公开(公告)号：US20100291878A1

公开(公告)日：2010-11-18

申请号：US12778237

申请日：2010-05-12

申请人： Yoshihito SATO ,  Kenji Imamoto ,  Yoshinori Okura

发明人： Yoshihito SATO ,  Kenji Imamoto ,  Yoshinori Okura

IPC分类号： H04B17/00

CPC分类号： H04W16/18 ,  G01S5/0205 ,  G01S5/0273 ,  H04W64/00

摘要： A technique is offered which is adapted for optimization computations and which makes it possible to carry out an estimation of the state of propagation of radio waves quickly and accurately during a search for the locations of wireless stations. During the optimization computations, sending points and receiving points are set using a parameter search technique. Propagation paths are computed using a far-field approximation technique for Maxwell's equations. A propagation path leading to a local area where the accuracy is low with the far-field approximation technique is extracted from the computed paths. The state of scattering previously calculated using a numerical analysis technique for Maxwell's equations is reflected in the extracted path to modify the propagation path. The communication characteristics of the modified path are evaluated. The steps S101-S105 are performed repeatedly a given number of times. A sending point and a receiving point producing optimum communication characteristics are output.

摘要翻译： 提供了适用于优化计算的技术，并且使得可以在搜索无线站的位置期间快速且准确地执行无线电波的传播状态的估计。 在优化计算过程中，使用参数搜索技术设置发送点和接收点。 使用麦克斯韦方程的远场近似技术计算传播路径。 从计算出的路径中提取通过远场近似技术导致精度低的局部区域的传播路径。 以前使用马克斯韦方程的数值分析技术计算的散射状态反映在提取的修改传播路径的路径中。 评估修改路径的通信特性。 重复执行步骤S101〜S105给定次数。 输出产生最佳通信特性的发送点和接收点。

公开(公告)号：US08285219B2

公开(公告)日：2012-10-09

申请号：US12778237

申请日：2010-05-12

申请人： Yoshihito Sato ,  Kenji Imamoto ,  Yoshinori Okura

发明人： Yoshihito Sato ,  Kenji Imamoto ,  Yoshinori Okura

IPC分类号： H04B17/00 ,  H04W40/00

CPC分类号： H04W16/18 ,  G01S5/0205 ,  G01S5/0273 ,  H04W64/00

摘要： A technique is offered which is adapted for optimization computations and which makes it possible to carry out an estimation of the state of propagation of radio waves quickly and accurately during a search for the locations of wireless stations. During the optimization computations, sending points and receiving points are set using a parameter search technique. Propagation paths are computed using a far-field approximation technique for Maxwell's equations. A propagation path leading to a local area where the accuracy is low with the far-field approximation technique is extracted from the computed paths. The state of scattering previously calculated using a numerical analysis technique for Maxwell's equations is reflected in the extracted path to modify the propagation path. The communication characteristics of the modified path are evaluated. The steps S101-S105 are performed repeatedly a given number of times. A sending point and a receiving point producing optimum communication characteristics are output.

摘要翻译： 提供了适用于优化计算的技术，并且使得可以在搜索无线站的位置期间快速且准确地执行无线电波的传播状态的估计。 在优化计算过程中，使用参数搜索技术设置发送点和接收点。 使用麦克斯韦方程的远场近似技术计算传播路径。 从计算出的路径中提取通过远场近似技术导致精度低的局部区域的传播路径。 以前使用马克斯韦方程的数值分析技术计算的散射状态反映在提取的修改传播路径的路径中。 评估修改路径的通信特性。 重复执行步骤S101〜S105给定次数。 输出产生最佳通信特性的发送点和接收点。

公开(公告)号：US20100285669A1

公开(公告)日：2010-11-11

申请号：US12512103

申请日：2009-07-30

申请人： Takeshi SHIMA ,  Kenichi Kuwabara ,  Tomoyoshi Ichimaru ,  Kenji Imamoto

发明人： Takeshi SHIMA ,  Kenichi Kuwabara ,  Tomoyoshi Ichimaru ,  Kenji Imamoto

IPC分类号： H01L21/3065

CPC分类号： H01L21/32139 ,  H01L21/02071 ,  H01L21/02115 ,  H01L21/02274

摘要： After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching condition in which volatility is improved due to the rise in a wafer temperature or the low pressure of a processing pressure, thereby preventing a side etching and unevenness of a sidewall of the polysilicon film. Further, by using the protective film made of a carbon polymer, metallic substances scattered at the time of etching the metallic material are not directly attached to the polysilicon film, but can be simply removed along with the protective film made of a carbon polymer in an asking step.

摘要翻译： 在蚀刻多晶硅膜之后，当使用含有碳的等离子体在多晶硅膜的侧壁上形成由碳聚合物制成的保护膜时，在蚀刻条件下，使用含有卤素气体的等离子体蚀刻作为下部膜的金属材料，其中 由于晶片温度的上升或处理压力的低压，挥发性提高，从而防止多晶硅膜的侧壁蚀刻和不均匀。 此外，通过使用由碳聚合物制成的保护膜，在蚀刻金属材料时分散的金属物质不直接附着在多晶硅膜上，而是可以简单地与由碳聚合物制成的保护膜一起除去 问一步

公开(公告)号：US20060143453A1

公开(公告)日：2006-06-29

申请号：US10518499

申请日：2003-06-19

申请人： Kenji Imamoto ,  Katsuyoshi Okawa ,  Tsutomu Hashimoto

发明人： Kenji Imamoto ,  Katsuyoshi Okawa ,  Tsutomu Hashimoto

IPC分类号： H04L9/00

CPC分类号： H04L63/067 ,  H04L9/0891 ,  H04L9/3273 ,  H04L63/0869

摘要： An objective of the present invention is to obtain a mutual authentication method in which mutual authentication is carried out securely and conveniently. In order to achieve the above objective, in the mutual authentication process, a private key K0, being an initial value, is stored in a client and a server (Pc0, Ps0). The client generates a random number R, calculates secret data C and authentication data A, and transmits the data items to the server (Pc1). The server receives the authentication data A and the secret data C from the client, and generates a random number Q, calculates secret data S, and authentication data B and returns the data items, as well as updating the private key K0 with a private key K1 (Ps1). The client receives from the server the authentication data B and the secret data S, generates the random number R, calculates secret data C2, authentication data A2, and returns the data items to the server, and updates the private key K0 with the private key K1(Pc2). The client and the server check whether or not validity is established (Psm+1, Pcm+1). Further in the authentication method above, there is a method for generating a onetime ID, assuming that the onetime ID is identification information usable just one time in the authentication between a plurality of devices or application. In each of the devices or applications which carries out the authentication, a variable shared key which changes per predefined communication unit requiring the authentication is generated, a function value of one-way function is obtained in which the variable shared key is used as an argument, a onetime ID hard to tap and superior in security is generated based on the function value, and the onetime ID is utilized.

公开(公告)号：US08924050B2

公开(公告)日：2014-12-30

申请号：US13550747

申请日：2012-07-17

申请人： Keiichi Katsuta ,  Yoichi Sugita ,  Keiji Maekawa ,  Naoki Shibata ,  Kenji Imamoto ,  Motonari Suzuki

发明人： Keiichi Katsuta ,  Yoichi Sugita ,  Keiji Maekawa ,  Naoki Shibata ,  Kenji Imamoto ,  Motonari Suzuki

IPC分类号： G05D1/00 ,  B61L27/00

CPC分类号： B61L27/0061 ,  B61L15/0063 ,  B61L2027/0044

摘要： In a railway signalling system which transmits a control order to an on-board signalling system by a trackside signalling system, the on-board signalling system being mounted on a train running on a line and the control order being compliant with a signalling system of the line, the present invention allows the train to run through into lines with different signalling systems using a single on-board signalling system. When the train enters a line with a different signalling system from a current line, the on-board signalling system installs a train control application program compliant with the signalling system of the entering line. Then, the on-board signalling system executes the train control application program, allowing the train to be controlled on the entering line according to a control order created by the trackside signalling system of the entering line.

