical element in a chamber, scattered matter generated together with extreme ultraviolet light by plasma formed through laser beam excitation of a target in the chamber, the method which comprises: making the scattered matter generated by the plasma no larger than nanosize by using solid tin as the target and using a CO2 laser as an excitation source of the solid tin; and imparting, to the scattered matter no larger than the nanosize adhered to the optical element, an effect of overcoming the adherence of the scattered matter.
摘要:
A method for cleaning an optical element of an extreme ultraviolet light source device for removing, from the optical element in a chamber, scattered matter generated together with extreme ultraviolet light by plasma formed through laser beam excitation of a target in the chamber, the method which comprises: making the scattered matter generated by the plasma no larger than nanosize by using solid tin as the target and using a CO2 laser as an excitation source of the solid tin; and imparting, to the scattered matter no larger than the nanosize adhered to the optical element, an effect of overcoming the adherence of the scattered matter.
摘要:
An EUV (Extreme Ultra Violet) light source device ionizes a target material in an ionizer, and supplies the ionized target material to a point of generating a plasma. This reduces the generation of debris. The ionizer simultaneously irradiates laser beams of plural wavelengths corresponding to the excited level of tin on a target material to ionize the target material. The ionized target material is extracted from the ionizer with a high voltage applied from an ion beam extractor, and accelerated and supplied to a plasma generation chamber. When driver laser beam is irradiated on the ionized target material, a plasma is generated, thereby emitting EUV radiation.
摘要:
In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend.
摘要:
In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The apparatus includes a chamber, a target supply unit for supplying a target material into the chamber, a collector mirror for collecting extreme ultra violet light radiated from plasma generated by irradiating the target material with a laser beam to output the extreme ultra violet light, an electromagnet arranged outside of the chamber, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the electromagnet extend.
摘要:
An EUV (Extreme Ultra Violet) light source device ionizes a target material in an ionizer, and supplies the ionized target material to a point of generating a plasma. This reduces the generation of debris. The ionizer simultaneously irradiates laser beams of plural wavelengths corresponding to the excited level of tin on a target material to ionize the target material. The ionized target material is extracted from the ionizer with a high voltage applied from an ion beam extractor, and accelerated and supplied to a plasma generation chamber. When driver laser beam is irradiated on the ionized target material, a plasma is generated, thereby emitting EUV radiation.
摘要:
In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend.