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    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same
    1.
    发明授权
    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same 失效
    具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件

    公开(公告)号：US06456639B2

    公开(公告)日：2002-09-24

    申请号：US09864758

    申请日：2001-05-24

    申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    IPC分类号： H01S500

    CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

    摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

    摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same
    2.
    发明授权
    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same 失效
    具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件

    公开(公告)号：US06414975B1

    公开(公告)日：2002-07-02

    申请号：US09048048

    申请日：1998-03-26

    申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    IPC分类号： H01S500

    CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

    摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

    摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

    Semiconductor light emitting device with a Mg superlattice structure
    3.
    发明授权
    Semiconductor light emitting device with a Mg superlattice structure 失效
    具有Mg超晶格结构的半导体发光器件

    公开(公告)号：US5828086A

    公开(公告)日：1998-10-27

    申请号：US826108

    申请日：1997-03-24

    申请人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

    发明人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

    IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/30 ,  H01S5/32 ,  H01S5/347 ,  H01L33/00

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/347 ,  H01S2304/02 ,  H01S5/3059 ,  H01S5/3216

    摘要： A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

    摘要翻译： 半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。 第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。 另一种半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。 第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。 还有一种半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。 缺陷分解层和缺陷阻挡层包括超晶格结构。

    Semiconductor light emitting device with defect decomposing and blocking layers
    4.
    发明授权
    Semiconductor light emitting device with defect decomposing and blocking layers 失效
    具有缺陷分解和阻挡层的半导体发光器件

    公开(公告)号：US5665977A

    公开(公告)日：1997-09-09

    申请号：US691536

    申请日：1996-08-02

    申请人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

    发明人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

    IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/30 ,  H01S5/32 ,  H01S5/347 ,  H01L33/00

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/347 ,  H01S2304/02 ,  H01S5/3059 ,  H01S5/3216

    摘要： A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

    摘要翻译： 半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。 第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。 另一半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。 第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。 另一半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。 缺陷分解层和缺陷阻挡层包括超晶格结构。

    LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    6.
    发明申请
    LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    光曝光掩模及使用其制造半导体器件的方法

    公开(公告)号：US20110170084A1

    公开(公告)日：2011-07-14

    申请号：US13069491

    申请日：2011-03-23

    申请人： Hideto Ohnuma ,  Masaharu Nagai

    发明人： Hideto Ohnuma ,  Masaharu Nagai

    IPC分类号： G03B27/72

    CPC分类号： H01L27/1288 ,  G03F1/50 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621

    摘要： The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).

    摘要翻译： 本发明提供一种能够在均匀厚度的半透射部分中形成光致抗蚀剂层的曝光掩模，以及制造半导体器件的方法，其中制造TFT所需的光刻步骤数（掩模数） 通过使用曝光掩模来减少衬底。 使用曝光掩模，其包括透射部分，遮光部分和具有重复形成线和间隔的光强降低功能的半透射部分，其中遮光层的线宽L之和 材料和半透射部分的遮光材料之间的空间宽度S满足条件表达式（2n / 3）×m＆nlE; L + S＆nlE;（6n / 5）×m，当曝光装置的分辨率由 n，投影倍率由1 / m（m≥1）表示。

    Method for manufacturing SOI substrate
    7.
    发明授权
    Method for manufacturing SOI substrate 有权
    制造SOI衬底的方法

    公开(公告)号：US07829432B2

    公开(公告)日：2010-11-09

    申请号：US12489594

    申请日：2009-06-23

    申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

    发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

    摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

    摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

    Light emitting device and method for manufacturing the same
    8.
    发明授权
    Light emitting device and method for manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US07816863B2

    公开(公告)日：2010-10-19

    申请号：US10933507

    申请日：2004-09-03

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

    IPC分类号： H05B33/22

    CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

    摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

    摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成 以实现具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

    Electronics device, semiconductor device, and method for manufacturing the same
    9.
    发明授权
    Electronics device, semiconductor device, and method for manufacturing the same 有权
    电子器件，半导体器件及其制造方法

    公开(公告)号：US07465593B2

    公开(公告)日：2008-12-16

    申请号：US12007293

    申请日：2008-01-09

    申请人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

    发明人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

    IPC分类号： H01L21/00

    CPC分类号： H01L27/3244 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5246 ,  H01L51/529 ,  H01L2251/5323

    摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

    摘要翻译： 本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。 在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜） 由硅（Si）和氧（O）的组合构成。 在形成之后，形成具有锥形形状的边缘部分或开口部分。 然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。