摘要翻译： 在由轨道信号系统向车载信号系统发送控制命令的铁路信号系统中，车载信号系统安装在一条在线路上运行的列车上，并且该控制命令符合该信令系统的信令系统 本发明允许列车使用单个车载信令系统在不同的信令系统中进入线路。 当列车从当前线路进入与不同信号系统的线路时，车载信号系统安装符合输入线路的信令系统的列车控制应用程序。 然后，车载信号系统执行列车控制应用程序，根据由进入线路的轨迹信号系统创建的控制顺序，允许在进入线路上控制列车。

公开(公告)号：US07989330B2

公开(公告)日：2011-08-02

申请号：US12512103

申请日：2009-07-30

申请人： Takeshi Shima ,  Kenichi Kuwabara ,  Tomoyoshi Ichimaru ,  Kenji Imamoto

发明人： Takeshi Shima ,  Kenichi Kuwabara ,  Tomoyoshi Ichimaru ,  Kenji Imamoto

IPC分类号： H01L21/20

CPC分类号： H01L21/32139 ,  H01L21/02071 ,  H01L21/02115 ,  H01L21/02274

摘要： After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching condition in which volatility is improved due to the rise in a wafer temperature or the low pressure of a processing pressure, thereby preventing a side etching and unevenness of a sidewall of the polysilicon film. Further, by using the protective film made of a carbon polymer, metallic substances scattered at the time of etching the metallic material are not directly attached to the polysilicon film, but can be simply removed along with the protective film made of a carbon polymer in an asking step.

摘要翻译： 在蚀刻多晶硅膜之后，当使用含有碳的等离子体在多晶硅膜的侧壁上形成由碳聚合物制成的保护膜时，在蚀刻条件下，使用含有卤素气体的等离子体蚀刻作为下部膜的金属材料，其中 由于晶片温度的上升或处理压力的低压，挥发性提高，从而防止多晶硅膜的侧壁蚀刻和不均匀。 此外，通过使用由碳聚合物制成的保护膜，在蚀刻金属材料时分散的金属物质不直接附着于多晶硅膜，而是可以简单地与由碳聚合物制成的保护膜一起除去 问一步

公开(公告)号：US20080076259A1

公开(公告)日：2008-03-27

申请号：US11622525

申请日：2007-01-12

申请人： Yoshiyuki OOTA ,  Tsuyoshi Yoshida ,  Eiji Ikegami ,  Kenji Imamoto ,  Jyunji Adachi

发明人： Yoshiyuki OOTA ,  Tsuyoshi Yoshida ,  Eiji Ikegami ,  Kenji Imamoto ,  Jyunji Adachi

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： The invention provides a plasma etching method that does not create any difference in profile between sparse and dense portions of the mask pattern in processing a device having a space width equal to or smaller than 100 nm. An added gas having a high C/F ratio such as C4F8 gas capable of increasing the generation of CF2 radicals that may become sidewall protection film components having a small attachment coefficient is added to the etching gas in order to form sidewall protection films on dense pattern portions, and in addition, Xe gas is added in order to suppress dissociation effect by lowering the electron temperature.

摘要翻译： 本发明提供一种等离子体蚀刻方法，其在处理具有等于或小于100nm的空间宽度的器件时，不会在掩模图案的稀疏部分和致密部分之间产生任何差异。 具有高C / F比例的添加气体，例如可以增加CF 2 N 2基团的产生的C 4 F 8 N 2气体，其可以变成 在蚀刻气体中添加具有小附着系数的侧壁保护膜成分，以在密集图案部分上形成侧壁保护膜，另外，为了通过降低电子温度来抑制解离效果，另外添加Xe气体。