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    GENETIC MARKER SELECTION PROGRAM FOR GENETIC DIAGNOSIS, APPARATUS AND SYSTEM FOR EXECUTING THE SAME, AND GENETIC DIAGNOSIS SYSTEM
    1.
    发明申请
    GENETIC MARKER SELECTION PROGRAM FOR GENETIC DIAGNOSIS, APPARATUS AND SYSTEM FOR EXECUTING THE SAME, AND GENETIC DIAGNOSIS SYSTEM 审中-公开
    用于遗传诊断的遗传标记选择程序，用于执行其的装置和系统以及遗传诊断系统

    公开(公告)号：US20070082353A1

    公开(公告)日：2007-04-12

    申请号：US11533134

    申请日：2006-09-19

    申请人： Yoshiko Hiraoka ,  Kazunori Miyazaki ,  Satoshi Itoh ,  Michie Hashimoto ,  Shunji Mishiro

    发明人： Yoshiko Hiraoka ,  Kazunori Miyazaki ,  Satoshi Itoh ,  Michie Hashimoto ,  Shunji Mishiro

    IPC分类号： C12Q1/68 ,  G06F19/00

    CPC分类号： G16B50/00 ,  G16B20/00

    摘要： There is provided a marker selection program for selecting a marker for use in genetic diagnosis. In the program, analysis is carried out by using at least two specimen databases which respectively store data of specimens belonging different populations. By carrying out analysis without integrating all specimen data into single population, information on a minority population can be surely reflected to a gene search. Since the characteristics of each population can be reflected, high-accuracy diagnosing functions can be obtained, providing a practical diagnosing system.

    摘要翻译： 提供了用于选择用于遗传诊断的标记物的标记选择程序。 在程序中，通过使用至少两个分别存储属于不同种群的标本的数据的样本数据库进行分析。 通过进行分析，不将所有样本数据整合到单个人群中，少数民族的信息可以肯定地反映到基因检索中。 由于能反映每个人群的特点，可以获得高精度诊断功能，提供实用的诊断系统。

    SOLID CATALYSTS AND FUEL CELL EMPLOYING THE SOLID CATALYSTS
    4.
    发明申请
    SOLID CATALYSTS AND FUEL CELL EMPLOYING THE SOLID CATALYSTS 有权
    固体催化剂和燃料电池采用固体催化剂

    公开(公告)号：US20090136826A1

    公开(公告)日：2009-05-28

    申请号：US12323244

    申请日：2008-11-25

    申请人： Takashi Yoshida ,  Fumihiko Aiga ,  Satoshi Itoh ,  Yoshiko Hiraoka ,  Reiko Yoshimura ,  Tsukasa Tada

    发明人： Takashi Yoshida ,  Fumihiko Aiga ,  Satoshi Itoh ,  Yoshiko Hiraoka ,  Reiko Yoshimura ,  Tsukasa Tada

    IPC分类号： H01M4/38 ,  B01J23/42

    CPC分类号： H01M4/92 ,  H01M4/921 ,  H01M8/1011 ,  H01M2008/1095 ,  Y02E60/523 ,  Y10T428/12 ,  Y10T428/12493

    摘要： A solid catalyst having a close-packed structure has basic structural units present in the surface of the solid catalyst, the basic structural units including (i) a triangular lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the triangular lattice so that each atom of one of the elements adjoins atoms of the other elements or (ii) a rhombic lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the rhombic lattice in an atomic ratio of 1:2:1 so that each ruthenium atom directly adjoins a platinum atom and an atom of the additional element; and a fuel cell includes either of the solid catalyst as an anode-side electrode catalyst.

