公开(公告)号：US06456639B2

公开(公告)日：2002-09-24

申请号：US09864758

申请日：2001-05-24

申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

IPC分类号： H01S500

CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

公开(公告)号：US06414975B1

公开(公告)日：2002-07-02

申请号：US09048048

申请日：1998-03-26

申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

IPC分类号： H01S500

CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

公开(公告)号：US08044476B2

公开(公告)日：2011-10-25

申请号：US11454522

申请日：2006-06-16

申请人： Yoshinori Hatanaka ,  Toru Aoki

发明人： Yoshinori Hatanaka ,  Toru Aoki

IPC分类号： H01L31/00

CPC分类号： H01L31/115 ,  H01L27/14661 ,  H01L27/14696

摘要： A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.

摘要翻译： 一种辐射检测器，包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层， 提供在II-VI化合物半导体层上的III族元素和V族元素中的至少一种，具有与金属层上提供的第一导电类型相反的第二导电类型的IV半导体层和吸收 具有与在IV半导体层上提供的第一能量不同的第二能量的辐射。

公开(公告)号：US20070176200A1

公开(公告)日：2007-08-02

申请号：US11454522

申请日：2006-06-16

申请人： Yoshinori Hatanaka ,  Toru Aoki

发明人： Yoshinori Hatanaka ,  Toru Aoki

IPC分类号： H01L31/00 ,  H01L29/732

CPC分类号： H01L31/115 ,  H01L27/14661 ,  H01L27/14696

摘要： There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.

摘要翻译： 公开了一种辐射检测器，其包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层，金属 含有设置在II-VI化合物半导体层上的III族元素和V族元素中的至少一种的层，具有与设置在金属层上的第一导电类型相反的第二导电类型的IV半导体层和IV半导体 吸收具有与IV半导体层上提供的第一能量不同的第二能量的辐射的衬底。

公开(公告)号：US20070057190A1

公开(公告)日：2007-03-15

申请号：US10576413

申请日：2004-10-20

申请人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

发明人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

IPC分类号： G01T1/24 ,  H01L27/146 ,  H01L25/00

CPC分类号： H04N5/349 ,  H04N5/32 ,  H04N5/3651

摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

摘要翻译： 当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。 为了解决这个问题，提出了一种使电容均匀化的结构。 如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。 连接部分的宽度根据布线长度而减小，从而使电容均匀。

公开(公告)号：US07402811B2

公开(公告)日：2008-07-22

申请号：US10576413

申请日：2004-10-20

申请人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

发明人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

IPC分类号： G01T1/24

CPC分类号： H04N5/349 ,  H04N5/32 ,  H04N5/3651

摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed.If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

摘要翻译： 当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。 为了解决这个问题，提出了一种使电容均匀化的结构。 如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。 连接部分的宽度根据布线长度而减小，从而使电容均匀。

公开(公告)号：US20150054990A1

公开(公告)日：2015-02-26

申请号：US14390626

申请日：2013-02-21

申请人： Toru Aoki ,  Mitsuo Hashimoto ,  Narihiro Matoba

发明人： Toru Aoki ,  Mitsuo Hashimoto ,  Narihiro Matoba

IPC分类号： H04N5/217 ,  G06T5/20 ,  G06T5/00 ,  H04N5/232 ,  H04N5/357

CPC分类号： H04N5/2173 ,  G06T5/002 ,  G06T5/20 ,  G06T2207/10016 ,  G06T2207/20024 ,  G06T2207/20182 ,  H04N5/23229 ,  H04N5/357

摘要： An NR coefficient (Kf) is calculated on the basis of a representative value (Pm) of a pixel of interest and a low-pass filtered value (La-Ld) nearest to the representative value (Pm) of the pixel of interest among a plurality of low-pass filtered values filtered one-dimensionally in different directions in an input image, and the pixel value of the pixel of interest and a value output by a two-dimensional low-pass filter (25) are weighted by the NR coefficient (Kf) and added (36). The representative value of the pixel of interest may be for example, a median value obtained by filtering the current frame and a past frame in the time axis direction. The image processing device reduces noise without lowering resolution.

