摘要:
A cooperative system includes a plurality of information systems and a hub system connected to the plurality of systems. The hub system receives a message from a first information system, determines necessity of message conversion and a kind of conversion, converts the message to a form suitable for a second information system which is destination, only when message conversion is necessary, and transmits the message to a second information system. The hub system may determine whether flow control determining a flow and destination of a message received from the first information system based on a class of the message should be conducted, and conduct flow control only when it has been determined that flow control should be conducted.
摘要:
In a transaction processing method for executing a series of a plurality of transactions in accordance with a workflow, compensation processing is registered as an error recovery flow when each transaction is executed, the compensation processing executing error recovery processing when an error occurs while the transaction is executed, and a series of compensation processing is executed in parallel in accordance with the registered error recovery flow when an error occurs while any of the transaction is executed.
摘要:
A memory device includes: a memory unit in which an electric charge discharging rate between two electrodes is different in accordance with logic of stored information; a sense amplifier that detects the logic of the information by comparing a discharge electric potential of a wiring to which one electrode of the memory unit is connected with a reference electric potential; and a replica circuit that has a replica unit emulating the memory unit and controls a sense timing of the sense amplifier in accordance with a discharge rate of the replica unit.
摘要:
A storage apparatus includes: a plurality of storage elements configured to have the resistance state thereof changed in accordance with an applied voltage; and a drive portion configured to perform a resistance change operation and a read operation, the resistance change operation involving writing or erasing information to or from the storage elements by changing the resistance state thereof, the read operation involving reading the information from the storage elements; wherein the drive portion includes an amplifier configured to output a read signal upon execution of the read operation, a constant current load, and a control portion configured to perform the resistance change operation and a direct verify operation on the storage elements, the direct verify operation involving carrying out, subsequent to the resistance change operation, the read operation for verifying whether the writing or erasing of the information to or from the storage elements has been normally accomplished.
摘要:
Disclosed herein is a nonvolatile semiconductor memory device including a plurality of memory cells; and a driver circuit configured to perform a verify write operation in a cycle including selecting from an array of the plurality of memory cells a predetermined number of memory cells constituting a write cell unit, writing data collectively to the predetermined number of memory cells, and verifying the written data, the driver circuit further performing the verify write operation repeatedly until all memory cells within the write cell unit are found to have passed the verification.
摘要:
A resistance random access change memory device includes: a memory cell array in which plural memory cells having current paths with series-connected access transistors and variable resistive elements are two-dimensionally arranged; plural bit lines that connect one ends of the current paths; plural source lines that connect the other ends of the current paths; and plural word lines that control conduction and non-conduction of the access transistors, wherein bit line contacts are shared between two memory cells to which the word lines are adjacently provided, and pairs of memory cells are formed, all of the pairs of memory cells connected to the adjacent two bit lines are connected to the corresponding source lines via individual source line contacts, and the source lines are formed by a wiring layer upper than that of the bit lines with a larger pitch than that of the bit lines.
摘要:
Disclosed herein is a semiconductor memory device including: a bit line and a sense line; a data storage element having a data storage state changing in accordance with a voltage applied to the bit line; a first switch for controlling connection of the sense line to the bit line; a data latch circuit having a second data holding node and a first data holding node connected to the sense line; and a second switch for controlling connection of the second data holding node of the data latch circuit to the bit line.
摘要:
Disclosed herein is a nonvolatile semiconductor memory device including a plurality of memory cells; and a driver circuit configured to perform a verify write operation in a cycle including selecting from an array of the plurality of memory cells a predetermined number of memory cells constituting a write cell unit, writing data collectively to the predetermined number of memory cells, and verifying the written data, the driver circuit further performing the verify write operation repeatedly until all memory cells within the write cell unit are found to have passed the verification.
摘要:
A multiplicity adjustment agent collects request information database from a sub-system including an element of a system to be monitored. An individual sub-system's multiplicity adjustment server sorts and merges request information collected from each sub-system for each element/request path. An integrated multiplicity analysis server calculates a necessary multiplicity on the basis of the request information.
摘要:
A system infrastructure structure formulation supporting method in which based on quality requirements, formulated examples of system infrastructure structures up to the present are grouped into a database for storing the system infrastructure structures, then being stored into a group management area in advance. At the time of a new formulation, demands presented with an expression which user uses are accepted from an input/output terminal. Then, the demands are converted into quality requirements of the system by making reference to a demand-contents management table, a quality-requirement management table, and a demand-quality-requirement correspondence table stored in a reference information storage area. Next, using the quality requirements acquired, a group stored in the group management area is selected. Moreover, elements within the group are selected from a grouping table, then sequentially presenting the formulated examples having high degrees of similarity.