    摘要翻译： 具有密堆积结构的固体催化剂具有存在于固体催化剂表面的碱性结构单元，其基本结构单元包括（i）由铂原子，钌和至少一种另外的元素构成的三角形晶格， 在三角形格子中的顶点处，使得一个元件的每个原子与其他元素的原子相邻，或者（ii）由铂，钌和至少一个附加元素构成的菱形晶格，其被设置在顶点处 原子比为1:2:1的菱形晶格，使得每个钌原子直接毗邻铂原子和附加元素的原子; 并且燃料电池包括作为阳极侧电极催化剂的固体催化剂中的任一种。

    METHOD OF RECOVERING NOBLE METALS AND RECOVERING SYSTEM FOR NOBLE METALS
    6.
    发明申请
    METHOD OF RECOVERING NOBLE METALS AND RECOVERING SYSTEM FOR NOBLE METALS 审中-公开
    回收金属的方法和用于金属的回收系统

    公开(公告)号：US20090257931A1

    公开(公告)日：2009-10-15

    申请号：US12490563

    申请日：2009-06-24

    申请人： Yoshihiko Nakano ,  Jun Tamura ,  Kazuhiro Yasuda ,  Mutsuki Yamazaki ,  Itsuko Mizutani ,  Yoshiko Hiraoka

    发明人： Yoshihiko Nakano ,  Jun Tamura ,  Kazuhiro Yasuda ,  Mutsuki Yamazaki ,  Itsuko Mizutani ,  Yoshiko Hiraoka

    IPC分类号： C01G55/00

    CPC分类号： C22B11/048 ,  C22B3/08 ,  C22B3/165 ,  C22B3/22 ,  C22B3/44 ,  C22B7/006 ,  C22B7/007 ,  Y02P10/214 ,  Y02P10/234

    摘要： A recovering method is provided, which includes contacting a solid component containing Ru with an aqueous solution to create a Ru compound, and causing the Ru compound to selectively elute in the aqueous solution. The aqueous solution is formed of at least one selected from the group consisting of aqueous solutions A, B, C, D, and E. The aqueous solution A comprises an acid and formic acid, alcohols, aldehydes, a compound having a hemiacetal structure or a compound having an acetal structure. The aqueous solution B comprises an acid and a compound which creates, in the coexistence thereof with the acid, formic acid, alcohols, aldehydes, a compound having a hemiacetal structure or a compound having an acetal structure. The aqueous solution C comprises an acid and sugars. The aqueous solution D comprises formic acid, and the aqueous solution E comprises oxalic acid.

    摘要翻译： 提供一种回收方法，其包括将含有Ru的固体组分与水溶液接触以产生Ru化合物，并使Ru化合物在水溶液中选择性洗脱。 水溶液由选自水溶液A，B，C，D和E中的至少一种形成。水溶液A包含酸和甲酸，醇，醛，具有半缩醛结构的化合物或 具有缩醛结构的化合物。 水溶液B包含与酸，甲酸，醇，醛，具有半缩醛结构的化合物或具有缩醛结构的化合物共存的酸和化合物。 水溶液C包含酸和糖。 水溶液D含有甲酸，水溶液E含有草酸。

    Si-SiGe semiconductor device and method of fabricating the same
    7.
    发明授权
    Si-SiGe semiconductor device and method of fabricating the same 失效
    Si-SiGe半导体器件及其制造方法

    公开(公告)号：US5847419A

    公开(公告)日：1998-12-08

    申请号：US931411

    申请日：1997-09-16

    申请人： Seiji Imai ,  Yoshiko Hiraoka ,  Atsushi Kurobe ,  Naoharu Sugiyama ,  Tsutomu Tezuka

    发明人： Seiji Imai ,  Yoshiko Hiraoka ,  Atsushi Kurobe ,  Naoharu Sugiyama ,  Tsutomu Tezuka

    IPC分类号： H01L27/06 ,  H01L27/092 ,  H01L29/786 ,  H01L29/161

    CPC分类号： H01L29/78654 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/0922

    摘要： A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second semiconductor layer in a lattice-relaxation condition formed on the first semiconductor layer in a region other than the predetermined region with an insulating film lying therebetween, wherein the insulating film has an opening and the first and second semiconductor layers are connected through the opening, a third semiconductor layer under tensile strain formed on the second semiconductor layer, and an n-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in the third semiconductor layer.

    摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的压缩应变下的第一半导体层，形成在第一半导体层的预定区域中的p型MISFET（金属绝缘体半导体场效应晶体管），第二半导体层 形成在第一半导体层上的除了预定区域之外的区域中的绝缘膜的晶格弛豫状态，其中绝缘膜具有开口，并且第一和第二半导体层通过开口连接，第三半导体层 在第二半导体层上形成的拉伸应变下，形成在第三半导体层中的n型MISFET（金属绝缘子半导体场效应晶体管）。