摘要翻译： 基于感兴趣像素的代表值（Pm）和最接近感兴趣像素的代表值（Pm）的低通滤波值（La-Ld）计算NR系数（Kf），其中， 在输入图像中以不同方向一维滤波的多个低通滤波值，并且将感兴趣像素的像素值和由二维低通滤波器（25）输出的值由NR系数 （Kf）并添加（36）。 感兴趣像素的代表值可以是例如通过对时间轴方向上的当前帧和过去帧进行滤波而获得的中值。 图像处理装置降低噪声而不降低分辨率。

公开(公告)号：US08184205B2

公开(公告)日：2012-05-22

申请号：US11780983

申请日：2007-07-20

申请人： Toru Aoki

发明人： Toru Aoki

IPC分类号： H04N5/14 ,  G09G5/10

CPC分类号： G09G3/3688 ,  G09G3/006 ,  G09G3/3614 ,  G09G2310/0297 ,  G09G2320/0214 ,  H04N9/312

摘要： An electro-optical device includes configuration to apply, to a plurality of the data lines through capacitors, inverted data signals that are generated by inverting voltage levels of data signals supplied to image signal lines with respect to a predetermined electric potential.

摘要翻译： 电光装置包括通过电容器向多条数据线施加反相数据信号的结构，该反相数据信号是通过反转相对于预定电位提供给图像信号线的数据信号的电压电平而产生的。

公开(公告)号：US07667676B2

公开(公告)日：2010-02-23

申请号：US10969003

申请日：2004-10-21

申请人： Toru Aoki

发明人： Toru Aoki

IPC分类号： G09G3/36

CPC分类号： G09G3/3688 ,  G09G2310/0297 ,  G09G2320/0223 ,  G09G2320/0233

摘要： Exemplary embodiments of the present invention reduce display irregularity in order to enhance display quality. A liquid crystal panel includes a plurality of pixel electrodes provided at intersections of a plurality of scanning lines and a plurality of data lines, a scanning line driving circuit to sequentially select the plurality of scanning lines, and a data line driving circuit to sample an image signal VID supplied to an image signal line that is provided in common to the plurality of data lines and to supply the sampled signal to each data line. A signal correcting circuit has a correction amount specifying circuit to specify a correction amount α of the image signal VID to be supplied to each data line based on the position of the data line with respect to the extending direction of the image signal line; and a correcting circuit to correct the image signal VID based on the correction amount α specified by the correction amount specifying circuit and to supply the corrected image signal VID to the image signal line.

摘要翻译： 本发明的示例性实施例减小了显示不规则性，以便提高显示质量。 液晶面板包括设置在多条扫描线和多条数据线的交点处的多个像素电极，顺序地选择多条扫描线的扫描线驱动电路和用于对图像进行采样的数据线驱动电路 信号VID提供给与多条数据线共同提供的图像信号线，并将采样信号提供给每条数据线。 信号校正电路具有校正量指定电路，用于根据数据线相对于图像信号线的延伸方向的位置来指定要提供给每条数据线的图像信号VID的校正量α; 以及校正电路，用于基于由校正量指定电路指定的校正量α来校正图像信号VID，并将校正后的图像信号VID提供给图像信号线。

公开(公告)号：US07602361B2

公开(公告)日：2009-10-13

申请号：US11039811

申请日：2005-01-24

申请人： Toru Aoki

发明人： Toru Aoki

IPC分类号： G09G5/10

CPC分类号： G09G3/3611 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2310/0248 ,  G09G2320/10

摘要： To improve the display quality of a moving picture by performing a hold-type display of a liquid crystal, etc. using an impulse-type response. A selection voltage is applied to a selected scanning line during an effective horizontal scan period, and a voltage corresponding to the brightness of a pixel corresponding to an intersection with the selected scanning line is applied to one data line. During a horizontal flyback period when another scanning line is selected, a selection voltage is applied to the selected scanning line and a voltage allowing the pixel to display black as the least brightness is applied to the data line. As a result, the display of the pixel is erased and the data lines are precharged with the voltage erasing the display, for preparation of the subsequent writing operation.

摘要翻译： 通过使用脉冲型响应执行液晶等的保持型显示来提高运动图像的显示质量。 在有效的水平扫描周期期间，将选择电压施加到所选择的扫描线，并且将对应于与所选择的扫描线的交点的像素的亮度相对应的电压施加到一个数据线。 在选择另一条扫描线的水平回扫期间，对所选择的扫描线施加选择电压，并将允许像素显示黑色的电压作为最小亮度施加到数据线。 结果，擦除像素的显示，并且以擦除显示的电压对数据线进行预充电，以准备随后的写入操作。